BC10 Search Results

Contextual Info: Pb MSL1 Pb-free * Pb Free Part Customer Name Standard Specification System 3GPP2:BC10 and 3GPP:B5+B18 Rx 50/100ohm Date Part Number F5KY877M0B4NH Version 1.0 a Jan. 30, 2013 Final Table 1.Electrical specifications Passband : 860 ~ 894 MHz Item Condition

bcv59

Abstract: N705 bcv-59 ZTX301
Contextual Info: ’ ZETEX SEMICONDUCTORS IbE D • =1170570 000b675 0 ■ ZETB ' SEM IC O N D U C T O R DICE ELECTRICAL C H A RA C TERIST ICS NPN SM A LL SIGNAL TRA N SISTO R S Dice type- BC546A BC546B ZT X304 BCY65EA BC182 BC107A BC107B BC237 BC547A BC547B BC550B BC550C

BC10-M30-RZ3X

Contextual Info: Subject to change without notice • Hans Turck GmbH & Co.KG 2002 • Edition: Hans Turck GmbH & Co.KG • Postfach • D-45466 Mülheim an der Ruhr • Telefon 02 08/49 52-0 • Telefax 02 08/49 52-264 Capacitive sensor BC10-M30-RZ3X M30 x 1,5 36/5 61

BC10-M30-AP4X-H1141

Contextual Info: Subject to change without notice • Hans Turck GmbH & Co.KG 2002 • Edition: Hans Turck GmbH & Co.KG • Postfach • D-45466 Mülheim an der Ruhr • Telefon 02 08/49 52-0 • Telefax 02 08/49 52-264 Capacitive sensor BC10-M30-AP4X-H1141 M30 x 1,5 61

150M

Abstract: BC109CSM
Contextual Info: BC109CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)

Contextual Info: r z 7 S G S -m O M S O N ^ 7 # [ïffloeœiiLnera «® BC107 BC108 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS DESCRIPTION The BC107 and BC108 are silicon planar epitaxial NPN transistors in TO-18 metal case. They are suitable for use in driver stages, low

BC107 pin configuration

Abstract: BC109 characteristic CDIL BC107 BC109 pin configuration DATASHEET Transistor BC107 Transistor BC107 BC109 BC107A BC107 transistor BC109
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTORS BC107/A/B/C BC108/A/B/C BC109/A/B/C TO-18 Metal Can Package Low Noise General Purpose Audio Amplifiers ABSOLUTE MAXIMUM RATINGS DESCRIPTION

BC107B

Abstract: BC107 characteristic BC107B, MOTOROLA
Contextual Info: MOTOROLA Order this document by BC107B/D SEMICONDUCTOR TECHNICAL DATA Transistors BC107B NPN Silicon COLLECTOR 3 EMITTER MAXIMUM RATINGS Symbol Value Unit Collector-Em itter Voltage v CEO 45 Vdc Collecto r-B ase Voltage v CBO 50 Vdc Em itter-Base Voltage Rating

Contextual Info: VRLA Rechargeable Battery Measures Technology Values Innovation BC10-12 FEATURES Maintenance free no water topping-up required No free acid(Non-spillable battery) Can be used in any orientation(excluding used inverted) Absorbent Glass Mat technology for efficient gas recombination

BC10-P30SR-VP4X2

Contextual Info: Subject to change without notice • Hans Turck GmbH & Co.KG 2002 • Edition: Hans Turck GmbH & Co.KG • Postfach • D-45466 Mülheim an der Ruhr • Telefon 02 08/49 52-0 • Telefax 02 08/49 52-264 Capacitive sensor BC10-P30SR-VP4X2 M30 x 1,5 36/10

BC10-S30-AZ3X-B3131

Contextual Info: Subject to change without notice • Hans Turck GmbH & Co.KG 2002 • Edition: Hans Turck GmbH & Co.KG • Postfach • D-45466 Mülheim an der Ruhr • Telefon 02 08/49 52-0 • Telefax 02 08/49 52-264 Capacitive sensor BC10-S30-AZ3X-B3131 M30 x 1,5 60

Contextual Info: Capacitive sensor BC10-M30-AP4X • Threaded barrel, M30 x 1.5 ■ Chrome-plated brass ■ Fine adjustment via potentiometer ■ DC 3-wire, 10…65 VDC ■ NO contact, PNP output ■ Cable connection Wiring diagram Type code Ident no. BC10-M30-AP4X 25010 Rated operating distance Sn

BC253C

Abstract: BC253B 305900 BC251B 2N3963 BC213L BC214 BC214KC BC251A BC252A
Contextual Info: ITT Semiconductors PNP Transistors P N P Sm all Sign a l Silico n Transistors Epoxy Package TO-92 and Metal Can (TO-18). For general purpose applications. Range complementary to BC107/BC171 series. O u tlin e D ra w in g M o . 73 ap p lie s fo r T O -92 types.

F B0347

Abstract: b0349 BC184LB B0679 35S20 BDX330 B0242c f b0349 B0346 BD370-6
Contextual Info: Pro Electron Series in o PRO ELECTRON SERIES Bipolar—see page 5-37 for JFET o Type No. BC107 BC107A Can Styl« TO-18 TO-18 VCES* v CBO (VI M in 50 50 v CEO (V) M in 45 45 v EB0 (V) M in 6 6 •c e s * 'CBO a InA) Max 15* 15* V CB IV) 50 50 H rh Ne 1 kH z *

ic 8123

Contextual Info: SILICON EPITAXIAL NPN TRANSISTOR BC109CSM • Hermetic Ceramic Surface Mount Package • Designed For Low Noise General Purpose Amplifiers, Driver Stages and Signal Processing Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

bc109c

Abstract: BC107 characteristic BC109C MOTOROLA bc108b BC107A TR BC c108b 109C
Contextual Info: BC107, A, B thru BC109C M A XIM U M RATINGS Rating C o lle c to r-E m itte r V o lta g e Symbol BC 107 BC 108 BC 109C Unit v CEO 45 25 25 V dc C o lle c to r-B a s e V olta g e v CBO 50 30 30 Vdc E m itte r-B a s e V olta g e v EBO 6 5 5 C o lle c to r C u rre n t — C o n tin u o u s

D5NF878M0P1ET-Z

Contextual Info: Pb MSL1 Pb-free * Pb Free Part Customer Name Standard System BC0 + BC10 Duplexer Date Part Number D5NF878M0P1ET Version 3.1bc March 31, 2011 Table 1. Electrical Specification Item Tx to ANT Min Typ Max Insertion loss 817~849 - 1.9 2.5 dB *1 Ripple 817~849

bc1078

Abstract: BC317 BC167 BC1O7 BCI69 BC168 bc108 cbe BC257 bc2378 T0-92A
Contextual Info: BC107,8,9 BC167,8,9 BC237,8,9 BC317,8,9 THE ABOVE TYPES ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC107, 8, 9 are complementary to BC177, 8, 9. BC167, 8, 9 are complementary to BC257, 8, 9.

BC148B

Abstract: BC159 tt 800 BC147 bc172b
Contextual Info: Low Level and General Purpose Amplifiers MAXIMUM RATINGS POLA­ RITY CASE BC107 BC108 B C I09 N N N BC147 BC148 B C I49 TYPE NO. H FE VfE sat fr c ob N.F. max (dB) Ic (mA) VCE (V) max 2 2 2 5 5 5 0.6 0.6 0.6 100 100 100 150 150 150 6 6 6 10 10 4 tt 2 2 2

Contextual Info: •er | « BC109 SEMICONDUCTOR FORWARD EflEBNAUONAL ELECTRONICS LID. NPN EPITAXIAL SILICON TRANSISTOR TECHNICAL DATA GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS a t T a i r i F ^ r Symbol R ating C h m c te ristk 30 Collector-Base Voltage Vcbo Collector-Emitter Voltage

EM- 546 motor

Abstract: 1kw full bridge reference design
Contextual Info: HIGH P E R F O R M A N C E B R U S H L E S S DC M O TOR D RIVER APÉX BC10 H T T P V / W W W .APEXMICROTECH.COM 800 546-APEX (800) 546-2739 APPLICATIONS • 3 PHASE BRUSHLESS MOTOR CONTROL BLOCK DIAGRAM j.Q_ _ _ _ _ Ç BC10 FEATURES • 10V TO 100V MOTOR SUPPLY AT 10A CONTINUOUS AND

transistor bsw 67

Abstract: transistor BD139 PH 71 BC547 BSR512 BCY883 BSW 68 transistor BC548 Transistor 2N2219A Transistor BSX45 PHILIPS PN2222A
Contextual Info: Concise Catalogue 1996 P hilip s Semiconductors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal transistors GENERAL-PURPOSE LOW-FREQUENCY BIPOLAR TRANSISTORS ratings type num ber P,o. max. mW hpE @ min./max. (V) 'c max. (mA) BC107

Contextual Info: BC109PK Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V) I(C) Max. (A)50m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)15nx @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

Contextual Info: BC107P Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)50 I(C) Max. (A)200m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)