BA8E Search Results

2SD1417

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SD1417 INDUSTRIAL APPLICATIONS Unit in mm HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. FEATURES: . High DC Current Gain: h F E = 2 0 0 0 (Min.)(at V c e = 3V, Ic=3A) . Low Saturation Voltage: V q e (sat)=1-5V(Max.) (at Ic=3A)

Contextual Info: D I S P L A Y LED LIGHT BARS & BAR GRAPH ARRAYS Chip P a rt No. E m itte d Digit Size Common Common Anode Cathode Color Electro-optical A b s o lu te M a x im u m R atings D ata A t 10mA Drawing Peak Wave Iv T yp. Vf(V) Pd Peak No. L ength A A P e r Seg.

BU407

Abstract: BU406 1462, TRANSISTOR
Contextual Info: ÆàMOS PEC NPN POWER TRANSISTOR These devices are high voltage,high speed transistors for hor­ izontal deflection output stages of TV's and CTV"s circuits. NPN BU406 BU407 FEATURES: * Collector-Emitter Sustaining Voltage VCEV = 330 V Min. - BU407 = 400 V (M in.)-BU406

TP30C

Abstract: A 652 tip30c TIP29 TIP29A TIP29B TIP29C TIP30 TIP30A TIP30B
Contextual Info: ÆÂMOS PEC COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS NPN TIP29 TIP29A TIP29B TÍP29C . designed for use in genera! purpose power amplifier and switching applications. FEATURES: * Coilector-Emitter Sustaining Voltage V~,v._r 40V Min - TIP29.TIP30

DSP62

Abstract: AD14 BA-3H12UW
Contextual Info: LED Light Bar & Bar Graph Arrays Part No. Digit Size 15.0*15.0mm Light Bar Cylindrical 8.50 Light Bar 33.0*22.0mm Light Bar Triangular Light Bar Common Anode Common Cathode Peak Wave Length λ p nm GaAsP/Red 655 40 160 40 200 3.4 4.0 BA-8H7UW-2 GaP/ Bright Red

Contextual Info: LED LIGHT BAR & BAR GRAPH ARRAYS Part No. Digit Size Common Anode Common Cathode Absolute Maximum Ratings Chip Electro-optical Data At 10mA Drawing Peak Vf (v) Iv. Typ. 'O No. Wave Pd If Ifp Per. Seg. Length (nm) (mw) (mA) (mA) Typ. Max. (mcd) P(nm) Material/Emitted

Contextual Info: FE00 0002* 0!+,)&/!2)2.% %&0'0=40>0C7FAA0+,?> 9?0774209?0":94?:=492 #0&,470":@9?4920%:B0=0'@;740>  )&' 800000009000000B 09E1A00A 1A 000A4260 B0000000030000003 G00)94A0=>,7009;@? G00'3:=?04=.@4?0%=:?0.?4:90B4?30@?:0&0.:A0=D

KSP06

Abstract: KSP05
Contextual Info: KSP05/06 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emltter Voltage: VCEo = KSP05: 60V KSP06: 80V • Collector DlMlpatlon: Pc max =625mW TO -92 ABSOLUTE MAXIMUM RATINGS (T, =25#C) Characteristic Symbol C o lle cto r B ase Voltage

TTK SG 2368

Abstract: BV EI 303 3628 7 segment LD 1106 BS LM 6863 D I8253 yx 8018 0308 082c ez 422 BV EI 304 3083 0429 01 2701 00 RELE 12,8 mhz e 4895 lf
Contextual Info: AP-55A APPLICATION NOTE i n t e i A u g u s t 1979 S.A. Distributor E l e c t r o n ic \ \ B u il d in g E l e m e n t s p t y l t d PURVEYORS OF a l l ELECTRONIC COMWNENTS Tel eph on e 7 8 - 9 2 2 1 / 6 P O B o x 4 6 0 9 , Pretoria T e l e x 3 01 8 1 S A

Contextual Info: KSC1393 NPN EPITAXIAL SILICON TRANSISTOR TV VHF TUNER RF AMPLIFIER FORWARD AGC TO-92 • High Current Gain Bandwidth Product fr=700MHz (Typ) • Low Noise Figure NF=3.0dB (Max) at f*200MHz • Low Reverse Transfer Capacitance C RE=0.5pF (Max) ABSOLUTE MAXIMUM RATINGS (TA-25t:)

Contextual Info: KSC1674 NPN EPITAXIAL SILICON TRANSISTOR TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR TO-92 • High Current-Gain Bandwidth Product fT>600MHz Typ • High Power Gain Gpe=22dB at f= 100MHz ABSOLUTE MAXIMUM RATINGS (TA-2 5 t:) C haracteristic

Contextual Info: m N ER EK KS621240 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S tria te D S fl/HQtOfl Transistor Module 400 Amperes/1200 Volts O U TLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power

MG75H2YL1A

Abstract: A 222G
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG75H2YL1A HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current Gain: hpg=80 Min. (Iç=75A)

Contextual Info: INTERNATIONAL RECTIFIER IO R 73 D | MflSSMSa □0071ÖM i f T'-¿>/' 2'3 Data Sheet No. PD-2.134 In t e r n a t i o n a l , r e c t i f i e r R23D & R23DR SERIES 600 - 400 VOLTS RANGE 350 AMP AVG STUD MOUNTED DIFFUSED JUNCTION RECTIFIER DIODES VOLTAGE RATINGS

Contextual Info: BRIGHT LED ELECTRONICS CORP. SINCE 1981 BA-8E9UW Package Dimensions : Features : 1. Emitting area : 31.0x20.0 mm . 2. Low power requirement. 3. Excellent characters appearance. 4. Solid state reliability. 5. Categorized for luminous intensity. Description :

DSP62

Contextual Info: LED Light Bar & Bar Graph Arrays Part No. Digit Size 15.0*15.0mm Light Bar Cylindrical 8.50 Light Bar 33.0*22.0mm Light Bar Triangular Light Bar Common Anode Common Cathode Peak Wave Length λ p nm GaAsP/Red 655 40 160 40 200 3.4 4.0 BA-8H7UW-2 GaP/ Bright Red

Contextual Info: KST3906 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Ch a ra cteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

H11A520-H11A550

Abstract: H11A51 H11A5100 H11A520 H11A550 HUA550
Contextual Info: S OL I D STATE D1 DE I 3 Ö7 SDÖ1 0 0 1 ^ 4 7 Optoelectronic Specifications - T - m - s z Photon Coupled Isolator H11A520-H11A550 -H11A5100 Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor T h e G E Solid State H 11A520, H11A550 and H I 1A5100 consist o f a

d718d

Contextual Info: 123452667898ABCD8EF6B7 86DEA 123314567891A758BCD814E1F3D167D1F1C5A36 896616 BC !"F#$662%51&'6%F76 AA6!"F688987 123456 5 *23+*52) FF1 9 1 6 1 9633 1 4B 1 A5D7B3 1 8DD35AD 1 45678 1 5 1 3D 1 E5B 1 C5753 1 1

KSA545

Abstract: KSC853 LTAGE WALTA
Contextual Info: SAMSUNG SEMI C O NDU CT OR INC KSC853 11E | V lfcq ita O O Ob S S ? 3 | 'T - - 1 - f t NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER • Complement to KSA545 • High Collector-Bas* Voltage Vcso =70V • Collector Dissipation Pc =400mW ABSOLUTE MAXIMUM RATINGS Ta=25°C

BU406

Abstract: BU407 HI SPEED, HI CURRENT, TO-220, TRANSISTOR
Contextual Info: ÆàMOS PEC NPN POWER TRANSISTOR These devices are high voltage,high speed transistors for hor­ izontal deflection output stages of TV's and CTV"s circuits. NPN BU406 BU407 FEATURES: * Collector-Emitter Sustaining Voltage VCEV = 330 V Min. - BU407 = 400 V (M in.)-BU406

ica 700 Y

Abstract: transistor 16299
Contextual Info: TOSHIBA -CDISCRETE/OPTOÏ 9097250 TOSHIBA TO SH IBA TD DISCRETE/OPTO 1)1 ^ 0^7550 OOlbETt 3 DT-3 3 - 3 5 90D 16296 SEMICONDUCTOR TOSHIBA GTR MODULE TECHNICAL DATA MG400H1F L 1 SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.

MG75H6EL1

Contextual Info: MG75H6EL1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . The Collector is Isolated from Case. . 6 Darlington Transistors are Built-in to 1 Package. . With Built-in Free Wheeling Diode. . High DC Current Gain

Contextual Info: INTERNATIONAL RECTIFIER lOR j| 4055455 □□0720cï E | in t e r n a t io n a l, r e c t if i e r _ T — c/— 7^3 DataSheetNo.PD-2.139 R30D & R30DR S E R IE S 600 - 400 VOLTS R A N G E 485 A M P AVG S T U D M O U N T E D D IF F U SE D JU N C T IO N R E C T IF IE R D IO D E S