BCX21 Search Results

BD320C

Abstract: BCX21 BD323 TlPl22 2N6383 BD320 BD321 BD322 BDX33 BDX33A
Contextual Info: DARLINGTONS POWER DARLINGTON SELECTOR CHART T0-220 10A BDX TO-39 2A TO-39 A Package •c o w ÜÔ >> NPN TO-3 10A PNP 40 - - - - 2N6383 45 BCX21 - BDX33 BDX34 - 60 BD320 BD321 BDX33A BDX34A BD322 BD323 TIP120 TIP125 - BDX33B BDX34B TIP121 TIP126 BDX33C BDX34C

pnp darlington to-220 10a

Abstract: shockley diode TIP121 transistor BDX33d BD321 BD322 2N6383 BCX21 tip121 BD323
Contextual Info: DARLINGTONS POW ER DARLINGTO N SELEC TO R CH A R T T0-220 10A BDX TO-39 2A TO-39 A Package •c ow ÜÔ >> NPN TO-3 10A PNP 40 - - - - 2N6383 45 BCX21 - BDX33 BDX34 - 60 BD320 BD322 BD321 BD323 BDX33A TIP120 BDX34A TIP125 2N6384 - BDX33B TIP121 BDX34B TIP126

BD320C

Abstract: 2N3725 tip122 tip127 BD321A TlPl22 2N3261 2N3512 2N3724 BD320A BD320B
Contextual Info: CORE DRIVERS TABLE 9 - N P N SILICON PLANAR HIGH SPEED CORE DRIVER TRANSISTORS The devices shown in this table are designed fo r use in fast, medium and high voltage, high current core driving applications where the high speed at high current capability is o f prime importance.

ICS9112BM-17

Abstract: asus bc458 BC148 pin configuration bc482 BC451 foxconn SC15P nds0610 bc305
Contextual Info: Falcon2.2 CLK GEN. CY2285-2 Mobile PIII PAGE:3 PCB LAYER 00205-1 L1:COMPONENT Project code :91.44G01.001 PCB P/N = 48.41J01.001 REVISION : 1 L2:GND L3:SIGNAL CLK L4:VCC Celeron SDRAM CLK BUFFER L5:SIGNAL(CLK) verson : A2 or A3 ICS-9112-17 DIMM*2 L8:COMPONENT

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

OT239

Abstract: BT100a 02 CQX82A TRIO TA 80W CV7351 ZP1481 CV2154 ZP1430 triac mw 151 500r PL5727
Contextual Info: Milliard quick reference guide 1978/79 — discrete semiconductors — passive components — valves and tubes This guide gives quick reference data on Mullard electronic components. The information is deliberately abbreviated to give a rapid appreciation of salient characteristics, and to

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

M1535 a1

Abstract: M1535 BC483 Asus BC356 BC458 M1621 2M1711 TSAHCT125 2M171
Contextual Info: Falcon 2.5 CLK GEN. ICS9248-61 99212_SB L1:COMPONENT Project code : 91.41H01.001 PCB P/N = 48.41H01.0SB REVISION : VB2 Mobile PIII PAGE:3 PCB LAYER L2:GND L3:SIGNAL CLK L4:VCC Coppermine SDRAM CLK BUFFER L5:SIGNAL(CLK) verson : A2 or A3 ICS-9112-17 HOST BUS

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

BD321

Abstract: BD320C BD320 BD323B transistor bd320c pnp darlington to-220 10a BD320B bcx21 TRANSISTOR tip122 2N3512
Contextual Info: CORE DRIVERS TA B LE 9 -N P N SILICO N PLAN AR HIGH SP EED CORE DRIVER TR A N SISTO R S The devices shown in this table are designed for use in fast, medium and high voltage, high current core driving applications where the high speed at high current capability is of prime importance.

BD320C

Abstract: BD323B BD323A 2N6385 BDX33 BDX33A BDX33B BDX33C BDX33D BDX34A
Contextual Info: DARLINGTONS TA B LE 5 - NPN and PN P SILICO N HIGH C U R R E N T D A RLIN G TO N T R A N S IS T O R S The devices shown in this table are designed for applications requiring very high current gain. The monolithic construction has the inherent advantages of fast switching times, low

sf hd62

Abstract: audio pre-amplifier bc109 asus BC148 pin configuration geyserville qy3 125 SC4D7U25V adp3421 bc417 module 20R3F
Contextual Info: CLK GEN. ICS9248-61 1$*$12 CPU Revision : V-1 99202-1 COPPERMINE / A2 PAGE:3 PAGE:4,5,6 Geyserville SDRAM CLK BUF ICS9112-17 PAGE:6 PCB LAYER HOST BUS PAGE:3 TOP L1 : COMPONENT L2 : SIGNAL1 L3 : VCC L4 : SIGNAL2 L5 : SIGNAL3 L6 : GND L7 : SIGNAL4

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

GFB7400D

Abstract: FEY101B TCA290A Rifa pmr 2026 EF184 ORP52 Mullard Mullard quick reference guide GZF1200 ITT A2610 YD 6409
Contextual Info: AN INTRODUCTION TO: Cartwright ELECTRONIC COMPONENTS 517 LAWMOOR STREET DIXONS BLAZES INDUSTRIAL ESTATE GLASGOW G5 041-429 7771 Cartwright Electronic Components started trading in April, 1971 as the electronics division of John T. Cartwright & Sons ERD North Ltd . From very modest

bx r433

Abstract: sf hd62 sf hd60 asus SC4D7U25V MLB160808 RY32 BC540 STT278 rx69 sop
Contextual Info: ,&6 1$*$12  &38 &/. * 1 3$*( Revision : VF2 (99202-SF &233(50,1(  $ 3$*( *H\VHUYLOOH 3$*( 6'5$0 &/. %8) ,&6 3$*( 0(0 %86 ',00  3&% /$<(5 +267 %86 723 $*3 %86 1RUWK %ULGJH %;  & 3$*( 9*$ /  6,*1$/ /  9&&

Contextual Info: PLESSEY SE NIC ON D/ DI S CR E TE 7220533 PLESSEY TS Ï F | SEMICOND/DISCRETE 7 5 2 0 S 3 3 O O Cm S D 95D i ~ r~ J 04950 j- 3/ DARUNGTONS POWER DARLINGTON SELECTO R C H A R T Package lc TO -220 10A BDX) TO 39 2A TO-39 A V ceo Volts NPN TO-3 10A PNP 40 -

APY12

Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP