BF117
Abstract: BF294 BF178 BF299 BC236 BF174 BF298 BC312 BF120 BF137
Contextual Info: High Voltage Transistors TYPE NO. POLA RITY CASE MAXIMUM RATINGS HFE Pd VCEO IC ICM* VCER* min mai mW (mA) (V) VCE(sat) IC (mA) VCE max (V) (V) IC (mA) fT min (MHz) Cob Cre* max (MHz) BC236 BC285 BC312 BC393 BC394 N N N P N TO-106 TO-18 TO-39 TO-18 TO-18
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bc236o-106bc285bc312+14bc393bc394bc450o-92fbc530o-92abf117bf294bf178bf299bf174bf298bf120bf137
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ICS9112BM-17
Abstract: asus bc458 BC148 pin configuration bc482 BC451 foxconn SC15P nds0610 bc305
Contextual Info: Falcon2.2 CLK GEN. CY2285-2 Mobile PIII PAGE:3 PCB LAYER 00205-1 L1:COMPONENT Project code :91.44G01.001 PCB P/N = 48.41J01.001 REVISION : 1 L2:GND L3:SIGNAL CLK L4:VCC Celeron SDRAM CLK BUFFER L5:SIGNAL(CLK) verson : A2 or A3 ICS-9112-17 DIMM*2 L8:COMPONENT
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cy2285-244g0141j01ics-9112-17+15m1621mic2563m1535oz6933bcx27ics9112bm-17asusbc458bc148 pin configurationbc482bc451foxconnsc15pnds0610bc305
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2n6218
Abstract: 2sC 4927 393P BC285 BC532 C 4927 triac mw 137 BC394 BC530 BC533
Contextual Info: SE MIC ONDUCT ORS INC CHE D | fll3bbSG Q00D303 fi | T-^ High Voltage Transistors T YPE NO. t a. M A XIM U M R A T IN G S VCE SAT> H FE V C EO Pd (mW •c IC M " (m A) (V ) min « o a. C A SE BC 236 BC 285 BC 312 BC 393 BC394 N N N P N TO-106 TO-18 TO-39 TO-18
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013bbs0d0qd303o-106bc394+10bc530o-92abc5332n62182sc 4927393pbc285bc532c 4927triac mw 137
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BC236
Abstract: BF305 BCW50 BC285 BF137 BF298 BF299 BC312 BCW5 BCX30
Contextual Info: NO. v 'c Cob V CE SAT Tl X M A X IM U M R A T IN G S CEO Pd (mW) 'c m • Im A I (V ) min max BC236 BC285 BC312 BC393 BC394 N N N P N TO-106 T O -18 TO-39 T O -18 TO-18 300 360 800 400 400 50 100 150 100 100 120 120 100 180 180 25 30 50 50 30 200 BC450 BC530
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bc236o-106bc285bc312+13bc393bc394bc450o-92fbc530o-92abf305bcw50bf137bf298bf299bcw5bcx30
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2SA532
Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
Contextual Info: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G
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057-2g1611g1620g1621-2g+161623g1641g1n40011n40021n40041n40052sa532bc109 bc184 bc549bc3172sc734 yms181abc159 82sc876ttp31aml78m06abc357
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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2sb504kpl 30092sb502bly34+6germaniumbf316absx122sd716, 2sb686 35w amplifiersbf197acy52
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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2N6218
Abstract: BC530 T1923 triac mw 137 BC532 BFW45 tr bc 337 393P BC394 BC533
Contextual Info: SE MIC ONDUCT ORS INC CHE D | fll3bbSG Q00D303 fi | T-^ High V oltage Transistors T YPE NO. t a. M A XIM U M R A T IN G S VCE SAT> H FE V C EO Pd (mW •c IC M " (m A) (V ) min « o a. C A SE BC 236 BC 285 BC 312 BC 393 BC394 N N N P N TO-106 TO-18 TO-39
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013bbs0d0qd303o-106bc394+10bc530o-92abc5332n6218t1923triac mw 137bc532bfw45tr bc 337393p
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BF297
Abstract: bf391 t BF179 bf305
Contextual Info: High Voltage Transistors H Fe M A X IM U M R A T IN G S TY PE NO. BC285 BC312 BC393 BC394 BC450 BC530 BC531 BC532 BC533 BCW50 PO LA CASE VcEO m W IcM* (m A ) VcER* (V ) 360 800 400 400 350 100 150 100 100 200 120 100 180 180 100 30 50 50 30 50 TO-92A
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bc285bc312bc393bc394+10bc450bc530bc531bc532bc533bcw50bf297bf391 tbf179bf305
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sf hd62
Abstract: audio pre-amplifier bc109 asus BC148 pin configuration geyserville qy3 125 SC4D7U25V adp3421 bc417 module 20R3F
Contextual Info: CLK GEN. ICS9248-61 1$*$12 CPU Revision : V-1 99202-1 COPPERMINE / A2 PAGE:3 PAGE:4,5,6 Geyserville SDRAM CLK BUF ICS9112-17 PAGE:6 PCB LAYER HOST BUS PAGE:3 TOP L1 : COMPONENT L2 : SIGNAL1 L3 : VCC L4 : SIGNAL2 L5 : SIGNAL3 L6 : GND L7 : SIGNAL4
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ics9248-61ics9112-17440bxadp3421/adp3410+16tps2216/tps221111u50v3kx402kr5f232kr3d10kr3dsf hd62audio pre-amplifier bc109asusbc148 pin configurationgeyservilleqy3 125sc4d7u25vadp3421bc417 module20r3f
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2cy172cy182cy192cy20+122cy21500ma2n2222a 338tfk 9492n1167halbleiter index transistorad161bsy19al103ac128tfk 404tfk 931
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UAA2001
Abstract: MC8500 micromodule m68mm19 1N9388 74ALS643 2N6058 MC145026 2N5160 MOTOROLA MC3340 equivalent pn3402
Contextual Info: MOTOROLA Semiconductors THE EUROPEAN MASTER SELECTION 1982 The total num ber of standard Sem iconductor products available from M otorola ex ceeds 15 0 0 0 device types. To most of our custom ers this total presents an overw helm ing choice. The European Master Selection lists approxim ately 4 0 0 0 preferred devices that re
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0hf400hf600hf806fp10+126f10070hf10uaa2001mc8500micromodule m68mm191n938874als6432n6058mc1450262n5160 motorolamc3340 equivalentpn3402
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BCX29
Abstract: BF199 RF Bf240 BF906 CEB npn BF368 BF199 BCX25 BCX26 BCX28
Contextual Info: I N D U S T R I A L T R A N S I S T O R S TO-92 These devices are special prodbcts ranges intended fo r use in applications w hich require well specified high perform ing devices like high q u a lity am plifier differen tial input, driver stage. NPN PN P
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bcx25bcx26bcx27bcx28+12bcx29bcx30bcx45bcx46bcx47bcx48bf199 rfbf240bf906ceb npnbf368bf199
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BF174
Abstract: BF336 BF178 BC-530 BF117 BF338 bf391 t bc285 b*137 BFI79
Contextual Info: High Voltage Transistors T Y PE P O L A NO . R IT Y C A SE BC285 BC312 BC393 BC394 BC450 N N P N P M A X IM U M R A T IN G S ^CEO Pi Ic Ic.Yl* ^CER* m W (m A) (V) H FE fT VcE(sat) min m ax Ic (m A) VfE (V) m ax (V) Ic (m A ) m in (M H z) m ax (M H z)
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bc285bc312bc393bc394+15bc450bc530bc531bc532bc533bcw50bf174bf336bf178bc-530bf117bf338bf391 tb*137bfi79
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NEC 2SC959
Abstract: BFR39 2SC309 100n AST44 LOW-POWER SILICON NPN 2SC1008A 2SC2274K 2SC3329-BL 2SC959
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number S 10 15 20 25 30 MPS-A06 PMBTAS6 PMBTAS6 FMMT-A06 FMMTA06 MMBTA06 MMBTA06 MMBTA06 MPSA06 PMBTA06 PMBTA06 5MBTA06 BCS3B BFT29 TP58S8 2N585B BFR39 BFR39 BFR39 2S0666 2N4410 BSX21 AST4410 BC447A BC447A BC4BS BC48S-18
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mps-a06fmmt-a06fmmta06mmbta06+13mpsa06pmbta065mbta06nec 2sc959bfr392sc309100nast44low-power silicon npn2sc1008a2sc2274k2sc3329-bl2sc959
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APY12
Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP
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edition-1978ausgabe-1978bs3934so-26+12ot-114ns371apy12byy32ac176aey26bav77bby20bd545bbav27transistor kt 209 maf367
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