FLS35BDS Search Results
FLS35BDS Datasheets Context Search
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Contextual Info: BSO 305N I nf ineon technologies Preliminary Data SIPMOS Small-Signal-Transistor Product Summary Features 30 V • Dual N Channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current |
OCR Scan |
sis0005q67041-s4028s35bq5q133777+5 | |
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Contextual Info: Û 2 35 hü 5 QüfilbOl T7fi S IE M E N S PROFET BTS410H2 Smart Highside Power Switch Features • • • • • • • • Overload protection Current limitation Short circuit protection Thermal shutdown Overvoltage protection including load dump Fast demagnetization of inductive loads |
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bts410h2fls35bds | |
neosid v6
Abstract: OV56 AM2 Siemens neosid v7 V55D neosid CAP neosid 3.3 NEOSID nr. 9181 Diode LT 330D
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10khz13khz2x10khz-19khz3x13khz-38khz+14 | |
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Contextual Info: SIEMENS 1 M X 36-Bit Dynamic RAM Module 2 M X 18-Bit Dynamic RAM Module HYM 361110/20S-60/-70/-80 Advanced Information • 1 048 576 words by 36-bit organization (alternative 2 097 152 words by 18-bit) • Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) |
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36-bit18-bit361110/20s-60/-70/-80 | |
726L1Contextual Info: • fi23SbOS □□61715 >443 ■ SIEMENS PROFET BTS726L1 Smart Two Channel Highside Power Switch Product Summary Features • • • • • Overload protection Current limitation Short-circuit protection Thermal shutdown Overvoltage protection including load dump |
OCR Scan |
fi23sbosbts726l1p-dso-20-9q67060-57003-a2+1 | |
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Contextual Info: SIEMENS Silicon PIN Diode BA 596 Preliminary Data • Current-controlled RF resistor for switching and attenuating applications. • Frequency range above 1 MHz • Designed for low IM distortion Type Marking Ordering Code tape and reel BA 596 white P Q62702-A954 |
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q62702-a954od-323eha07001g0bb577 | |
siemens S5 ST 50
Abstract: 80C515 SAB 8051 p cpu 222 siemens adc with 8051 microcontroler free sample 80C517 80C535 8oC51 a to d converter interface with 8051 mcp01
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80c515a/83c515a-583c515a-580c515a80c51+12 | |
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Contextual Info: SIEMENS BFR 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code |
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900mhzq62702-f1314ot-23junctio30+4 | |
RXTNB 2Contextual Info: PXB 4220 SIEM ENS 1 1.1 1.2 1.3 1.4 1.5 1.6 O v e rv ie w .7 Features. 9 |
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6235b05rxtnb 2 | |
WM 53BContextual Info: SIEM ENS PNP Silicon AF Transistors • • • • BC 636 . BC 640 High current gain High collector current Low collector-emitter saturation voltage Complementary types: BC 635, BC 637, BC 639 NPN Type Marking BC 636 BC 638 BC 640 Ordering Code Q68000-A3365 |
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q68000-a3365q68000-a3366q68000-a3367ehp00204+7 | |
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Contextual Info: 3 I C I V I C n i3 Memory Sync Controller III SDA 9220-5 Preliminary Data MOS 1C Features • • • • • • Large area flicker elimination through field doubling Additional elimination of interline flicker in field mode Field switching and selection in field mode |
OCR Scan |
q67100-h5087p-lcc-44-1fl235b05fl23sfc+1 | |
Tf250C
Abstract: 10FCRL BTS917 GPT05165 GPT059D4 Q67060-S6700-A2 Q67060-S6700-A3 Q67060-S6700-A4 smd 4n
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6535b05tf250c10fcrlbts917+6 |