BBS3331 Search Results

Contextual Info: Philips Semiconductors bbS3331 0032361 S4b • APX »*«*««*specification BGY580;BGY581 CATV amplifier modules N AP1ER PHILIPS/DISCRETE FEATURES PINNING - SOT115C • Excellent linearity • Extremely low noise PIN PIN CONFIGURATION DESCRIPTION 1 input • Silicon nitride passivation

Contextual Info: *OT » * 1990 Philips Com ponents D a te s h e e t s ta tu s P re lim in a ry s p e c ific a tio n d a te o f is s u e O c to b e r 1d 90 FEATURES • Short channel transistor with high ratio [YfelTCia. • Low noise gain controlled amplifier to 1 GHz. BF988

Contextual Info: N AMER PHILIPS/DISCRETE b^E D • b b S S ^ l DD2b43fl T17 IAPX BB911 l VHF VARIABLE CAPACITANCE DIODE The BB911 is a VHF variable capacitance diode in planar technology with a very high capacitance ratio intended for VHF-band A up to 160 MHz in all-band tuners.

Contextual Info: P h ilip s S em icon ducto rs P relim inary sp e cifica tio n S ilicon ep itaxial-b ase tran sistors QUICK REFERENCE DATA MIN. CONOTTIONS BD433 PINNING - TO-126 SOT32 DESCRIPTION PARAMETER collector-emitter voltage Veto MAX. UNIT SYMBOL Yces if n DESCRIPTION

Contextual Info: it N AFTER PHILIPS/DISCRETE 2SE I> bb53T31 001A7S1 3 • BUS23 SERIES T - 2 3 -'IS' SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in aTO-3 envelope, intended fo r use in converters, inverters, switching regulators, motor control systems etc.

transistor 667

Contextual Info: ^^53^31 0035133 404 APX Philips S em iconductors Product specification N AHER PHILIPS/DISCRETE NPN 6 GHz wideband transistor FEATURES • L7E 1 e BFR93A PINNING PIN High power gain DESCRIPTION • Low noise figure • Very low intermodulation distortion 2

Contextual Info: I b^E ]> • bbSBSBl 0027524 2T0 I BC327 BC327A BC328 APX N AMER PHILIPS/DISCRETE _ y SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in plastic TO-92 envelopes, primarily intended fo r use in driver and output stages of audio amplifiers.

BD 669

Contextual Info: BDV66A; B BDV66C; D DARLINGTON POWER TRANSISTORS P-N-P epitaxial base Darlington transistors for audio output stages and general am plifier and switching applications. N-P-N complements are B D V 6 7 A ; B; C and D. Matched complementary pairs can be supplied.

bd234

Contextual Info: BD234; BD236; BD238 _ _ y v SILICON EPITAXIAL-BASE POWER TRANSISTORS P-N-P transistors in a SOT-32 plastic envelope intended for use in television and audio amplifier circuits where high peak powers can occur. N-P-N complements are BD233,

BD203

Abstract: bdx77
Contextual Info: BD201 BD203 BDX77 _ / v _ SILICON EPITAXIAL-BASE POWER TRANSISTORS NPN transistors in a plastic envelope. With their PNP complements BD202, BD204 and B D X78 they are primarily intended for use in hi-fi equipment delivering an output of 15 to 25 W into a 412 or

Contextual Info: b7E D • bb53=i31 D0E3R3S 04D H A P X BST70A N AMER PHILIPS/DISCRETE y v N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers.

Contextual Info: bRE D N AMER PH ILIP S /D IS C R E TE • bb53R31 00304bQ Rlfl ■ P hilips Sem ico nd uctors Pro d uct Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: N AMER PHILIPS/DISCRETE b'lE D b b S B ' m DDETBflD DM2 * A P X BLW77 J V . H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear am­

Contextual Info: BF966S _ J v _ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected, intended fo r u.h.f. applications in television tuners and professional communication equipment.

bot64

Contextual Info: BDT64F; BDT64AF BDT64BF; BDT64CF J SILICON DARLINGTON POWER TRANSISTORS PNP Silicon Darlington power transistors in a S 0 T 1 8 6 envelope with an electrically insulated mounting base. The devices are designed for audio output stages and general amplifier and switching applications.

Contextual Info: nu. . 0 . J Philips Semiconductors • ^53=131 0 0 2 ^ 2 3 21b « A P X " n AMER PHILIPS/DISCRETE NPN 7 GHz wideband transistor DESCRIPTION Product specification L7E T> BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband

Contextual Info: N AMER PHILIPS/DISCRETE ObE D bbS3T31^ DQ113T1 E • | BYV43_SERIES T-03-19 ' SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES High-efficiency schottky-barrier double rectifier diodes in plastic envelopes, featuring low forward voltage drop, low capacitance and absence of stored charge. They are intended fo r use in switchedmode power supplies and high-frequency circuits in general, where both low conduction losses and zero

Contextual Info: N AMER PHILIPS/DISCRETE bbS3^31 P D E ^ m b DEfl BLWbU b^E » APX U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range fo r nominal supply voltages up to 13,5 V.

k4368

Contextual Info: N AMFR P H IL IP S /D IS C R E T E b'lE D • b b S B 'm 0 0 3 0 4 7 Q flb? « A P X Product Specification Philips Semiconductors B U K436-800A/B Pow erM O S transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope.

MRC223

Contextual Info: Philips Semiconductors • bb53T31 0023547 'Ifll B A P X Product specification N-channel enhancement mode vertical D-MOS transistor BSP130 b7E D -JT a HER PHILIPS/DISCRETE FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL,

Contextual Info: bTE ]> N AMER P H IL IP S/ DI SC R ET E • bbS3T31 00 30 4 b 5 Product Specification Philips Semiconductors B U K436-200A/B Pow erM O S transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: ^ 5 3 ^ 3 1 002b314 bTE N AMER PHILIPS/DISCRETE APX b3E BAV45 D _ S PICOAMPERE DIODE Silicon diode in a metal envelope. It has an extremely low leakage current over a wide temperature range combined with a low capacitance and is not sensitive to light. It is intended for clamping,

Contextual Info: ^53=131 001A775 b • DEVELOPMENT DATA BUS132 SERIES This data sheet contains advance information and specifications are subject to change without notice. . T*- 3 3 - / 3 N AMER PHILIPS/] IS CRETE 2SE D SILICON DIFFUSED POWER TRANSISTORS High-voltage, glass-passivated power transistors in TO-3 envelope, intended for use in very fast