BCX2 Search Results

Contextual Info: BCX19 BCX20 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors M arkin g BCX19 = U l BCX20 = U2 P A C K A G E O U T L IN E D E T A IL S A L L D IM E N S IO N S IN m m _3.0_ 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6

6302

Contextual Info: SURFACE MOUNT CATALOGUE SOT 23 CERAMIC LCC NPN GENERAL PURPOSE NPN RATINGS DEVICE BCW60D BCW71 BCW72 BCW81 BCX19 BCX20 BCX56 BCX70G BCX70H BCX70J BCX70K NEBTA06 NEBT2222 NEBT2222A NEBT3903 NEBT3904 hFE VCE SAT fT VCEO IC min/max@IC/VCEO max V@IC/IB typ 32

bcx22

Contextual Info: N AflER PHILIPS/DISCRETE b^E L ^ 5 3 1 3 1 DQE7b0fl T3T H A P X Philips Semiconductors D a ta s h e e t s ta tu s P r e lim in a r y s p e c ific a tio n d a te o f is s u e June 1990 BCX22 Silicon planar epitaxial transistor QUICK REFERENCE DATA SYMBOL PARAMETER

BCX23

Contextual Info: SbE D PHILIPS INTERNATIONAL • 711D62b 004507b 03=1 ■ P H I N _ T —2 7 - 2 P h ilip s S em ico n d u c to rs BCX23 Data sheet status Preliminary specification date of issue June 1990 Silicon planar epitaxial transistor QUICK REFERENCE DATA -VCEO C O N D ITIO N S

bcx40

Contextual Info: Medium Power Amplifiers and Switches TYPE POLA­ CASE NO. RITY BCW97 BCX25 BCX26 BCX40 BCX45 BCX46 BCX47 BCX48 BCX49 BCX50 BCX60 BCX73 BCX74 BCX75 BCX76 BFR10 BFR11 BFR18 BFR19 BFR20 BFR21 BFR22 BFR23 BFR24 BFR41 BFR77 BFR79 BFS92 BFS93 BFS94 BFS95 BFT29 BFT30

2SA114

Abstract: 2SA912 2SA554 MALLORY 150 BSW23 2sb807 2sa1285af LOW-POWER SILICON PNP 2sb788 2SA119
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 PTC103 A5T3498 2N3494 2N3498 MMBT8599 HSE175 BCX28 BC558B BCX35 PTC127 ~~~1b71 15 20 2SA1285E 2SA1285F 2SA1285G 2SB788 SOR5400 (A) 2SA1145 2SA912 2SA11450 ~~~~~~~XE 25 2SA1123 2SB792 2SB807 2SA1285AF

Contextual Info: I I I N AUER PHILIPS/DISCRETE t.'lE D bbSa^l DD27bl]i 5 2 3 H A P X P h ilip s S em ico n d u c to rs BCX23 D a ta sh eet statu s P re lim in a ry s p e c ific a tio n d a te o f issue J u n e 1 990 Silicon planar epitaxial transistor QUICK REFERENCE DATA

Contextual Info: ^£.mi- 2onductoi , Una. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BCX23 BCX39 BCX 23 and BOX 39 are epitaxial PNP silicon planar transistors in TO 18 metal case (18 A 3 DIN 41876). The collector is electrically connected to the case. These transistors

Contextual Info: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 - FEBRUARY 1996 PARTMARKING DETAILS - B C X Ì7 - T1 BCX18 -T 2 BCX17R - T4 BCX18R - T5 CO M PLEM ENTARY TYPES - BCX17 cÆ P e BCX19 B C X 1 8 - BCX20 SOT23 ABSOLUTE M AXIM UM RATINGS. PARAMETER BCX17

BCX19

Abstract: BCX17 BCX18 BCX20
Contextual Info: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 - FEBRUARY 1996 PARTMARKING DETAILS - - U1 U2 BCX20R- U4 U5 BCX19 BCX20 BCX19 - BCX17 BCX20 - BCX18 ABSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage

BCX20LT1

Contextual Info: BCX20LT1 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTORS ABSOLUTE MAXIMUM RATINGS at Ta=25 Unit Vcbo 30 V Collector-Emitter Voltage Vceo 25 V Emitter-Base Voltage 1. Vebo 5.0 V Collector Current Ic 500 mA Total Device Dissipation PD 225 mw 1.8

Contextual Info: BCX20 NPN Epitaxial Silicon Transistor BCX20 NPN Epitaxial Silicon Transistor Switching and Amplifier Applications 3 2 1 SOT-23 Marking: U2 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units

BCX17L

Abstract: BCX18L BCX19L BCX20L
Contextual Info: M O T O R O L A SC M A X I M U M R A T IN G S Value Rating Sym bol BCX17L BCX19L BCX18L BCX20L Unit Collector-Emitter Voltage VCEO 45 25 Vdc Collector-Base Voltage VCBO 50 30 Vdc Emitter-Base Voltage Ve b O 5.0 Vdc ic 500 mAdc Collector Current — Continuous

BCX17

Abstract: BCX17LT1 BCX18 BCX18LT1 BCX19LT1 BCX20LT1
Contextual Info: MOTOROLA Order this document by BCX17LT1/D SEMICONDUCTOR TECHNICAL DATA COLLECTOR 3 General Purpose Transistors 1 BASE 2 EMITTER COLLECTOR 3 1 BASE PNP BCX17LT1 BCX18LT1 NPN BCX19LT1 BCX20LT1 Voltage and current are negative for PNP transistors 2 EMITTER 3

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCX19 BCX20 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BCX19 = U1 BCX20 = U2 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

BCX19

Abstract: lem HA BCX20
Contextual Info: BCX19 BCX20 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors M arkin g BCX19 = U l BCX20 = U2 P A C K A G E O U T L IN E D E T A IL S A L L D IM E N S IO N S IN m m _3.0_ 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6

Contextual Info: IL BCX19 BCX20 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors M arking BCX19 = U1 BCX20 = U2 PACKAGE O UTLIN E DETAILS ALL DIM EN SION S IN mm 0.14 0.09 _L 0.70 0.50 1 1.4 1.2 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR R0.1 .004 ' I fV R0.05

BCX19

Abstract: BCX20
Contextual Info: L BCX19 BCX20 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors M arking BCX19 = U1 BCX20 = U2 PA C K A G E O U TLIN E D ETA ILS A LL D IM EN SIO N S IN m m _3.0_ 2.8 0.1 4 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _L02_

BD320C

Abstract: BCX21 BD323 TlPl22 2N6383 BD320 BD321 BD322 BDX33 BDX33A
Contextual Info: DARLINGTONS POWER DARLINGTON SELECTOR CHART T0-220 10A BDX TO-39 2A TO-39 A Package •c o w ÜÔ >> NPN TO-3 10A PNP 40 - - - - 2N6383 45 BCX21 - BDX33 BDX34 - 60 BD320 BD321 BDX33A BDX34A BD322 BD323 TIP120 TIP125 - BDX33B BDX34B TIP121 TIP126 BDX33C BDX34C

Contextual Info: General Purpose Transistors 3 COLLECTOR 1 BASE PNP BCX17LT1 BCX18LT1 NPN BCX19LT1 BCX20LT1 3 COLLECTOR 1 BASE 2 EMITTER 2 EMITTER Voltage and current are negative for PNP transistors 3 MAXIMUM RATINGS 1 Value Rating Symbol BCX17LT1 BCX19LT1 BCX18LT1 BCX20LT1

BCX17

Abstract: BCX18R marking of m7 diodes sot 23 marking code T2 sot marking t5 T4 MARKING CODE I8 SOT23 Diode marking m7 t4 u4 BCX17R
Contextual Info: FERRANTI semiconductors BCX17 BCX18 PNP Si licon Planar M e d i u m P o w e r Transistors DESCRIPTION These devices are intended for saturated sw itching, general purpose sw itch in g and driver applications. Com plem entary to the BCX19 and BCX20. Encapsulated in the popular SO T-23 package these devices

pnp darlington to-220 10a

Abstract: shockley diode TIP121 transistor BDX33d BD321 BD322 2N6383 BCX21 tip121 BD323
Contextual Info: DARLINGTONS POW ER DARLINGTO N SELEC TO R CH A R T T0-220 10A BDX TO-39 2A TO-39 A Package •c ow ÜÔ >> NPN TO-3 10A PNP 40 - - - - 2N6383 45 BCX21 - BDX33 BDX34 - 60 BD320 BD322 BD321 BD323 BDX33A TIP120 BDX34A TIP125 2N6384 - BDX33B TIP121 BDX34B TIP126

MV SOT23

Abstract: BCX18 BCX17 BCX18R t4 sot23 diode BCX17R BCX19 BCX20 DSA003674
Contextual Info: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS BCX17 BCX18 ISSUE 3 – FEBRUARY 1996 PARTMARKING DETAILS – BCX17 BCX18 BCX17R BCX18R – T1 – T2 – T4 – T5 E C B COMPLEMENTARY TYPES - BCX17 - BCX19 BCX18 - BCX20 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER

BS25

Abstract: BCX22 IEC134 Silicon Epitaxial Planar Transistor philips
Contextual Info: PHILIPS INTER N A T I O N A L SbE m D 711002b 14^3 0042072 I PH IN Philips Sem iconductors BCX22 D a ta sheet status Preliminary specification d a te o f issue June 1990 Silicon planar epitaxial transistor Q U IC K R E F E R E N C E D A TA SYM BOL PARAM ETER