BD201 Search Results

BD203

Abstract: bdx77
Contextual Info: BD201 BD203 BDX77 _ / v _ SILICON EPITAXIAL-BASE POWER TRANSISTORS NPN transistors in a plastic envelope. With their PNP complements BD202, BD204 and B D X78 they are primarily intended for use in hi-fi equipment delivering an output of 15 to 25 W into a 412 or

Contextual Info: _/ V _ BD202 BD204 BDX78 SILICON EPITAXIAL-BASE POWER TRANSISTORS PNP transistors in a plastic envelope. With their npn complements BD201, BD203, and BDX77,they are primarily intended for use in hi-fi equipment delivering an output of 15 to 25 W into a 4 f l or

BDx77

Abstract: BD203 npn BD201 BD202 BD203 BD204 BDX78 ic 324
Contextual Info: BD201, BD203, BDX77 BD201, BD203, BDX77 NPN PLASTIC POWER TRANSISTORS Complementary BD202, BD204 and BDX78 Medium Power Switching and Amplifier Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR DIM MIN MAX A 14.42 16.51 B 9.63 10.67

BD203

Abstract: BD201 BD204 BD202 BD203 npn NPN pnp MATCHED PAIRS IC03 Ratings vce-20
Contextual Info: NPN BD201 – BD203 PNP BD202 – BD204 SILCON EPITAXIAL-BASE POWER TRANSISTORS The BD201 and BD203 are NPN transistors mounted in Jedec TO-220 plastic package. They are primarily intended for use in if-hi equipment delivering an output of 15 to 25 W into 4Ω or

BDx77

Abstract: BD201 BD202 BD203 BD204 BDX78
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package BD201, BD203, BDX77 BD201, BD203, BDX77 NPN PLASTIC POWER TRANSISTORS Complementary BD202, BD204 and BDX78

BDX78

Abstract: BD201 BD203 BD203 npn BDx77 box77 BD202 BD204
Contextual Info: BD201 BD203 BDX77 SILICON EPITAXIAL-BASE POWER TRANSISTORS IMPN transistors in a plastic envelope. W ith their PNP complements BD202, BD204 and BDX78 they are prim arily intended fo r use in hi-fi equipment delivering an o u tp u t of 15 to 25 W into a 4 Î2 or

BD203F

Abstract: BD201F BD202F BD204F BDX77F BDX78F
Contextual Info: BD202F; BD204F BDX78F SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors in SOT186 envelopes w ith an electrically insulated mounting base. NPN complements are BD201F, BD203F and BDX77F respectively. Q UICK REFERENCE D A T A BD202F BD204F BDX78F

BD204

Abstract: BD202 BDX78 BD201 80204 BD203 BDX77 IEC134
Contextual Info: BD202 BD204 BDX78 -/V . SILICON EPITAXIAL-BASE POWER TRANSISTORS PNP transistors in a plastic envelope. With their npn complements BD201, BD203, and BDX77,they are primarily intended for use in hi-fi equipment delivering an output of 15 to 25 W into a 4 Î Ï or

BD201

Abstract: UD203 BD203
Contextual Info: SEMELAQ I 2 3 i 5 “ lg A 6 2 PIO-5 2 Ö SEMELAB BD201 BD203 N-P-N SILICON EPITAXIAL-BASE A.F. POW ER TRANSISTORS N - r- N s ilic o n e p it a x ia l-bnsc po\ser t r a n s is t o is in a p ln s ru envelo pe W i 'h t h u t p-n-p co m p le m e n ts IÎD 202 and |JD2(M they a r e p r im a r ils intended fo r use »n h» fi

mmbd2010

Abstract: MMBD3010 MMBD201 marking DP sot-323 MMBD2010T1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M M BD1010LT1 M M BD201O T1 M M B D 3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy-conserving traits. This switching diode has the following features: • Very Low Leakage < 500 pA promotes extended battery life by decreas­

BDX77

Contextual Info: BD201, BD203, BDX77 BD201, BD203, BDX77 NPN PLASTIC POWER TRANSISTORS Complementary BD202, BD204 and BDX78 Medium Power Switching and Amplifier Applications MIN MAX 14.42 9,63 3,56 16,51 10.67 4,83 0,90 1,40 3,88 DIM A B C D E F G H J K L M N - 1,15 3,75 2,29

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package BD201, BD203, BDX77 BD201, BD203, BDX77 NPN PLASTIC POWER TRANSISTORS Complementary BD202, BD204 and BDX78 Medium Power Switching and Amplifier Applications

BD201

Abstract: BD203 BD203 npn transistor bd202 bd202
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD201/203 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO = 45V(Min)- BD201 60V(Min)- BD203 ·Complement to Type BD202/204 APPLICATIONS ·Designed for use in hi-fi equipment delivering an output

BD204

Abstract: box78 BD202 BDX78 philips BDX77 BDX78 BD201 BD203 bd202 philips
Contextual Info: BD 202 BD204 BDX78 PHILIPS INTERNATIONAL 5LE D • 711DflEb 0D4EÔ1L. TIL BIPHIN T - J3 - Z - / SILICON EPITAXIAL-BASE PO W ER TRANSISTORS PNP transistors in a plastic envelope. With their npn complements BD201, BD203, and BDX77,they are primarily intended for use in hi-fi equipment delivering an output of 15 to 25 W into a 4 Î Î or

BD201

Abstract: BD202 BD204 BDx77 BDX78 BD203
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package BD201, BD203, BDX77 BD201, BD203, BDX77 NPN PLASTIC POWER TRANSISTORS Complementary BD202, BD204 and BDX78 Medium Power Switching and Amplifier Applications

BU202

Abstract: BD202 BD201 BD204 BD203 fa10j10
Contextual Info: MAGNA 2F¡o -Lf-52 mí TSHH % 3 BD202 BD204 SILICON EPITAXIAL-BASE POWER TRANSISTORS P-N-P transistors in a plastic envelope. W ith their n-p-n complements BD201 and BD 203 they are prim arily intended fo r use in h i-fi equipm ent delivering an o u tp u t o f 15 to 25 W in to a 4 i2 or 8 i2 load.

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package BD202, BD204, BDX78 BD202, BD204, BDX78 PNP PLASTIC POWER TRANSISTORS Complementary BD201, BD203 and BDX77 Medium Power Switching and Amplifier Applications

BD203

Abstract: BD201 BDx77 T-33-11 BD202 BD203 npn BD204 BDX78
Contextual Info: BD201 B D 203 BDX77 PHILIPS INTERNATIONAL SbE D m VllüöEb □D4S7TÖ 07b I PHIN r-33 SILICON EPITAXIAL-BASE POWER TRANSISTORS NPN transistors in a plastic envelope. W ith th e ir PNP complements BD202, BD204 and BDX78 they are prim arily intended fo r use in hi-fi equipment delivering an o u tp u t o f 15 to 25 W in to a 4 £2 or

BD 201F

Contextual Info: BD201F; BD203F; BDX77F PHILIPS INTERNATIONAL SbE D • 711002b 0042Û0Ô AMS ■ PHIN T '3 3 - O ^ SILICON EPITAXIAL POWER TRANSISTORS NPN Silicon power transistors in a SO T186 envelope w ith an electrically insulated mounting base. PNP complements are B D 202F, BD204F and B D X 78F .

Contextual Info: J V BD202F; BD204F BDX78F SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors in SOT186 envelopes with an electrically insulated mounting base. NPN complements are BD201F, BD203F and B D X 7 7 F respectively. Q U IC K R E F E R E N C E D A T A

Bdx77

Contextual Info: BD201, BD203, BDX77 BD201, BD203, BDX77 NPN PLASTIC POWER TRANSISTORS Complementary BD202, BD204 and BDX78 Medium Power Switching and Amplifier Applications DIM A B C D E F G H J K L M N MIN MAX 16.51 10.67 4.83 0.90 1.15 1.40 3.75 3,88 2.29 2.79 2.54 3.43

BD203-BD204

Abstract: BD201 RCA-BD201 17521 rca BD202 BD203 BD204 0017525 BD203 npn
Contextual Info: ÏÏÏ 38750816 E SOLID STATE Pro Electron Power Transistors DE~J 3 Ô 7 S 0 Û 1 G D 1 7 S B 1 □ 01E 17521 D^ - BD201, BD202, BD203, BD204 File Num ber

MMBD201

Abstract: BD201 bd2010 BD301 MMBD2010 318D-03 MMBD101 MMBD2010T1 DIODE WJ SOt23 MMBD3010T1
Contextual Info: MOTOROLA SEMICONDUCTOR — TECHNICAL Order this document bv MMBDIOIOLT1/D DATA MMBDIOIOLTI BD2010T~ Switching Diode Pad of the GreenMneTM Portfolio of devices with energy+onsewing traits. This switching diode has the following features: Very Low Leakage s 500 PA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair

DK53

Abstract: dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513
Contextual Info: BIPOLAR TRANSISTORS CROSS REFERENCE Industry standard 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240