BC850 SOT23 Search Results

BC847-BC850

Contextual Info: BC846 . BC850 BC846 . BC850 Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage NPN NPN Version 2012-01-02 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse

BC849

Abstract: BC849B BC849C BC850 BC850B BC850C BC859 BC860
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC849; BC850 NPN general purpose transistors Product specification Supersedes data of 1998 Aug 06 1999 Apr 08 Philips Semiconductors Product specification NPN general purpose transistors BC849; BC850

bc849

Abstract: bc850c
Contextual Info: DISCRETE SEMICONDUCTORS DAT BC849; BC850 NPN general purpose transistors Product data sheet Supersedes data of 1999 Apr 08 2004 Jan 16 NXP Semiconductors Product data sheet NPN general purpose transistors BC849; BC850 FEATURES PINNING • Low current max. 100 mA

BC849

Abstract: BC849B BC849C BC850 BC850B BC850C
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G PACKAGE OUTLINE DETAILS

Transistors

Abstract: BC849 BC850 BC850C BC849 BC849B BC849C BC850 BC850B BC859 BC860
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BC849; BC850 NPN general purpose transistors Product specification Supersedes data of 1999 Apr 08 2004 Jan 16 Philips Semiconductors Product specification NPN general purpose transistors BC849; BC850 FEATURES PINNING • Low current max. 100 mA

BC847B-1F

Abstract: transistor 1f sot-23 MARKING 1F transistor marking 1f BC856 BC846 BC846A BC846B BC847 BC848
Contextual Info: BC846 . BC850 BC846 . BC850 Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage NPN NPN Version 2008-04-15 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse

BC849

Abstract: 2f bc850 2F P marking BC849B BC849C BC850 BC850B BC850C NPN sot23 mark NF
Contextual Info: SEMICONDUCTOR BC849/850 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES E B L L BC849 Collector-Emitter Voltage BC850 Emitter-Base Voltage VCEO 30 UNIT P V 50 30 V 45 P J BC850 VCBO 1 VEBO 5 V IC

Contextual Info: _ BC849 BC850 / SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a plastic SOT-23 package. QUICK REFERENCE D A T A BC849 Collector-em itter voltage VgE = 0 Collector-em itter voltage (open base) BC850 V CES max.

Contextual Info: BC846 . BC850 BC846 . BC850 Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage NPN NPN Version 2011-07-07 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse

BC850

Abstract: BC856 BC859 BC846 BC846A BC847 BC848 BC849
Contextual Info: BC846 . BC850 BC846 . BC850 Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage NPN NPN Version 2006-06-02 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse

BC849

Abstract: 2f bc850 BC849B BC849C BC850 BC850B BC850C
Contextual Info: SEMICONDUCTOR BC849/850 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES E B L L D For Complementary With PNP Type BC859/860. BC850 BC849 Collector-Emitter Voltage BC850 Emitter-Base Voltage 30 VCBO

BC848CMTF

Abstract: BC848AMTF BC847CMTF BC850 sot-23 body marking A 4 BC847AMTF BC846 BC849 BC856 BC860
Contextual Info: BC846- BC850 tm NPN Epitaxial Silicon Transistor Features • Switching and Amplifier Applications • Suitable for automatic insertion in thick and thin-film circuits 3 • Low Noise: BC849, BC850 • Complement to BC856 . BC860 2 1 SOT-23 1. Base 2. Emitter 3. Collector

MARKING 720 SOT23

Abstract: TRANSISTOR 8BB SOT-23 8BB fairchild sot-23 Device Marking pc sot-23 body marking 720 TRANSISTOR bc846 720 SOT23 sot-23 body marking 02 BC846 -BC850 SOT23 transistor MARKING my
Contextual Info: BC846- BC850 tm NPN Epitaxial Silicon Transistor Features • Switching and Amplifier Applications • Suitable for automatic insertion in thick and thin-film circuits 3 • Low Noise: BC849, BC850 • Complement to BC856 . BC860 2 1 SOT-23 1. Base 2. Emitter 3. Collector

sot-23 Marking B1

Abstract: BC850 fairchild sot-23 Device Marking pc b1 marking sot-23 720 SOT23 BC846 BC849 BC856 BC860 MARKING 720 SOT23
Contextual Info: BC846 - BC850 NPN Epitaxial Silicon Transistor Features 3 • Switching and Amplifier Applications • Suitable for automatic insertion in thick and thin-film circuits • Low Noise: BC849, BC850 • Complement to BC856 . BC860 2 1 SOT-23 1. Base 2. Emitter 3. Collector

2f bc850

Abstract: BC849 BC849B BC849C BC850 BC850B BC850C
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G

MARKING 2F SOT23

Abstract: sot23 marking 2f 2f bc850 BC850 marking 2f 3
Contextual Info: SEMICONDUCTOR BC850 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 2F 1 2 Item Marking Description Device Mark 2 BC850 hFE Grade F F, G * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

Contextual Info: BC846 - BC850 NPN Epitaxial Silicon Transistor Features 3 • • • Switching and Amplifier Applications Suitable for automatic insertion in thick and thin-film circuits Low Noise: BC849, BC850 • Complement to BC856 . BC860 2 1 SOT-23 1. Base 2. Emitter 3. Collector

BC850C

Abstract: NB SOT-23 NPN BC849 BC849B BC849C BC850 BC850B BC850C equivalent
Contextual Info: 7110ÖPb 00bö42fl 2ST • P H I N BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a plastic SOT-23 package. QUICK REFERENCE DATA BC849 BC850 Collector-emitter voltage V gg = 0 V CES max. 30 50 V Collector-emitter voltage (open base)

bc850

Contextual Info: BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N-P N transistors in a plastic SO T-23 package. Q U IC K R E F E R E N C E D A T A BC849 BC850 V CES max. 30 50 v CEO max. 30 45 C o lle ctor cu rre n t peak value 'CM max. 200 200 T ota l power dissipation up to T am fj = 25 °C

BC850 SOT23

Contextual Info: BC847 BC849 BC846 BC848 BC850 SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS ISSUE 6 - JANUARY 1997 PARTMARKING DETAILS COMPLEMENTARY TYPES BC846A-Z1A BC848B-1K BC846 BC856 BC846B-1B BC848C-Z1L BC847 BC857 BC847A-Z1E BC849B-2B BC848 BC858 BC847B-1F BC849C-2C

C849

Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1998 Aug 06 Philips Sem iconductors 1999 Apr 08 PHILIPS Philips Semiconductors Product specification NPN general purpose transistors BC849; BC850 FEATURES PINNING • Low curren t max. 100 mA

BC848 equivalent

Abstract: bc847 X10-4 BC849C-2C spice bc847 BC846B BC847A BC847C BC848A BC848C
Contextual Info: SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS BC846 BC848 BC850 ISSUE 6 - JANUARY 1997 PARTMARKING DETAILS BC847 BC849 COMPLEMENTARY TYPES BC846A–Z1A BC848B–1K BC846 BC856 BC846B–1B BC848C–Z1L BC847 BC857 BC847A–Z1E BC849B–2B BC848 BC858 BC847B–1F

B 660 TG

Contextual Info: BC847 BC849 BC846 BC848 BC850 SOT23 IMPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS PARTMARKING DETAILS:BC848B - 1K BC846A - 1A BC846B - 1B BC848C - 1L 1E BC849B - 2B BC847A - BC847B - 1F BC849C - 2C 1G BC850B - 2F BC848A - 1J BC850C - 2G BC847C - ABSOLUTE MAXIMUM RATINGS

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BC846-BC850 NPN SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATION „ FEATURES * Suitable for automatic insertion in thick and thin-film circuits. * Complement to BC856 … BC860 „ ORDERING INFORMATION Ordering Number Lead Free