BD201 Search Results

BD201F

Abstract: BDX77F BD203F BD202F BD204F BDX78F
Contextual Info: J PHILIPS INTERNATIONAL SbE D • BD201F; BD203F; BDX77F 7110a2b 0Gl+2ÛDfi Ô4S ■ PHIN T - 3 3 ' O cf SILICON EPITAXIAL POWER TRANSISTORS NPN Silicon power transistors in a SO T186 envelope w ith an electrically insulated mounting base. PNP complements are B D 202F, BD204F and B D X 78F .

BD202

Abstract: BDX77 BD201 BD203 BD204 BDX78
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package BD202, BD204, BDX78 BD202, BD204, BDX78 PNP PLASTIC POWER TRANSISTORS Complementary BD201, BD203 and BDX77 Medium Power Switching and Amplifier Applications

BD203

Contextual Info: BD201 BD203 BDX77 PHILIPS INTERNATIONAL SbE D • D D 4 S 7 T Ö D7b ■ PHIN 711002b T-33 ■ a SILICO N EPITAXIAL-BASE POW ER T R A N SIST O R S N P N transistors in a plastic envelope. W ith their P N P com plem ents B D 2 0 2 , B D 2 0 4 and B D X 7 8 they

Contextual Info: BD202F; BD204F BDX78F PHILIPS in t e r n a t io n a l SbE ]> • 7110fl2t 0042fl5b flbO M P H I N T-33-17 SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors in SOT186 envelopes with an electrically insulated mounting base. NPN complements are BD201F, BD203F and BDX77F respectively.

BD201F

Abstract: BD203F BD202 BD201
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD201F/203F DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO = 45V(Min)- BD201F 60V(Min)- BD203F ·Complement to Type BD202F/204F APPLICATIONS ·Designed for use in hi-fi equipment delivering an output

S293

Abstract: BDX71 BD201 BD201F BD202F BD203F BD204F BDX77F BDX78F q342
Contextual Info: BD201F; BD203F; BDX77F SILICON EPITAXIAL POWER TRANSISTORS NPN Silicon power transistors in a SOT186 envelope with an electrically insulated mounting base. PNP complements are BD202F, BD204F and BDX78F. QUICK REFERENCE DATA BD201F BD203F BDX77F Collector-base voltage

BD203

Abstract: BD204 UD203 bd202a BD20 BD201
Contextual Info: SEMELAB 1 2 3 4 5 - 1E Al 6 S (cQ > ~ S 1 G SEMELAB BD201 BD203 N-P-N S IL IC O N E P IT A X IA L -B A S E A.F. P O W E R T R A N S IS T O R S N - F 'N silicon epitaxial-base power tr a n s is io i s in n plaint. envelope. Wi»h t h i n p - n - p compl eme nts 00202 and BD204 they a r e p r i m n r i U intended for use in hi ii

BD202 philips

Abstract: bd204 Z624 BDX78 saf* philips bd202
Contextual Info: BD202 BD204 BDX78 PHILIPS INTERNATIONAL SbE D • 711002b 004Sôlb Til H P H I N T - J 3 - 2 ./ SILICON EPITAXIAL-BASE POWER TRANSISTORS PNP transistors in a plastic envelope. With their npn complements BD201, BD203, and BDX77,they are primarily intended for use in hi-fi equipment delivering an output of 15 to 25 W into a 4 Î2 or

BD204

Abstract: BD202 BD203 BD203 npn BD201
Contextual Info: PNP BD202 – BD204 NPN BD201 – BD203 SILCON EPITAXIAL-BASE POWER TRANSITORS The BD202 and BD204 are PNP transistors mounted in Jedec TO-220 plastic package. They are primarily intended for use in if-hi equipment delivering an output of 15 to 25 W into 4Ω or

BD201

Abstract: ic 204 BD202 BD203 BD204 BDX77 BDX78
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package BD202, BD204, BDX78 BD202, BD204, BDX78 PNP PLASTIC POWER TRANSISTORS Complementary BD201, BD203 and BDX77

bd202

Abstract: bdx78
Contextual Info: BD202, BD204, BDX78 CDU BD202, BD204, BDX78 PNP PLASTIC POWER TRANSISTORS Complementary BD201, BD203 and BDX77 Medium Power Switching and Amplifier Applications DIM A B * C D E F G H J r K L ° —J g ¿JL u M N MIN MAX 14.42 9,63 16.51 10.67 3,56 4.83 0,90

BD203

Abstract: bdx77
Contextual Info: BD201 BD203 BDX77 _ / v _ SILICON EPITAXIAL-BASE POWER TRANSISTORS NPN transistors in a plastic envelope. With their PNP complements BD202, BD204 and B D X78 they are primarily intended for use in hi-fi equipment delivering an output of 15 to 25 W into a 412 or

Contextual Info: _/ V _ BD202 BD204 BDX78 SILICON EPITAXIAL-BASE POWER TRANSISTORS PNP transistors in a plastic envelope. With their npn complements BD201, BD203, and BDX77,they are primarily intended for use in hi-fi equipment delivering an output of 15 to 25 W into a 4 f l or

BDx77

Abstract: BD203 npn BD201 BD202 BD203 BD204 BDX78 ic 324
Contextual Info: BD201, BD203, BDX77 BD201, BD203, BDX77 NPN PLASTIC POWER TRANSISTORS Complementary BD202, BD204 and BDX78 Medium Power Switching and Amplifier Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR DIM MIN MAX A 14.42 16.51 B 9.63 10.67

BDx77

Abstract: BD201 BD202 BD203 BD204 BDX78
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package BD201, BD203, BDX77 BD201, BD203, BDX77 NPN PLASTIC POWER TRANSISTORS Complementary BD202, BD204 and BDX78

BDX78

Abstract: BD201 BD203 BD203 npn BDx77 box77 BD202 BD204
Contextual Info: BD201 BD203 BDX77 SILICON EPITAXIAL-BASE POWER TRANSISTORS IMPN transistors in a plastic envelope. W ith their PNP complements BD202, BD204 and BDX78 they are prim arily intended fo r use in hi-fi equipment delivering an o u tp u t of 15 to 25 W into a 4 Î2 or

BD203F

Abstract: BD201F BD202F BD204F BDX77F BDX78F
Contextual Info: BD202F; BD204F BDX78F SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors in SOT186 envelopes w ith an electrically insulated mounting base. NPN complements are BD201F, BD203F and BDX77F respectively. Q UICK REFERENCE D A T A BD202F BD204F BDX78F

BD204

Abstract: BD202 BDX78 BD201 80204 BD203 BDX77 IEC134
Contextual Info: BD202 BD204 BDX78 -/V . SILICON EPITAXIAL-BASE POWER TRANSISTORS PNP transistors in a plastic envelope. With their npn complements BD201, BD203, and BDX77,they are primarily intended for use in hi-fi equipment delivering an output of 15 to 25 W into a 4 Î Ï or

BD201

Abstract: UD203 BD203
Contextual Info: SEMELAQ I 2 3 i 5 “ lg A 6 2 PIO-5 2 Ö SEMELAB BD201 BD203 N-P-N SILICON EPITAXIAL-BASE A.F. POW ER TRANSISTORS N - r- N s ilic o n e p it a x ia l-bnsc po\ser t r a n s is t o is in a p ln s ru envelo pe W i 'h t h u t p-n-p co m p le m e n ts IÎD 202 and |JD2(M they a r e p r im a r ils intended fo r use »n h» fi

mmbd2010

Abstract: MMBD3010 MMBD201 marking DP sot-323 MMBD2010T1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M M BD1010LT1 M M BD201O T1 M M B D 3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy-conserving traits. This switching diode has the following features: • Very Low Leakage < 500 pA promotes extended battery life by decreas­

BDX77

Contextual Info: BD201, BD203, BDX77 BD201, BD203, BDX77 NPN PLASTIC POWER TRANSISTORS Complementary BD202, BD204 and BDX78 Medium Power Switching and Amplifier Applications MIN MAX 14.42 9,63 3,56 16,51 10.67 4,83 0,90 1,40 3,88 DIM A B C D E F G H J K L M N - 1,15 3,75 2,29

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package BD201, BD203, BDX77 BD201, BD203, BDX77 NPN PLASTIC POWER TRANSISTORS Complementary BD202, BD204 and BDX78 Medium Power Switching and Amplifier Applications

BD201

Abstract: BD203 BD203 npn transistor bd202 bd202
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD201/203 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO = 45V(Min)- BD201 60V(Min)- BD203 ·Complement to Type BD202/204 APPLICATIONS ·Designed for use in hi-fi equipment delivering an output

BD204

Abstract: box78 BD202 BDX78 philips BDX77 BDX78 BD201 BD203 bd202 philips
Contextual Info: BD 202 BD204 BDX78 PHILIPS INTERNATIONAL 5LE D • 711DflEb 0D4EÔ1L. TIL BIPHIN T - J3 - Z - / SILICON EPITAXIAL-BASE PO W ER TRANSISTORS PNP transistors in a plastic envelope. With their npn complements BD201, BD203, and BDX77,they are primarily intended for use in hi-fi equipment delivering an output of 15 to 25 W into a 4 Î Î or