BD 104 Search Results

BO 649

Abstract: BD 104 darlington bd 645 TOP-66 b 647 c BD 649 bd647 BD64S Q62702-D376 BD 104 NPN
Contextual Info: - 25C D • 0235bQS 00043Ô7 7 « S I E Û _ NPN Silicon Darlington Transistors T-33-29 SIEMENS AKTIEN GESELLSCHAF ; ° ^ 387 BD 643 BD 645 BD 647 BD 649 ° Epibase power darlington transistors 62.5W BD 643, BD 645, BD 647, and BD 649 are monolithic NPN silicon epibase power darlington

BD 676

Abstract: BD33KA5WFP BD00KA5WF BD00KA5WFP BD15KA5WFP
Contextual Info: Secondary LDO Regulator Series for Local Power Supplies 500mA Secondary LDO Regulators for Local Power Supplies BD□□KA5,BD□□KA5W Series,BD00KA5W Series No.09024EAT01 ●General Description The BD□□KA5 series are low-saturation regulators that are available for output currents up to 500mA. The output voltage

Contextual Info: Film Capacitors – Power Factor Correction Current limitation reactor Series/Type: Ordering code: BD-050/BD-100/BD-200 B44066T….E400/E480 Date: Version: December 2010 1 Content of header bars 1 and 2 of data sheet will be automatically entered in headers and footers! Please fill in the

2sc 103 transistor

Abstract: transistor BD 430
Contextual Info: SSC » • Ô23SL.GS 0G0M3SS 5 « S I E G ^f’ 33^D>S NPN Silicon Planar Transistor BD 429 SIEMENS AKTIENGESELLSCHAF ¡C 04355 0 - BD 429 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. Together with its complementary transistor BD 430 it is particularly suitable for use in

Contextual Info: BD Series High Temperature^ for +125°C FEATURES 1. Wide operating temperature range, it as long load life product at 125°C. 2. Suit for use in DC or pulse circuits in various electronic and industrial SPECIFICATIONS BD Item Performance Characteristics Operating Temperature Range

Contextual Info: GP SERIES GENERAL PURPOSE METAL FILM RESISTORS rrm\ Standard EIA C olor Code BD LD Î t LL " BL DIMENSION mm inch *1 LL GENERAL SPECIFICATIONS Lead Wire Resistance Range BL BD LL LD Style Power Rating (70°C) Max. Working Voltage Max. Over Load Voltage T.C.R.

A69106

Abstract: A691901 A691905 condensateur A691913 Felsic 85 M A691907 BC 104 capacitor felsic capacitor felsic 85
Contextual Info: Fixation par vis en fond de tube : FELSIC BD L'écrou acier, la rondelle éventail et la rondelle isolante sont livrés avec le condensateur, non montés. Montage standard: Fixation avec écrou acier et rondelle isolante Stud fixing: FELSIC BD Steel nut, spring washer and insulating washer are delivered

a69108

Abstract: A691061 felsic 85 a691080 A691905 A69106 A691901 condensateur A691062 a691081
Contextual Info: Fixation par vis en fond de tube : FELSIC BD L'écrou acier, la rondelle éventail et la rondelle isolante sont livrés avec le condensateur, non montés. Montage standard: Fixation avec écrou acier et rondelle isolante Stud fixing: FELSIC BD Steel nut, spring washer and insulating washer are delivered

Contextual Info: N AflER P H IL IP S / D IS C R E T E - ^ 5 3 ^ 3 1 2SE D O D l^ S A 1 • BD 241; BD 241A B D 241B ; BD 241C T - 23-// S IL IC O N E P IT A X IA L B A S E P O W E R T R A N S IS T O R S N-P-N silicon transistors in a plastic envelope intended fo r use in audio output stages, general amplifier

NT5TU32M16DG

Abstract: Nanya NT5TU32M16DG NT5T NT5TU32M16CG-25C NT5TU32M16CG-3CI NT5TU32M16CG NT5TU32M16CG-25DI nt5tu64m8 B.a Date sheet 2007 DDR2-667
Contextual Info: NT5TU128M4CE / NT5TU64M8CE / NT5TU32M16DG 512Mb DDR2 SDRAM Feature CAS Latency Frequency -37B/-37BI -3C/-3CI -25D/-25DI -25C/-25CI -BD -BD DDR2-533 DDR2-667 DDR2-800 DDR2-800 DDR2-1066 DDR2-1066 4-4-4 5-5-5 6-6-6 5-5-5 7-7-7 6-6-6 tCK Avg. 266 333 400 400

transistor BD

Abstract: TRANSISTOR bd 330
Contextual Info: 2SC D • fl23SbDS QQQHBMI T M S I E G PNP Silicon Planar Transistor BD 330 _ 25C0 4 3 4 9 D T - 3 1 '/ ? SIEMENS AKTIENGESELLSCHAF BO 330 is an epitaxial PNP silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . Together with its complementary transistor BD 329 it is particularly

Contextual Info: ^3natron P R O -E L E C T R O N P O W E R T R A N S IS T O R S DEVICE POLARITY IC cont. vCEO MAX AMPS MAX VOLTS TYPE BD 130 NPN 15.0 60 BD 142 NPN 15.0 45 BDY 20 NPN 1S.0 60 BDY 29 NPN 30.0 75 BDY 37 NPN 140 16.0 BDY 38 NPN 6.0 40 BDY 39 NPN 15.0 60 BDY 55 NPN

Contextual Info: 5-channel 3-LD Driver for Optical Disk Drive CXA2765ER Description The CXA2765ER is a laser driver IC that can drive optical disk lasers capable of writing the three formats of CD, DVD and BD. Applications: Writable 3-wavelength optical disk drive Features

High-Frequency Modulation Laser cd dvd

Abstract: Laser Diode for dvd Recording CXA2765ER CXA2765
Contextual Info: 5-channel 3-LD Driver for Optical Disk Drive CXA2765ER Description The CXA2765ER is a laser driver IC that can drive optical disk lasers capable of writing the three formats of CD, DVD and BD. Applications: Writable 3-wavelength optical disk drive Features

TEXAS 7697

Abstract: CMM1100 CMM1100-BD DM6030HK PB-CMM1100-BD-0000 TS3332LD
Contextual Info: 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier CMM1100-BD February 2010 - Rev-05-Feb-10 Features Self Bias Architecture 17.0 dB Small Signal Gain 3.5 dB Noise Figure +16.0 dBm P1dB Compression Point 100% Commercial-Level Visual Inspection Using Mil-Std-883 Method 2010

152625

Contextual Info: 17.0-21.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1009-BD May 2007 - Rev 02-May-07 Features Excellent Linear Output Amplifier Stage 20.0 dB Small Signal Gain +29.5 dBm P1dB Compression Point +38.0 dBm Third Order Intercept OIP3

Contextual Info: 21.0-24.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1010-BD February 2007 - Rev 23-Feb-07 Features Excellent Linear Output Amplifier Stage 19.0 dB Small Signal Gain +30.0 dBm P1dB Compression Point +39.0 dBm Third Order Intercept OIP3

Contextual Info: 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier CMM1100-BD September 2009 - Rev 22-Sep-09 Features Self Bias Architecture 17.0 dB Small Signal Gain 3.5 dB Noise Figure +16.0 dBm P1dB Compression Point 100% Commercial-Level Visual Inspection Using Mil-Std-883 Method 2010

XP1072-BD

Abstract: XP1072-BD-000V ID232 DM6030HK 152.01 VD55
Contextual Info: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1072-BD February 2010 - Rev 16-Feb-10 Features Ka-Band 4W Power Amplifier 22.0 Small Signal Gain +35.0 dBm Pulsed Saturated Output Power 25% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing

Contextual Info: AMP INCORPORATED Harrisburg, Pa. 17105 REV REASON A 1. C U S T O M E R H O T L IN E 1 800 722-1111 APPLICATION I in 01c SPECIFICATION I 114- ' 0015 AMP* “M” SERIES 104-POSITION RFI/EMISHIELDED CONNECTORS ECN BD-2460 ENGINEERING R ELEASE D A TE 3 -2 8 -8 9

Contextual Info: Note: All part numbers are RoHS Compliant. BUCHANAN Terminal Blocks 0.375” [9.53] Pitch, Series JC6 JC6-P107-03 Ordering Information JC6 - P 1 07 - 06 A Material & Finish D E B Terminal Style C = Non Feed Thru E = Extended Circ. Bd. F = Quick Connect, .187

CGB7011-BD

Abstract: CGB7011-BD-000V DM6030HK TS3332LD 16720
Contextual Info: DC-6.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier April 2007 - Rev 04-Apr-07 CGB7011-BD Features Features 36.0 dBm Output IP3 @ 850 MHz 3.4 dB Noise Figure @ 850 MHz 21.7 dB Gain @ 850 MHz 21.0 dBm P1dB @ 850 MHz Low Performance Variation Over Temperature

bd 7122

Contextual Info: CGB7005-SC -BD 0.1 GHz to 6.0 GHz InGaP HBT, MMIC or Packaged, Matched Gain Block Amplifier Advanced Product Information November 2003 V1.0 (1 of 7) Features ❏ Low Operating Voltage: 5V ❏ 32.5 dBm Output IP3 @ 850 MHz ❏ 3.0 dB Noise Figure @ 850 MHz

ka-band transistor

Abstract: P1026-BD 30SPA0553 DM6030HK TS3332LD XP1026-BD XP1026-BD-000V XP1026-BD-EV1 ka-band bare
Contextual Info: 27.0-32.0 GHz GaAs MMIC Power Amplifier P1026-BD February 2006 - Rev 23-Feb-07 Features Ka-Band 2W Power Amplifier 22.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing