diode BA170
Abstract: BA170 BA170 diode ITT diode lsi BA170
Contextual Info: ITT SEMICOND/ INTERNETALL SÜE ]> • MbflS?!! GGOBTM? L3b M I S I BA170 'T-Ol-0‘1 Silicon Epitaxial Planar Diode for universal use in consumer electronic and for switching applications max. 1.9 0 T \ Cathode Mark m a x . 0 .5 2 <3 This diode is delivered taped.
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ba170do-35000274ftdiode ba170+3ba170 diodeitt diodelsi ba170
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1N626
Abstract: 1N658 DSAIH000251 1N661
Contextual Info: K C • IN T E R N A T IO N A L BKC 2000 Series 30E * D ■ 1171163 Max avg Rectified Current l0 (l0 ) Max Power Disslpation-(PQ) Forward Voltage Drop (VF) Volts mA mW Volts mA BA170 BAV17 BAV18 1N251 1N461A 1N462A 1N626 1N627 1N658 1N659 1N660 20 25 60
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do-35ba170bav17bav18+81n2511n461a1n462a1n6261n6271n658dsaih0002511n661
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1N626
Abstract: BA170 1N458 1N461A hep silicon diode 1N251 1N462A 1N627 BAV17 BAV18
Contextual Info: 0 K C INTERNATIONAL • 30E D ■ 1171163 0000302 1 ■ " p BKC 2000 Series * General Purpose Silicon Diodes in DO-35 Package ■ ■ ■ ■ P eak Inverse VoHage PIV Max avg Rectified Current (l0 ) (l0 ) Max Power Disslpation-(PQ) Forward Voltage Drop (VF)
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u711md0b0302do-35ba170+9bav17bav181n2511n461a1n462a1n6261n458hep silicon diode1n627
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1K60
Abstract: 1K34A Diode Equivalent 1N87 Diode Equivalent 1N34A FDH444 1N270 diode equivalent equivalent components of diode 1N34A 1n3469 1N996 1N645
Contextual Info: Other Diodes Part No. CrossReference Operating Temperature: -65o C to 160 o C Power Dissipation Max. Avg. Rect. Current Peak Voltage Continuous Rev. Current Forward Voltage Max. Reverse Recovery Time Package Pd mW Io(mA) VRRM (V) IR (nA)@VR (v) V F (V)@IF (mA)
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ba170bav17bav18bav19+15bav20bav21bax16bay71bay801n6451k601k34adiode equivalent 1n87diode equivalent 1n34afdh4441n270 diode equivalentequivalent components of diode 1n34a1n34691n996
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in5282
Abstract: bax13 1N3064 1N3600 1N4009 1N4148 1N4149 1N914 J 1N4151 1N914B
Contextual Info: SWITCHING DIODES, GLASS PACKAGE Continuous liiS il! N um ber a m W Vi„IVqH s> C a p a c ita n ce R e v e r s e C. R e c o v e ry PatKaga Time Quantities Maximum Forw ard Voltage Drop Pow er Dissipation l É s i s g f í í i, in A) V (V o lts) V (V o lt 1 1 (mA|
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1n9141n914a1n914b1n916+101n916a1n916b1n30641n36001n40091n4148in5282bax131n4149j 1n4151
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diode BA170
Abstract: 1N4009 bax13 diode 1n4009 BA170 1N4376 1N3600 1N4148 1N914 1N914A
Contextual Info: I n t e r n a t/ o n a l S e m ic o n d u c t o r , I n c . 1N914 GENERAL PURPOSE SWITCHING DIODES And Other Signal Diodes DIFFUSED SILICON PLANAR f IS I P a rt Number 1N 914 1N914A 1N914B Max Power Dissipation Peak Note 1 Voltage P D (m W ) 250 Continuous
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1n9141n914a1n914b1n916+111n916a1n916b1n30641n36001n4009diode ba170bax13diode 1n4009ba1701n43761n4148
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WG713
Abstract: 1n4148 ITT ITT3002 1N914 ITT BA170 BA201 BAV17 BAV18 BAV19 BAV20
Contextual Info: SILICON DIODES I T T Û7 SEMICONDU CTORS dË T | 4^04^55 000232b 4 | ' General Purpose and Switching Diodes in DO-35 Package Type Peak Inv. Voltage PIV Max. Aver, Power Junction Rectified Dissipation Tempera Current l0 at25°C ture Tj Forward Voltage Drop Vf
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000232bdo-35tempera-at25ba170+11ba201bav17bav18100fitojbbav191n4449wg7131n4148 ittitt30021n914 ittbav20
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CECC 50001
Abstract: BAV21 CECC WG713 1N45BA 1N483A Diode BA170 BA201 BAV17 BAV18 BAV19
Contextual Info: General Purpose and Switching Diodes in DO-35 Package Type Peak Inv. Voltage PIV Junction Forward Max. Aver, Power Rectified Dissipation Tempera• Voltage ture Tf Current l0 at25°C Drop Vf Reverse Current lR at lF Reverse RecoveryTime atv„ Volts mA max.mW max.°C
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do-35tempera-at25ba170ba201+11bav17bav18100fitojbbav19100qtobav20cecc 50001bav21 ceccwg7131n45ba1n483a diode
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1n4148 D035
Abstract: BE110 1N4449 replace 1N4448 BF113 1n3600 die 1N4150 DIE
Contextual Info: S ilicon D iodes Silicon Sw itching D iodes for C o m p u ter A pplications in D O -35 & LL-34/35 Packages Peak Inverse V olta g e ÍM IN . PIV) Type Volts M axim um A verag e R ectified C u rre n t M axim um P ow er D issipation @ 25: C (W mA M axim um
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ll-34/351n41561n41571n4829+111n4830mpd200mpd300do-351n4148 d035be1101n4449replace 1n4448bf1131n3600 die1n4150 die
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FD6666 diode
Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5
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a4/10a5/62a5/105a1000+16aa100aa110aa111aa112aa113aa114fd6666 diodediode by1001n4q07ba100 diodeby164bb139bay38diode aa1191s184 diode1n82
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BA100 diode
Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Contextual Info: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any
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a4/10a5/62a5/105a1000+16aa100aa110aa111aa112aa113aa114ba100 diodeba102aay20b2m1-51n2528ph1021oa210 diodediode aa116bb105gaz17
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3TE445
Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Contextual Info: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group
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fjj141/a2305dfjj181/a2305e/848+16fjj191/afjl101/acd2306dfjy101/a2306e/832cd2307/9443te4452n3303ecc88taa*310b9d transistorbyy32gex36/7ferranti zs706ej73n159
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11ta0a12a025aa0290u0u55+16a0291a0292a0305a0306a0a56a0a59aeg diode si 61 laeg diodes d6sgs transistorsbc23bsiliconix u315mz306by126bcv59ac1282n3680
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TCA700Y equivalent
Abstract: SAJ300R SAF1092 SAK215 n525 by133 tca700y itt zener diode zpd ITT INTERMETALL BC327-25
Contextual Info: Pages Contents 2 and 3 List of Types 4 to 7 DIGIT2000 Digital TV System 8 to 21 ICs for TV and Radio Receivers 22 ICs for Telephone Applications 23 ICs for Electronic Clocks 24 and 25 ICs for Automobile Applications 26 ICs for other Applications 27 Voltage Stabilizers
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digit2000237thyu-61000tca700y equivalent+9saj300rsaf1092sak215n525by133tca700yitt zener diode zpditt intermetallbc327-25
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APY12
Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP
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edition-1978ausgabe-1978bs3934so-26+12ot-114ns371apy12byy32ac176aey26bav77bby20bd545bbav27transistor kt 209 maf367
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