BD 825 10 Search Results

bd 825 10

Abstract: SIEMENS BD 827-10 D1305 ti 829 IC 8256 bd 827-10 d1310 Q62702-D1305 BD829 D1113
Contextual Info: sie j> ö?3Sbci5 oomflib bbfi m s i E G m SIEMENS AKTIEN6ESELLSCHAF SIEM EN S BD 825 . BD 829 NPN Silicon AF Transistors • • • • High current gain High collector current Low collector-emitter saturation voltage Complementary types: BD 826, BD 828,

828BD

Abstract: BD NPN transistors BD 826 NPN
Contextual Info: SIEMENS/ SPCLi SEMICOND S ûûD » • ö23 b32 Q 00142bQ b « S I P T-'Zfl-Ol Transistors — bipolar A F tran sisto rs P lastic package TO 202 Maximum ratings Type = N PNP = P V ceo BD 825'* BD 826" BD 827" BD 828” BD 829" BD 830" N P N P N P 45 45 60

yx 805 ic

Abstract: yx 801 yx 801 ic yx 805 Q5-250 transistor dk qe G2422 801 yx B0825 8I04
Contextual Info: %9A817*+;868+B/*6 2*C<?8< +D$$D !"#$$%&'( *+#$$+,-.+'/01&2034 5)60783+%99:;<=)+>=9?3*@ %)307860=1@ • <=<>('5*&,:0,02& ■ <=<>7)*,$+(*+?+52.(:@%'0.%$"0&1 ■ =*A$%$&1'-7,$%$#'0A$(52@'0&1 ;*@7<0)60=1 '/*+!"#$$%&6()*+#$$+,-.+6/01&E034+=)60783+899&9<=)+4=9?3*@+

UGT-10

Abstract: cpclare ubd 550 UBD-550 UBD-600 UBD-650 UBD-750 UBD-850 UGT-15 UBD20 UNI-IMPS
Contextual Info: HIGH-SPEED TRANSIENT SURGE PROTECTORS UNI-IMPS DESCRIPTION CP Clare’s UNI-IMP high-speed transient surge protectors 0.55-20kV provide the ultimate protection from highenergy, fast-rising transients such as Nuclear EMP. These devices are constructed using a proprietary

Contextual Info: 6 7 THIS JÊL DRAWING C O P Y R IG H T 15 U N P U B L IS H E D . 19 RELEASED BY AMP IN COR PO RA TE D. ALL FOR PUBLICATION R IG H T S , 4 5 2 3 19 DI ST LOC R ES ER V ED . REVI SI ONS 95 BD DESCRIPTION K R E F O R MA T E D S REV PER 0G40-0257-99 01 JUL AH

k192a

Abstract: c2458 C2498 C2668 C2717 C1923 Y C2499 k710 K241 C2995
Contextual Info: ALPHANUMERICAL INDEX Type No. Marking Page Type No. Marking 1SS154 BA 105 1SV217 T6 175 1SS239 SI 107 1SV224 T7 177 1SS241 TY 109 1SV225 V3 179 1SS242 S2 111 1SV226 TA 181 1SS268 BF 113 1SV227 T9 183 1SS269 BG 115 1SV228 V4 185 1SS271 BD 117 1SV229 T8 188

k915

Contextual Info: Microwave Devices PRODUCT IDENTIFICATION TYPE D*bD*cD*d □*» □*« □ *a: Direction of circulation. Fill in with a letter A or B. A: CW clock-wise B: C.CW (counter clock-wise) □ *b: Bandwidth. Fill in with 1, 2, 3, 5 or 8. 1: Standard bandwidth 2, 3 and 5: Wide bandwidth

MC100E156

Abstract: MC100E156FN MC100E156FNR2 MC10E156 MC10E156FN MC10E156FNR2 0180T
Contextual Info: MC10E156, MC100E156 5VĄECL 3ĆBit 4:1 MuxĆLatch The MC10E/100E156 contains three 4:1 multiplexers followed by transparent latches with differential outputs. When both Latch Enables LEN1, LEN2 are LOW, the latch is transparent, and output date is controlled by the multiplexer select controls (SEL0, SEL1). A logic

CMM6003-SC

Abstract: CMM6003-SC-0G00 CMM6003-SC-0G0T PB-CMM6003-SC-0000 16550 smt
Contextual Info: 50-870 MHz High Dynamic Range Amplifier CMM6003-SC -BD March 2007 - Rev 13-Mar-07 Features Functional Block Diagram 50 to 870 MHz Frequency Range +41 dBm Output IP3 1.6 dB Noise Figure (@ 450 MHz) 17 dB Gain 22 dBm P1dB SOT-89 SMT Package Single Power Supply

MC100E256

Abstract: MC100E256FN MC100E256FNR2 MC10E256 MC10E256FN MC10E256FNR2
Contextual Info: MC10E256, MC100E256 5VĄECL 3ĆBit 4:1 MuxĆLatch The MC10E/100E256 contains three 4:1 multiplexers followed by transparent latches with differential outputs. Separate Select controls are provided for the leading 2:1 mux pairs see logic symbol . When the Latch Enable (LEN) is LOW, the latch is transparent, and

Contextual Info: 8 DRAWING MADE IN THIRD ANGLE PROJECTION THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION COPYRIGHT 19 BY AMP INCORPORATED. ALL 7 6 5 3 4 2 LOC ,19 D IST BD INTERNATIO NAL RIGHTS RESERVED. 1 REVISIONS 95 ZONE LTR D E S C R I P T IO N D A TE RL5E PER NPR 3874 WAS 90-4606-5-3

marking CODE D2B

Abstract: ic 4050 pin diagram
Contextual Info: MC100E256 5V ECL 3-Bit 4:1 Mux-Latch The MC100E256 contains three 4:1 multiplexers followed by transparent latches with differential outputs. Separate Select controls are provided for the leading 2:1 mux pairs see logic symbol . When the Latch Enable (LEN) is LOW, the latch is transparent, and

Contextual Info: MC100E336 5V ECL 3-Bit Registered Bus Transceiver The MC100E336 contains three bus transceivers with both transmit and receive registers. The bus outputs BUS0−BUS2 are specified for driving a 25 Ω bus; the receive outputs (Q0 − Q2) are specified for 50 Ω.

Contextual Info: 155Mbps 1X9 SC Bi-Directional Transceiver Module for ATM, SONET OC-3/SDH STM-1, Fast Ethernet BIDI-155F2L1 Preliminary Data Sheet Feature •Industry Standard 1 x 9 Footprint •C om pliant with existing standards • Single +3.3 V Power Supply •P E C L Differential Inputs and Outputs

bd 5445

Abstract: 384N FJDL63182A-02 INT182 MSM63182A MSM63188A MSM63P180 QFP128-P-1420-0
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

Contextual Info: BD825 BD827 BD829 _ J V. SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose N-P-N transistors, in TO-202 plastic envelopes, recommended fo r driver-stages in hi-fi amplifiers and television circuits. P-N-P complements are BD826, BD828 and BD830. Matched pairs can be supplied.

AN1404

Abstract: AN1405 AND8020 MC100E256 MC100E256FN MC100E256FNR2 D2D marking code
Contextual Info: MC100E256 5VĄECL 3ĆBit 4:1 MuxĆLatch The MC100E256 contains three 4:1 multiplexers followed by transparent latches with differential outputs. Separate Select controls are provided for the leading 2:1 mux pairs see logic symbol . When the Latch Enable (LEN) is LOW, the latch is transparent, and

Varistor V471U

Abstract: v201u 270 nr 14d znr V14 4D560 V271U v471u 14D621 V221U PANASONIC VARISTORS ZNR
Contextual Info: ÒZNRâÓ Transient/Surge Absorbers Type D ÒZNRâÓ Transient/Surge Absorbers Series: Type: V D ÒZNRâÓ Transient/Surge Absorber, Series V, Type D features large surge current and energy handling capability for absorbing transient overvoltage in a compact size.

AN1404

Abstract: AN1405 AND8020 MC100E336 MC100E336FN MC100E336FNR2
Contextual Info: MC100E336 5VĄECL 3ĆBit Registered Bus Transceiver The MC100E336 contains three bus transceivers with both transmit and receive registers. The bus outputs BUS0–BUS2 are specified for driving a 25 Ω bus; the receive outputs (Q0 – Q2) are specified for 50 Ω.

384N

Abstract: INT182 MSM63182 MSM63188 MSM63P180 QFP128-P-1420-0
Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.

uba2036

Abstract: lighting UBA2036TS High Voltage Driver IC for HID Lamps Application of electronics circuits to lighting SOT134 hid lamp controller MO-150 Q100 SSOP28
Contextual Info: UBA2036TS Full bridge control IC for HID automotive lighting Rev. 01 — 30 October 2008 Product data sheet 1. General description The UBA2036 is a high voltage monolithic Integrated Circuit IC manufactured in a High Voltage Silicon On Insulator (HVSOI) process. This circuit is designed for driving

Contextual Info: S G S - T H Ç O M S O N IlO T M D Ê i ï. SD1680 RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS > . . . . . . . . . 915 - 960 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY

F95124

Contextual Info: F95124 17 QUAD TTL TO ECL TRANSLATOR D E S C R IP T IO N — The F 95124 is a Quad Translator for converting TTL logic levels to 95K ECL logic levels. The inputs are compatible w ith standard or with Schottky TTL. A Common Enable input Eq , w hen LOW, holds all inverting outputs HIGH and holds

uba2037

Abstract: lighting High Voltage Driver IC for HID Lamps UBA2037TS hid lamp controller hid lighting UBA2037T 075E05 MO-150 MS-013
Contextual Info: UBA2037 Full bridge control IC for HID general lighting Rev. 01 — 30 October 2008 Product data sheet 1. General description The UBA2037 is a high voltage monolithic Integrated Circuit IC manufactured in a High Voltage Silicon On Insulator (HVSOI) process. This circuit is designed for driving