BAV45 Search Results

BAV45A

Contextual Info: N AMER PHILIPS/DISCRETE 2SE «D • bbSaTBl aaiblfi'l S ■ 'f'03-'0ct Small Signal Devices LOW LEAKAGE DIODES TYPE PKG BAV45A BAS45 TO-18 DO-34 Vr V 20 125 ¥ |r 50 225 5pA 1nA (m A l (S VF (V ) 1.00 0.80 Vr m 5 125 @ r If (m A> I 10 ■ 5 c <f - " 600

BAV45

Abstract: philips BAV45
Contextual Info: • ^ 53^31 002 b3 1 4 t>T2 N AMER P H I L I P S / D I S C R E T E ■ APX BAV45 bTE T> y PICOAMPERE DIODE Silicon diode in a metal envelope. It has an extremely low leakage current over a wide temperature range combined with a low capacitance and is not sensitive to light. It is intended for clamping,

BAV45

Abstract: MBG530 "Logarithmic Amplifiers" sot18 picoampere diode
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D153 BAV45 Picoampere diode Product specification Supersedes data of July 1986 File under Discrete Semiconductors, SC01 1996 Mar 13 Philips Semiconductors Product specification Picoampere diode BAV45 FEATURES

BAV45

Contextual Info: 5bE D TllD öSh GQ402Ö 1 4Ö3 • PHIN BAV45 » SbE 3> PHILIPS INTERNA TI O NA L T - 0 3 - 0 * 1 PICOAMPERE DIODE Silicon diode in a metal envelope. It has an extremely low leakage current over a wide temperature range combined with a low capacitance and is not sensitive to light. It is intended for clamping,

BAV45

Abstract: diode led ir PA 10 Diode
Contextual Info: BAV45 SILICON PICOAMPERE DIODE TO-18 CASE TWO LEADED DESCRIPTION The CENTRAL SEMICONDUCTOR BAV45 type is a Silicon Picoampere Diode, mounted in a hermetically sealed metal case, designed for extremely low leakage applications. MAXIMUM RATINGS (TA=25°C)

Contextual Info: BAV45 w w w. c e n t r a l s e m i . c o m SILICON PICOAMPERE DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR BAV45 is a silicon picoampere diode, mounted in a hermetically sealed metal case, designed for extremely low leakage applications. MARKING: FULL PART NUMBER

DO-34

Abstract: BA231 BAV45A BAT81 1N825A
Contextual Info: Small Signal Leaded Devices Detection Diode Diode Capacitance Type BA231 Pkg VR V If (mA) cd (pF) DO-35 50 200 1.2 @ VR (V) and VF (mV) f (MHz) 'F {(xA) 360-420 1 (w 10 Low Leakage Diodes •f (V) (mA) TO-18 DO-34 20 125 50 225 5pA 1nA •r @ u. BAV45,A

CV8805

Abstract: BY206 diode CV8308 SOD-18 BYX94 BY227 diode BY207 Diode 1N4007 DO-7 Rectifier Diode BYX10 diode BY227
Contextual Info: Diodes silicon picoampere diode book 1 part 3 and 4 BAV45 Description I frm m A < i Type No. E xtrem ely lo w leakage and lo w capacitance diode. O utline T O —18. Dwg. ref. A T 5 35 I r at V r 5 (pA ) 100 I r at V r 20 (pA ) max. lF (m A) (V ) Vf at I f

BAV45A

Abstract: do-34 DO-34 ZENER 1N827A 1N829 BAV45 Zener Diodes 6.2 V BYV10-30 BAS45 BAT81
Contextual Info: N AMER PHILIPS/DISCRETE 2SE «D • bbSSTSl OGltilô'i S ■ T ' 0 3 - ' 0 £f Small Signal Devices 11 LOW LEAKAGE DIODES TYPE PKG BAV45A BAS45 TO-18 DO-34 Vr V (m Ai ¥ IR 20 125 50 225 5pA 1nA Vp (V) 1.00 0.80 Vft @ m f 5 125 @ r Ip (rnAK I 1°5 • ■

Contextual Info: ^ 5 3 ^ 3 1 002b314 bTE N AMER PHILIPS/DISCRETE APX b3E BAV45 D _ S PICOAMPERE DIODE Silicon diode in a metal envelope. It has an extremely low leakage current over a wide temperature range combined with a low capacitance and is not sensitive to light. It is intended for clamping,

BAV45

Abstract: MBG530
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D153 BAV45 Picoampere diode Product specification Supersedes data of July 1986 1996 Mar 13 Philips Semiconductors Product specification Picoampere diode BAV45 FEATURES DESCRIPTION • Extremely low leakage current:

Contextual Info: , {Jnc. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Picoampere diode BAV45 FEATURES DESCRIPTION • Extremely low leakage current: max. 5 pA Silicon diode in a metal TO-18 can. It has an extremely low leakage current over

BAV45

Abstract: MBG530 J-10 MAM207
Contextual Info: Philips Semiconductors Product specification Picoampere diode BAV45 FEATURES DESCRIPTION • Extremely low leakage current: max. 5 pA Silicon diode in a metal TO -18 can. It has an extremely low leakage current over a wide temperature range combined with a low capacitance and is not sensitive

C5V6 ph

Abstract: C18 ph PH C5V1 philips diode PH 33D C8V2 PH C10 PH c4v7 ph c5v1ph c3v9ph C33PH
Contextual Info: MARKING CODES contents page Type number to marking code cross reference 2 Marking code to type number cross reference 21 Philips Semiconductors Small-signal and Medium-power Diodes Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

Contextual Info: PROCESS CPD65 Low Leakage Diode Picoampere Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11.8 x 11.8 MILS Die Thickness 8.0 MILS Anode Bonding Pad Area 2.35 MILS DIAMETER Top Side Metalization Al - 15,000Å Back Side Metalization Au - 18,000Å

bf0262a

Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Contextual Info: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A

BAS45A

Abstract: BAS45AL
Contextual Info: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal diodes LOW-LEAKAGE CURRENT DIODES ratings type number V rrm max. V Vr max. (V) 1 ' r 1> max. (nA) 125 125 1 4 125 75 20 75 75 75 1 5 0.01

RPY 86

Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Contextual Info: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

THERMISTORS nsp 037

Abstract: Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032
Contextual Info: INDEX OF COMPONENTS A Section/Page No. A.C. Adaptor. Adaptor Kits BNC e tc . Adhesive Tapes. Adhesives, Various. Aerosols.

OT239

Abstract: BT100a 02 CQX82A TRIO TA 80W CV7351 ZP1481 CV2154 ZP1430 triac mw 151 500r PL5727
Contextual Info: Milliard quick reference guide 1978/79 — discrete semiconductors — passive components — valves and tubes This guide gives quick reference data on Mullard electronic components. The information is deliberately abbreviated to give a rapid appreciation of salient characteristics, and to

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5