BC33716 Search Results

transistor 2N3906 smd 2A SOT23

Abstract: 2n3904 TRANSISTOR REPLACEMENT GUIDE BC327-40 SMD bc107 TRANSISTOR SMD CODE PACKAGE SOT23 TRANSISTOR BC337-25 PNP BC548 TRANSISTOR REPLACEMENT BC327-25 SMD TRANSISTOR BC337 SMD 2n3906 REPLACEMENT MMBT3094
Contextual Info: Small Signal Transistors Industry Standard BF722 BF723 BFN38 CZTA42 CZTA92 KSA539 KSA643 KSA733 KSC1623 KSC815 MMBT3094 MMBT3906 MMBT4401 MMBT4403 MMBTA42 ST Nearest ST Replacement Industry Standard BF720 BF721 BF720 STZTA42 STZTA92 MMBTA92 MPSA42 MPSA92 MSB709

603 transistor npn

Abstract: 2N3906 DS transistor BC 312 603 transistor npn dj bipolar BC transistor BC847C di PN 2n2222A 2n3904 2n3906
Contextual Info: ALLEGRO MICROSYSTEMS INC bbE D • 0504330 000b515 4bS ■ ALGR BIPOLAR TRANSISTORS ELECTRICAL CHARACTERISTICS at T = + 25°C A ^CBO 'c Max. V BH CBO V (BR)CEO V(BR)EBO Max. <mA) (V) (V) (V) (nA) ^CEO @ V CB Max. @ v CE (V) (nA) (V) Device Allegro Type Type

Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. BC207 Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) ^CBO ^CEO ^EBO (V) Min (V) Min (V) Min Pd 'c (W) W @Tc=25°c SO 45 5 0.625 0.1 ‘CBO V CB w ï(V ) Max 'c e s m ^ce

bc5478

Abstract: 2n2222a SOT23 BC557 smd sot23 2n2222 sot23 BC547 smd BC547 2N2222 2n3906 sot23 2N2222 SMD SOT23 2n2907 smd 2n4401 smd
Contextual Info: SMD w COMPONENT i w i h www.microelectronoc.co.yu i i S M D S E M IC O N D U C T O R S ON M A R K IN G ^ ^ ^ e l e c t r B n ic microe@ptt.yu M A R K IN G T Y PE N U M B E R PACKAGE C O N V E R C IN A L TY PE M A R K IN G T Y PE N U M B E R PACKAGE C O N V E R C IN A L

Contextual Info: Lead Mounted Transistors NPN Transistors/TO-92 Type Number 2N4124 2N5172 2N5088 PN2222A 2N3904 2N4401 MPSA05/ITTA05 MPSA06/ITTA06 2N5551 MPSA42 VCEO Volts 25 25 30 40 40 40 60 80 160 300 hpE @ V ce/Ic V/mA 120-360 100-750 350-1400 100-300 100-300 100-300 min. 50

Contextual Info: BC337-16 / BC337-25 BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings*

CS9013

Abstract: CS9011 CS9012 BC327 SOT 23-6 CS8050 BC547 CS9018 BF494 to-92 .y1 do-213ac
Contextual Info: Discrete POWER & Signal Technologies Pro Electron Diode Series Leaded Switching Diodes Device No. Vrrm I rrm V Min (nA) Min BAV19 BAV20 BAV21 BAV102 BAV103 100 150 200 150 200 100 100 100 100 100 BAW62 BAW76 BAX13 BAX16 BAY19 75 50 50 150 100 BAY71 BAY72

BC207

Abstract: BC208B BC209C BC237 BC237A BC237B BC237C BC238 BC238A BC238B
Contextual Info: Maximum Ratings Type No. BC207 V CBO ''CEO V EBO V Min (V) Min (V) Min 50 45 5 Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Pd (A) <W) @Tc=25°c 0.625 0.1 *c b o vca m ^CES VCE @ (V) (mA) Max (V) Max Min 0.015 40 lc « (mA) I fe 110

BC337

Abstract: BC337 NPN transistor BC338 OF TRANSISTOR BC337 transistor bc337 npn transistor BC338 NPN Transistor TO92 300ma BC337 hfe BC338-40 TRANSISTOR BC337-25
Contextual Info: BC337 / BC338 NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE G H Power Dissipation CLASSIFICATION OF hFE Product-Rank BC337-16 1Collector 2Base 3Emitter J

diode BYW 64

Abstract: B81121 X2 mkt TDB7812T B81121 B32530 1nf 100v mkt 100v mkt b81121 x2 7812T B41822
Contextual Info: Monitor -IC Nr 1 2 3 4 5 6 7 8 9 10 11 12 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 Name BR1 C11 C12 C13 C14 C15 C21 C22 C23 C24 C25 C26 C27 C31 C32 C33 C34 C35 C36 C37 C38 C39 C41 C42 C43 C44 C51 C52 C53 C54 C61 C62

BC337

Abstract: TRANSISTOR BC337 NPN general purpose transistor BC337 BC337-40 NPN transistor TRANSISTOR BC337-25 PNP BC337-25 PNP transistor BC33716 TRANSISTOR BC337-25 BC337 pnp transistor bc337-25 Philips
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC337 NPN general purpose transistor Product specification Supersedes data of 1997 Mar 10 1999 Apr 15 Philips Semiconductors Product specification NPN general purpose transistor BC337 PINNING FEATURES

MMS8050-L

Abstract: 2SB1073R Bd882 2SD667C 2SD667AC 2SD669AC sot23-3 marking 63 zt5551 2SD468C marking 2sd1664
Contextual Info: TM Micro Commercial Components SMALL SIGNAL&POWER TRANSISTORS MCC Part Number VCEO V IC (A) hFE @ VCE & IC VCE(sat) & VBE(sat) @ IC & IB hFE hFE VCE IC Min. Max. (V) (mA) VCE(sat) VBE(sat) Max.(V) Max.(V) fT @ VCE & IC Polarity IC IB fT Min. TPY. fT Max.

BC331

Abstract: BC331 transistor transistor BC331 BC337 bc337-40 npn transistor BC337A BC337-26 TRANSISTOR BC338 BC327 BC327A
Contextual Info: BC337 BC337A BC338 1 PHILIPS INTERNATIONAL SbE D • 7110fl2b OOMllflfl DTX H I P H I N - SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 envelopes, primarily intended for use in driver and output stages of audio amplifiers. The BC337, BC337A, BC338 are complementary to the BC327, BC327A and BC328 respectively.

BC338-16

Abstract: BC337 BC337 B 011
Contextual Info: MCC Features • • • BC337-16/25/40 BC338-16/25/40
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Capable of 0.625Watts of Power Dissipation. Collector-current 0.8A Collector-base Voltage :VCBO=50V BC337 , VCBO=30V(BC338)

MBR1620CT

Abstract: 1.5Ke240 MBR5020 MBR5045PT BC337 AP6KE15C S9012 s9018 MP106 MB-106
Contextual Info: MCC PART INDEX Diodes PART NUMBER 1.5KE10(C)(A) 1.5KE100(C)(A) 1.5KE11(C)(A) 1.5KE110(C)(A) 1.5KE12(C)(A) 1.5KE120(C)(A) 1.5KE13(C)(A) 1.5KE130(C)(A) 1.5KE15(C)(A) 1.5KE150(C)(A) 1.5KE16(C)(A) 1.5KE160(C)(A) 1.5KE17(C)(A) 1.5KE170(C)(A) 1.5KE18(C)(A) 1.5KE180(C)(A)

tda8362b

Abstract: OM8384J OM8383S TDA8363C msc 1697 BGY252 tda9155 PHILIPS OM8383S tda5331t BGY262
Contextual Info: Philips Semiconductors Product Discontinuation Notice DN45 June 30, 2001 SEE DN45 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC337，-16，-25,-40 TRANSISTOR（NPN ） BC338，-16，-25,-40 TO—92 FEATURES Power dissipation PCM : 0.625 W （Tamb=25℃） Collector current ICM : 0.8 A Collector-base voltage

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

bc337

Abstract: cbc337 BC337 figure BC337-16 BC337-25 BC33740 BC337-40 BC-337 BC338-25 bc33716
Contextual Info: ON Semiconductort BC337, BC337-16, BC337-25, BC337-40, BC338-25 Amplifier Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC337 BC338 Unit Collector–Emitter Voltage VCEO 45 25 Vdc Collector–Base Voltage VCBO 50 30 Vdc Emitter–Base Voltage VEBO

BC327 BC337 noise figure

Abstract: bc550 bc560 MPSA18 BC550 BC337-25 CBE BC327 noise figure BC337 CBE BC327 CBE BC338/BC328 BC414C BC337 noise
Contextual Info: LO W N O IS E A N D GOOD H F E L IN E A R IT Y These devices are designed to use on applications where good H F E linearity and low noise characteristics are required: Instrumentation, Hi-Fi Preamplifier. NPN BC239 BC239A BC239B BC239C BC413 BC413B BC413C

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

F B0347

Abstract: b0349 BC184LB B0679 35S20 BDX330 B0242c f b0349 B0346 BD370-6
Contextual Info: Pro Electron Series in o PRO ELECTRON SERIES Bipolar—see page 5-37 for JFET o Type No. BC107 BC107A Can Styl« TO-18 TO-18 VCES* v CBO (VI M in 50 50 v CEO (V) M in 45 45 v EB0 (V) M in 6 6 •c e s * 'CBO a InA) Max 15* 15* V CB IV) 50 50 H rh Ne 1 kH z *

BC107 to92

Abstract: equivalent for BC337 NPN general purpose transistor BC337 BC327 NPN transistor datasheet bc337 transistor datasheet 2N4126 bc548 2N4124 bc548 Transistor BC177 transistor BC337-16 DATASHEET Transistor BC107
Contextual Info: Philips Semiconductors Small-signal Transistors Selection guide LEADED DEVICES continued PNP GENERAL PURPOSE LOW-POWER TRANSISTORS TYPE NUMBER PACKAGE VCEO max. (V) IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) 250 2N4124 NPN COMPL. PAGE 2N4126

BC338

Abstract: BC337A BC337 BC327 BC327A BC328 BC337-16 DDE7530 DDE7532
Contextual Info: b^E D • bL S3^131 DDE753D 5T4 BC337 BC337A BC338 IAPX N AflER P H I L I P S / D I S C R E T E SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic T O -92 envelopes, p rim a rily intended fo r use in d riv e r and o u tp u t stages o f a udio a m plifiers.