BCV72 Search Results

Contextual Info: BCV72 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCV72 is a Silicon NPN Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose applications.

BCV72

Abstract: K8 sot-23 k8 marking transistor
Contextual Info: BCV72 SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BCV72 is a Silicon NPN Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose applications.

A12 marking

Abstract: FMMT-A92R A92 at device marking code S4 Diode marking m7 marking 7E Marking H2 transistor dg sot-23 FMMT-A42 FMMT-A43
Contextual Info: 4 FERRANTI semiconductors FMMT-A92 FMMT-A93 PNP S ilico n Planar High V o lta g e T ra n sis to rs G ENER AL D E S C R IP T IO N These plastic encapsulated, general purpose transistors are designed fo r applications requiring high b re a k d o w n voltages,

A14 marking SOT

Abstract: A13 MARKING CODE A12 marking A12n MARKING 3W SOT23 FMMT-A12 a13 marking sot23 FMMT-A13 marking code AD transistor MARKING A12n
Contextual Info: FERRANTI * semiconductors FMMT-A12 FMMT-A13 FM M T-AÎ4 NPN Silicon Darlington Transistors DESCRIPTION These NPN silicon darlington am plifier transistors o ffe r high gain and input impedance fo r pre-am plifier input applications. Encapsulated in the popular SOT-23 package these devices

marking of m7 diodes

Abstract: BCX19 ferranti transistors marking jp A12 marking 2w sot-23 BCW71 marking code AD Diodes Marking K7 BCW67B
Contextual Info: FERRANTI semiconductors BCX19 BCX20 NPN Silicon Planar M e d iu m Power Transistors DESCRIPTION These devices are intended fo r saturated sw itching, general purpose sw itching and driver applications. Com plementary to th e BCX17 and BCX18. Encapsulated in th e popular SOT-23 package these devices

FMMT3906

Abstract: FMMT3904 equivalent FMMT3905 BCV72 BCW29 BFQ31 BFQ31A BFS20 FMMT3903 FMMT3904
Contextual Info: FERRANTI semiconductors FMMT3903 FMMT3904 NPN Silicon Planar General Purpose Sw itching Transistors D E S C R IP T IO N These d e vice s are intended fo r use in sm all and m edium sign a l a m p lifica tio n a p p lica tio n s fro m d.c. to radio frequencies.

TRANSISTOR A70

Abstract: marking A70 SOT 213 BCV72 BCW29 BCW30 BFQ31 BFQ31A BFS20 FMMT-A70
Contextual Info: 4 FERRANTI semiconductors F M M T -A 70 PNP S ilicon Planar Sm all Signal T ransistor D E S C R IP T IO N T h is device is intended for sm all and m e diu m sign a l a m plification a p p lica tio n s from d.c. to radio frequencies. E ncapsu late d in the p opu lar SO T-23 p a c k a g e the device is

FMMT-A42R

Abstract: A12 marking marking of m7 diodes ferranti sot-23 Marking EJ transistor A92 BCV72 BFQ31 3E transistors FMMT-A42
Contextual Info: FERRANTI FMMT-A42 semiconductors FMMT-A43 NPN S ilicon Planar High V oltage Transistors GENERAL DESCRIPTION These plastic encapsulated, general purpose transistors are designed for applications requiring high breakdown voltages, low saturation voltages and low capacitance.

sot-23 MARKING CODE ZA

Abstract: marking code AD B557 BSS79C BCV72 BCW29 BCW30 BCW31 BFQ31 BFQ31A
Contextual Info: i FERRANTI T II semiconductorsL BSS79B, C NPN Silicon Planar General P urpose S w itc h in g T ra n sistors DESCRIPTION These devices are intended fo r use in sm all and m edium signal a m p lifica tio n ap plication s fro m d.c. to radio frequencies. Encapsulated in the popular SOT-123 package the device is

SOT 213

Abstract: SOT213 bk sot 23 marking ferranti Ferranti transistor marking 952 BCV72 BCW29 BCW30 BFQ31
Contextual Info: IJFERRANTI T IIsemiconductors ^ FMMT4124 N P N S ilico n Planar General Pu rp o se S w itc h in g T ransisto r DESCRIPTION This device is intended for use in small and medium signal amplification applications from d.c. to radio requencies. Encapsulated in the popular SOT-23 package the device is

sd marking bh

Abstract: BCV72 BCW29 BCW30 BFQ31 BFQ31A BFS20 FMMT2484 Ferranti Semiconductors npn 1b
Contextual Info: FMMT2484 CHARACTERISTICS at Tj = 25°C unless otherw ise stated . Collector-base breakdown voltage V(BR)CBO 60 - V lc = 10MA Collector-em itter breakdown voltage V(BR)CEO 60 - V lc = 10m A Emitter-base breakdow n voltage 'A bfuebo 6 - V lE = 1 0 MA Collector cut-off current

BCW29R

Abstract: BCW30R SOT213 BCV72 BCW29 BCW30 BFQ31 BFQ31A ferranti SOT MARKING 213
Contextual Info: FERRANTI semiconductors BCW29 BCW30 PNP S ilicon Planar Small Signal Transistors DESCRIPTION These devices are intended fo r use in low level, general purpose applications. Encapsulated in the popular SOT-23 package these devices are designed sp e cifica lly fo r use in thin and th ick film

BSS66

Abstract: cg 5763 BSS66R BSS67R FMMT2369 BFQ31 BSS67 160i BC 5763 BSS69
Contextual Info: i FERRANTI BSS66 BSS67 T IIsemiconductors L NPN Silicon Planar M e d iu m Power S w itc h in g Transistors DESCRIPTION These devices ere intended fo r general purpose switching applications. Com plementary to th e BSS69 and BSS70. Encapsulated in th e popular SOT-23 package, these

SOA05

Abstract: BCV72 BCW32 BCX19 BCX70 BCX71 ti21E 101002H
Contextual Info: S G S-THOMSON 71C D | 7^=1537 □ □ G 4 CH S 1 | D / w2 ùf THOMSON SEMICONDUCTORS general purpose transistors Characteristic» at 2 5 °C Maximum Typ« ratings NPN PNP Pilot VCEO ti21E@ min mW) (V) 200 200 200 200 2(S) 32 32 32 32 32 110 200 420 120 215

1N4548

Abstract: 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
Contextual Info: Discrete POWER & Signal Technologies Diode Cross-Reference Guide Industry Part Number 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N114 1N115 1N116 1N116A 1N117 1N1170 1N117A 1N118 1N118A 1N119 1N120 1N126 1N126A 1N127 1N127A 1N128 1N128A