BC 500 Search Results

TRANSISTOR BC 208

Abstract: TRANSISTOR BC 158 TRANSISTOR BC 157 transistor BC-148 bc 106 transistor transistor BC 209 FOR TRANSISTOR BC 149 B BC 114 transistor transistor bc 209 b TRANSISTOR BC 187
Contextual Info: BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC 183L 184 184L 186 187 179 181 182 182L 183 172 173 174 177 178 167 168 169 170 171 135 154 157 158 159 114 132 147 148 149 107 108 109 110 113 •c m Z Z Z “0 -0 "0 "0 2

T092A

Abstract: transistors BC 459
Contextual Info: SIGNAL TYPES ptot * T Y P E NPN BC 170 BC 171 BC 172 BC 173 BC 174 BC 237 BC 238 PNP (W) 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 B C £39 BC BC BC BC BC BC BC 413 414 546 547 548 549 550 BC BC BC BC BC

bc 945

Abstract: BC 945 p BC 948 BC 937 BD 139 N ic 933 bd BD135N bu110 bd 3055 bd135
Contextual Info: FA - Bauelementeinformation VT Niederfrequenztransistoren, nach Bauformen geordnet Transistoren im TO-92-Gehäuse Typ o NPN PNP BC 182 BC 184 BC212 BC214 BD 237 BC238 BC239 BC 307 BC 308 BC 309 BC 327 BC 328 BC 337 BC 338 BC 414 BC 416 BC 546 BC 548 BC 549

C 337-40

Abstract: c 337 25 337-40 c 33740 transistors BC 293 327-40 337 marking code BC 337 BC337 NPN 337
Contextual Info: PNP Silicon AF Transistors BC 327 BC 328 High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 337, BC 338 NPN ● 2 3 Type Marking Ordering Code BC 327 BC 327-16 BC 327-25 BC 327-40 BC 328

transistors BC 23

Abstract: 14 SOT-23 sot-23 ce 110 sot 23 SOT-23 BSS sot-23 npn BCW60 BCW65 BCX41 BCX55
Contextual Info: AF transistors M axim um ratings PNP = P NPN = N V Kdeo BC 817 BC 818 BC 846 BC 847 BC 848 BC 849 BC 850 N N N N N N N BC 807 BC 808 BC 856 BC 857 BC 858 BC 859 BC 860 P P P P P P P BCW60 BCW65 BCW 66 BCX41 BCX 54 BCX55 BCX 56 BCX 68 BCX 70 N N N N N N N N

Contextual Info: SIEMENS NPN Silicon Darlington Transistors BC 875 . BC 879 • High current gain • Low collector-emitter saturation voltage • Complementary types: BC 876, BC 878 BC 880 PNP Type Marking BC 875 BC 877 BC 879 Ordering Code PinClonfiguration 1 2 3 Package1)

c 337 25

Abstract: 337 marking code bc337 c 33740 337-40 338 marking code bc 337 equivalent bc 170 c npn bc 337 NPN 337
Contextual Info: NPN Silicon AF Transistors BC 337 BC 338 High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 327, BC 328 PNP ● 2 1 Type Marking Ordering Code BC 337 BC 337-16 BC 337-25 BC 337-40 BC 338

transistors BC 327

Abstract: BC328 327-40 C311 IC 32725 npn bc 337 BC327 BC 32740 C312 BC327-40
Contextual Info: PNP Silicon AF Transistors BC 327 BC 328 High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 337, BC 338 NPN ● 2 3 Type Marking Ordering Code BC 327 BC 327-16 BC 327-25 BC 327-40 BC 328

WM 53B

Contextual Info: SIEM ENS PNP Silicon AF Transistors • • • • BC 636 . BC 640 High current gain High collector current Low collector-emitter saturation voltage Complementary types: BC 635, BC 637, BC 639 NPN Type Marking BC 636 BC 638 BC 640 Ordering Code Q68000-A3365

BC87

Contextual Info: SIEMENS PNP Silicon Darlington Transistors • BC 876 . BC 880 High current gain • High collector current • Low collector-emitter saturation voltage • Complementary types: BC 875, BC 877, BC 879 NPN Type Marking BC 876 BC 878 BC 880 Ordering Code

Transistor - BC 547, CL 100

Abstract: bc 104 npn transistor transistor C 548 B bc 408 equivalent BC548BC bc 558 equivalent bc 103 transistor c 548 equivalent of BC 399 NPN Transistor TRANSISTOR C 557 B
Contextual Info: BC546*BC 547 *BC 548 *BC549. BC 550 NPN S IL IC O N TR A N S IS T O R T R A N S IS T O R N P N S IL IC IU M Compì, of BC 556 at 560 Preferred device D is p o s itif recommandé General purpose BC 546/BC 547/BC 548 Usage général BC 546/BC 547/BC 548 Low noise BC 549/BC 550

hFE-1000 BC

Abstract: C943 bc879 c942 bc 384 b bc 877 bc 390 C853 bc877 876 pin
Contextual Info: NPN Silicon Darlington Transistors BC 875 … BC 879 High current gain ● Low collector-emitter saturation voltage ● Complementary types: BC 876, BC 878 BC 880 PNP ● 2 3 1 Type Marking Ordering Code Pin Configuration 1 2 3 Package1) BC 875 BC 877 BC 879

TRANSISTOR C 557 B

Abstract: transistor B 560 transistor c 557 TRANSISTOR BC 560 transistor c 558 transistor bc 557 c le B 557 PNP TRANSISTOR TRANSISTOR BC 553 transistor 557 b BC557
Contextual Info: BC 556 *BC 557 BC 558 BC 559, BC560 PNP SIL IC O N T R A N SIS T O R T R A N S IS T O R P N P S IL IC IU M Compì, of BC 546 at BC 550 % Preferred device D isp o sitif recomm andé General purpose BC 556/BC 557/BC 558 Usage général BC 556/BC 557/BC 558 —65 V

C942

Abstract: C943 bc 877 C62702-C941 C62702-C943 C62702-C942 bc876 bc880 bc 880 bc 878
Contextual Info: PNP Silicon Darlington Transistors BC 876 … BC 880 High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 875, BC 877, BC 879 NPN ● Type Marking Ordering Code BC 876 BC 878 BC 880 – C62702-C943

bc 352 b

Abstract: siemens heat sink bc 640 bc 639 DATASHEET bc 639 Q68000-A2285 Q68000-A3360 Q68000-A3361 Q68000-A3365 Q68000-A3366
Contextual Info: NPN Silicon AF Transistors BC 635 … BC 639 High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 636, BC 638, BC 640 PNP ● 2 3 Type Marking Ordering Code BC 635 BC 637 BC 639 – Q68000-A3360

bc 640

Abstract: BC636 BC640 Q68000-A3366 Q68000-A3367 Q68000-A3365 marking 636
Contextual Info: PNP Silicon AF Transistors BC 636 … BC 640 High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 635, BC 637, BC 639 NPN ● 2 3 1 Type Marking Ordering Code BC 636 BC 638 BC 640 – Q68000-A3365

2N9303

Abstract: cbc 546 CBC 546 c 250.250 BC108A 10745 2N2483 107bbc
Contextual Info: NPN Silicon Transistors NPN Silicon Planar Transistors for low-level audio applications Common maximum ratings Type b v CFO V BVCSO V b v ebo PN PN PN PN PN PN PN PN PN PN - BC 107 BC 107 A BC 107 B BC 108 BC 108 A BC 108 B BC 108 C BC 1092 BC 109 B2 BC 109 C2

BC639

Abstract: BC 639 Q68000-A2285 Q68000-A3360 Q68000-A3361 BC635 complementary 637 638 bc63
Contextual Info: NPN Silicon AF Transistors BC 635 … BC 639 High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 636, BC 638, BC 640 PNP ● 2 3 1 Type Marking Ordering Code BC 635 BC 637 BC 639 – Q68000-A3360

C2320

Abstract: BC 170 transistor Q62702-C2320 transistor 6cs TRANSISTOR c2324 BC817W transistor bc icbo nA npn transistor marking A02 c2278 C2324
Contextual Info: BC 817W,BC 818W NPN Silicon AF Transistor l For general AF applications l High collector current l High current gain l Low collector-emitter saturation voltage l Complementary types: BC 807W, BC 808W PNP Type Marking BC 817-16W BC 817-25W BC 817-40W BC 818-16W

bc 877

Abstract: C853 C62702-C853 C62702-C854 C62702-C855 marking bc BC879 bc 879 BC875
Contextual Info: NPN Silicon Darlington Transistors BC 875 … BC 879 High current gain ● Low collector-emitter saturation voltage ● Complementary types: BC 876, BC 878 BC 880 PNP ● Type Marking Ordering Code BC 875 BC 877 BC 879 – C62702-C853 C62702-C854 C62702-C855

BS4 siemens

Abstract: BC 241 d0415 bc167 siemens bc169c siemens BC167 BC169B BC169 siemens Pm 90 87 168c
Contextual Info: S IE D i • Ö235b05 OGMlSlb ‘î l S « S I E G SIEMENS AKTIEN6ESELLSCHAF NPN Silicon AF Transistors BC 167 . BC 169 • High current gain • Low collector-emitter saturation voltage • Complementary types: BC 257, BC 258, BC 259 PNP Type BC BC BC

bc 540

Abstract: BCW90 bcw 94 b ESM636 BCW91B ESM 639 BCW 90 BCW91 ESM638 Esm635
Contextual Info: o general purpose transistors — plastic case transistors usage général — boîtier plastique M axim um ratings Type NPN PNP THOMSON-CSF Characteristics at 25°C Ptot VCEO mW (V) BC 559 BC 559 B BC 559 C 500 25 125 200 420 BC 560 BC 560 B BC 560 C 500

BU 808 DX

Abstract: ei50 bu 808 df 3AR 3ER 3FR BB 4130 BC860 BCV26 T3 BCV26 BCV46 BCW29
Contextual Info: /T T SGS-THOMSON SURFACE MOUNT DEVICES Ä 7# U D M iyiC TM Ö tgS GENERAL PURPOSE & INDUSTRIAL PNP GENERAL PURPOSE TRANSISTORS Vc e O 'c ptot hFE 'C LU VcBO O > Type / Iß max VCES* BC 807-16 BC 807-25 BC 807-40 BC 808-16 BC 808-25 BC 808-40 BC 856 A BC 856 B

bc 303 transistor

Abstract: BC 109 Transistor TRANSISTOR BC 109 BC 107 transistor A 107 transistor transistor bc 107 bc 107 npn transistor BC 108 transistor BC107 BC109
Contextual Info: * B C 107 * BC 108 BC 109 \IPN SILICON TRANSISTORS, EPITAXIAL PLANAR rRANSISTORS NPN SILICIUM, PLANAR EPITAXIAUX Jompl. of BC 177, BC 178, BC 179 îfc Preferred device Dispositif recommandé The NPN "plan epitaxial" transi ton BC 107, 3C 108 and BC 109 are intended for use in