BD 825 10 Search Results

bd 825 10

Abstract: SIEMENS BD 827-10 D1305 ti 829 IC 8256 bd 827-10 d1310 Q62702-D1305 BD829 D1113
Contextual Info: sie j> ö?3Sbci5 oomflib bbfi m s i E G m SIEMENS AKTIEN6ESELLSCHAF SIEM EN S BD 825 . BD 829 NPN Silicon AF Transistors • • • • High current gain High collector current Low collector-emitter saturation voltage Complementary types: BD 826, BD 828,

828BD

Abstract: BD NPN transistors BD 826 NPN
Contextual Info: SIEMENS/ SPCLi SEMICOND S ûûD » • ö23 b32 Q 00142bQ b « S I P T-'Zfl-Ol Transistors — bipolar A F tran sisto rs P lastic package TO 202 Maximum ratings Type = N PNP = P V ceo BD 825'* BD 826" BD 827" BD 828” BD 829" BD 830" N P N P N P 45 45 60

transistors BC 543

Abstract: BD 104 NPN BC827 BD 104 transistors d 826 bc 734 82s83 BC 828 BD 541 bc825
Contextual Info: SIE P SIEMENS • ÖZBSbGS 0041021 TS5 « S I E G SIEMENS AKTIENGESELLSCHAF - F s s - n PNP Silicon AF Transistors • • • • BD 826 . BD 830 High current gain High collector current Low collector-emitter saturation voltage Complementary types: BC 825, BC 827,

JE350

Abstract: je180 MJ13004 TP33C BD325 JE172 BDX48 JE340 bd160 BUT55
Contextual Info: INDUSTRY STANDARD SGS-THOMSON BD135 BD136 BD137 BD138 BD139 BD135 BD136 BD137 BD138 BD139 BD140 BD142 BD144 BD157 BD158 BD140 BD159 BD160 BD165 BD166 BD167 BD159 SGS-THOMSON PAGE NEAREST BD157 BD158 2N5878 BD437 BD438 BD439 BD440 BD441 BD442 BD237 BD238 BD168

yx 805 ic

Abstract: yx 801 yx 801 ic yx 805 Q5-250 transistor dk qe G2422 801 yx B0825 8I04
Contextual Info: %9A817*+;868+B/*6 2*C<?8< +D$$D !"#$$%&'( *+#$$+,-.+'/01&2034 5)60783+%99:;<=)+>=9?3*@ %)307860=1@ • <=<>('5*&,:0,02& ■ <=<>7)*,$+(*+?+52.(:@%'0.%$"0&1 ■ =*A$%$&1'-7,$%$#'0A$(52@'0&1 ;*@7<0)60=1 '/*+!"#$$%&6()*+#$$+,-.+6/01&E034+=)60783+899&9<=)+4=9?3*@+

UGT-10

Abstract: cpclare ubd 550 UBD-550 UBD-600 UBD-650 UBD-750 UBD-850 UGT-15 UBD20 UNI-IMPS
Contextual Info: HIGH-SPEED TRANSIENT SURGE PROTECTORS UNI-IMPS DESCRIPTION CP Clare’s UNI-IMP high-speed transient surge protectors 0.55-20kV provide the ultimate protection from highenergy, fast-rising transients such as Nuclear EMP. These devices are constructed using a proprietary

N565

Abstract: C741 017A2 E5819
Contextual Info: @?85,A *;5:5*B.): 0)C6=56'*+$$+ !"#$$%&' )*+$*,-*&./,%0/1-2*34567)*!58)1),9:.%;/8/7/4, <=1:/(1)>)67*5,?*;)-=1:/(1)>)67 @(1/A5:/4,7 • ;<=>('5*&,:0,02& ■ ;<=>7)*,$+(*+?+52.(:@%'0.%$"0&1 ■ <*A$%$&1'-7,$%$#'0A$(52@'0&1 ;)7A6/(:/4, &.)*!"#$$%:'()*+$*,-*:./,%D/1-*D/1:)62*A4567)*E58)1),9:.%

Contextual Info: 6 7 THIS JÊL DRAWING C O P Y R IG H T 15 U N P U B L IS H E D . 19 RELEASED BY AMP IN COR PO RA TE D. ALL FOR PUBLICATION R IG H T S , 4 5 2 3 19 DI ST LOC R ES ER V ED . REVI SI ONS 95 BD DESCRIPTION K R E F O R MA T E D S REV PER 0G40-0257-99 01 JUL AH

S53A

Contextual Info: =;>:0? *<:6:*@.)6 1)A85:8'*B$$B !"#$$%&' )*#$$*+,-*&./0%1/23 4526/(2)7)89*:0;*<)3526/(2)7)89 =(2/?:6/J09 • <=<>('5*&,:0,02& ■ <=<>7)*,$+(*+?+52.(:@%'0.%$"0&1 ■ =*A$%$&1'-7,$%$#'0A$(52@'0&1 <)9?8/(6/J0 &.)*!"#$$%6'()*#$$*+,-*6./0%C/23*3526/(2)7)89*D4EF9G*:0;*;)%

D1455

Abstract: k649 Z1506 NDK8 4948 ZN 424 ED42 45p6 Z9950
Contextual Info: @9 6/8/549'*?424*A1)2 7)B9;49'*C$$C !"#$$%&' )*#$*+,-*./012%31455)6*&1/5%7/68*7/62)9 :;62/(6)<)9=*45>*?)8;62/(6)<)9= O(6/D42/K5= • <=<>('5*&,:0,02& ■ <=<>7)*,$+(*+?+52.(:@%'0.%$"0&1 ■ =*A$%$&1'-7,$%$#'0A$(52@'0&1 ?)=D9/(2/K5 (

A5 vNB

Abstract: S53A
Contextual Info: =;>:0? *<:6:*@.)6 1)A85:8'*#$$# !"#$$%&' )*#$$*+,-*&./0%1/23 4526/(2)7)89*:0;*<)3526/(2)7)89 =(2/?:6/I09 • <=<>('5*&,:0,02& ■ <=<>7)*,$+(*+?+52.(:@%'0.%$"0&1 ■ =*A$%$&1'-7,$%$#'0A$(52@'0&1 <)9?8/(6/I0 &.)*!"#$$%6'()*#$$*+,-*6./0%B/23*3526/(2)7)89*C4DEF*:0;*;)%

PK1001

Contextual Info: Global PartnerChip for System s on Silicon Siem ens A G Österreich Erdberger Lände 26 1030 Wien S t +43 -1-1707-35611 Fax (+43)1-1707-55973 Email: elisabeth.schwarz@siemens.at (AUS) Siem ens Ltd., Head Office 544 Church Street Richmond (Melbourne), Vic. 3121

B17C

Abstract: 4202 bd datasheet BD 139 N A13B A5l102 A18E 48-7191 A17A 48-2210 AND501
Contextual Info: PIN NUMBER 2161-1 102 PIN LENGTH 19.0/.750 PLATING 102 MATING “M” 11.43/.450 PCB “P” 4.37/.172 GOLD “G” N/A TIN “T” OVERALL PACKAGING PK-41661-001 STATUS A-41661-ANA102-* MATERIAL ENGINEERING VOIDS 26-48-1021 26-48-1031 26-48-1041 26-48-1051

k192a

Abstract: c2458 C2498 C2668 C2717 C1923 Y C2499 k710 K241 C2995
Contextual Info: ALPHANUMERICAL INDEX Type No. Marking Page Type No. Marking 1SS154 BA 105 1SV217 T6 175 1SS239 SI 107 1SV224 T7 177 1SS241 TY 109 1SV225 V3 179 1SS242 S2 111 1SV226 TA 181 1SS268 BF 113 1SV227 T9 183 1SS269 BG 115 1SV228 V4 185 1SS271 BD 117 1SV229 T8 188

k915

Contextual Info: Microwave Devices PRODUCT IDENTIFICATION TYPE D*bD*cD*d □*» □*« □ *a: Direction of circulation. Fill in with a letter A or B. A: CW clock-wise B: C.CW (counter clock-wise) □ *b: Bandwidth. Fill in with 1, 2, 3, 5 or 8. 1: Standard bandwidth 2, 3 and 5: Wide bandwidth

MC100E156

Abstract: MC100E156FN MC100E156FNR2 MC10E156 MC10E156FN MC10E156FNR2 0180T
Contextual Info: MC10E156, MC100E156 5VĄECL 3ĆBit 4:1 MuxĆLatch The MC10E/100E156 contains three 4:1 multiplexers followed by transparent latches with differential outputs. When both Latch Enables LEN1, LEN2 are LOW, the latch is transparent, and output date is controlled by the multiplexer select controls (SEL0, SEL1). A logic

Contextual Info: Global PartnerChip for Systems on Silicon CD Siem ens A G Österreich Erdberger Lände 26 1030 Wien 8 <+43 1-1707-35611 Fax +43)-1-1707-55973 (AU S) Siem ens Ltd., Head Office 544- Church Street Richmond (Melbourne), Vic. 3121 8 (03)4207111 (SI 30425 Fax (03)4207275

Contextual Info: RÊ25C I 8 2 0 □HM8 + / - 1 0 '/. P E G I G T ANCE MUUTIPUIEF: P T C : . 7 7. / G □ P E P A T I NG P A N E E ¡ - 55 TE 185 G 8 T E P A E E PANEE :- 6 5 TE 150 E THERMAE T I M E 8 8 N8 TANT : t , 0 5:88, MAX H I 8 8 1 F’A T I E N E E N E T A N T : 2 , 5 n W/ E MI N

CMM6003-SC

Abstract: CMM6003-SC-0G00 CMM6003-SC-0G0T PB-CMM6003-SC-0000 16550 smt
Contextual Info: 50-870 MHz High Dynamic Range Amplifier CMM6003-SC -BD March 2007 - Rev 13-Mar-07 Features Functional Block Diagram 50 to 870 MHz Frequency Range +41 dBm Output IP3 1.6 dB Noise Figure (@ 450 MHz) 17 dB Gain 22 dBm P1dB SOT-89 SMT Package Single Power Supply

100E156

Abstract: MC100E156 MC100E156FN MC100E156FNR2 MC10E156 MC10E156FN MC10E156FNR2 PLCC 22 GMT 3-4
Contextual Info: MC10E156, MC100E156 5VĄECL 3ĆBit 4:1 MuxĆLatch The MC10E/100E156 contains three 4:1 multiplexers followed by transparent latches with differential outputs. When both Latch Enables LEN1, LEN2 are LOW, the latch is transparent, and output date is controlled by the multiplexer select controls (SEL0, SEL1). A logic

Contextual Info: MC10E256, MC100E256 5VĄECL 3ĆBit 4:1 MuxĆLatch The MC10E/100E256 contains three 4:1 multiplexers followed by transparent latches with differential outputs. Separate Select controls are provided for the leading 2:1 mux pairs see logic symbol . When the Latch Enable (LEN) is LOW, the latch is transparent, and

Contextual Info: R R 3 5 3 : 33 ÜÛ □HM3 + / - 3 X PTC : . 7 '/. / C □ P E P A T I NG P A N G E i - 5 5 TG 125 C CTGPAGG F:ANGE ! - 65 TG 150 G THERMAL T I M E CDN3:TANT : t , 0 3 E 3 MAX H I G5 1 F A T I GN CGN GT A N T : 2 , 5 n W/ C MI N FEWER P A T I NE 5WC25C , DERATE TG 135

MC100E256

Abstract: MC100E256FN MC100E256FNR2 MC10E256 MC10E256FN MC10E256FNR2
Contextual Info: MC10E256, MC100E256 5VĄECL 3ĆBit 4:1 MuxĆLatch The MC10E/100E256 contains three 4:1 multiplexers followed by transparent latches with differential outputs. Separate Select controls are provided for the leading 2:1 mux pairs see logic symbol . When the Latch Enable (LEN) is LOW, the latch is transparent, and

Contextual Info: 8 DRAWING MADE IN THIRD ANGLE PROJECTION THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION COPYRIGHT 19 BY AMP INCORPORATED. ALL 7 6 5 3 4 2 LOC ,19 D IST BD INTERNATIO NAL RIGHTS RESERVED. 1 REVISIONS 95 ZONE LTR D E S C R I P T IO N D A TE RL5E PER NPR 3874 WAS 90-4606-5-3