BLS3T31 Search Results

BUW86

Abstract: BUW87 BUW87A TO3 philips BuW8
Contextual Info: BUW86 BUW87 BUW87A DEVELOPMENT DATA This data sheet contains advance Info rm a tio n and specifications are subject to change w ith o u t notice. bLS3T31 G 0 n 0 1 3 5 N AMER PHILIPS/DISCRETE r ESE D - 3 3 - / / SILICON DIFFUSED POWER TRANSISTORS High-speed switching npn transistors in a metal envelope intended fo r use in converters, inverters,

BGY22

Contextual Info: i , _ N AKER P H I L I P S / D I S C R E T E ObFl SFbbS3T31 0Di3534 T-74-09^01 BGY23 BGY23A _ / V U.H.F. POWER AMPLIFIER MODULES Broadband amplifier modules primarily designed for mobile applications operating directly from 12 V

Contextual Info: N AtfER PHJLIPS/DISCRETE APX bbS3^31 D03TD32 b47 b'lE ]> BLV38 A VHF LINEAR PUSH-PULL POW ER TRANSISTOR Push-pull npn silicon planar epitaxial transistor prim arily intended fo r use in linear VH F television transmitters vision or sound amplifiers . Features

7Z24132

Contextual Info: I N AflER P H I L I P S / D I S C R E T E developm ent ObE D bb53T31 0015147 b • data PZ2327B15U T his data sheet contains advance Inform ation and specifications are subject to change w ithout notice. T -c 3 % - o * f M ICRO W AVE P O W E R T R A N SIST O R

bt 44a

Abstract: 12945 WE VQE 11 E WE VQE 23 F WE VQE 24 E P041 P043A TI210 331 Optocoupler
Contextual Info: P040/44A _ OPTOCOUPLEh I » Optically coupled isolator consisting of an infrared emitting GaAIAs diode and a silicon npn photo­ transistor with accessible base in a SOT90B envelope. Designed for low input current and long life operation.

stb 1277 TRANSISTOR equivalent

Abstract: MSC 1691 transistor 1201 1203 1205 B3c1 RF NPN POWER TRANSISTOR C 10-12 GHZ BFS505 FC 0137 transistor Bf 966 msc 1697 transistor bf 979
Contextual Info: Philips Sem iconductors b L S B IB l N A tlE R 0 0 B 5 2 clL i T tiT IH A P X P H IL IP S /D IS C R E T E Product specification b?E D NPN 9 GHz wideband transistor BFS505 PIN CONFIGURATION PINNING FEATURES PIN DESCRIPTION • Low current consumption • High power gain

BUZ50C

Abstract: T0220AB
Contextual Info: PowerMQS transistor N AUER PHILIPS/DISCRETE BUZ50C OLE D • [^53^31 0014570 1 ■ " T -3 1 -1 1 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

CNX62

Abstract: BS415 DDS1015
Contextual Info: N AMER PHILIPS/DISCRETE 2SE D • b b S S ^ l GOHIQÜ? .1 ■ CNX62 T - H l - S Z HIGH-VOLTAGE OPTOCOUPLER The CNX62 is an optocoupler consisting of an infrared emitting GaAs diode and a silicon npn phototransistor in a dual-in-line DIL plastic envelope. The base is not connected.

Contextual Info: DEVELOPMENT DATA BYV74F SERIES This data sheet contains advance information and specifications are subject to change w ithout notice. N AMER PHILIPS/DISCRETE 2SE D 0022L41 5 • ULTRA FAST-RECOVERY ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES — 0 2 -1 * }

Contextual Info: N AMER PHILIPS/DISCRETE bb53T31 0011553 7 ObE » BYV19 SERIES T-03-17 SCHOTTKY-BARRIER RECTIFIER DIODES High-efficiency schottky-barrier rectifier diodes in TO-220AC plastic envelopes, featuring low forward voltage drop, low capacitance, absence of stored charge, and high temperature stability. They are

BY260

Abstract: BY260-200
Contextual Info: N ANER P H I L I P S / D I S C R E T E MAINTENANCE TYPES TOD D 90D ^53=131 DOlDlSb 4 T -T J-o y 10 15 6 Jl BY260 SERIES SILICON BRIDGE RECTIFIERS Ready for use full-wave bridge rectifiers in a plastic encapsulation. The bridges are intended for use in equipment supplied from a.c. with r.m.s. voltages up to 420 V and

Contextual Info: .11 N AMER PHILIPS/DISCRETE bbS3=131 0Dlb73eJ 3 SSE D _ / v _ BY720 BY72t SILICON VERY FAST EHT SOFT-RECOVERY RECTIFIER DIODES* EH T rectifier diodes in glass envelopes intended for use in high voltage applications such as the high

transistor D 5032

Abstract: 5032 transistor philips FP 9600 2222 372 d 5032 transistor APX 2600 TRANSISTOR PHL 0284 2222 379 2322 731 D0246
Contextual Info: bbS 3 q 31 Philips Semiconductors ODEMflga 335 W A P X Product specification NPN 4 GHz wideband transistor M ANER DESCRIPTION ^ PHILIPS/DISCRETE L7E BFG35 D _ PINNING NPN planar epitaxial transistor mounted in a plastic SOT223 envelope. Intended for wideband

BF981

Abstract: bf981 TRANSISTOR gs gl 317 tv tuner SOT103 transistor Bf981
Contextual Info: BF981 J v _ _ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type fietd-effect transistor in a plastic X-package with source and substrate interconnected, intended for V H F applications, such as V H F television tuners, FM tuners and professional communi­

BUK455-60A

Abstract: K455-60A BUK455-60B diode d2s BUK455 T0220AB k455
Contextual Info: N AMER PHILIPS/DISCRETE LTE D ^53^31 □□3Db4Q TTl HiAPX Product Specification Philips Semiconductors B U K455-60A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

BFG540

Abstract: transistor N43
Contextual Info: Philips Semiconductors • bb53cl31 0D25011 253 « A P X Product specification N AMER PHILIPS/DISCRETE b7E D NPN 9 GHz wideband transistor £ BFG540; BFG540/X; BFG540/XR FEATURES PINNING PIN High power gain • Low noise figure • High transition frequency

Contextual Info: PowerMOS transistor_ N AUER PHILIPS/DISCRETE QbE D • BIJZ35_ [^53=131 O O l M b n 5 ■ T - 3 V l J July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor In a metal envelope. This device is intended for use in

Contextual Info: • iabS3R31 DGPSMbfl fib? ■ APX N AMER PHILI PS/ DISCRE TE BSP50 BSP51 BSP52 b7E D _ J NPN SILICON PLANAR DARLINGTON TRANSISTORS Silicon npn planar Darlington transistors for industrial switching applications, e.g. print hammer, solenoid, relay and lamp driving. Encapsulated in a microminiature SOT-223 envelope,

557 sot143

Abstract: PHILIPS 557 SOT143 BFG505 BFRS05 LG 631 TV LG t51 0194 asm 1442
Contextual Info: Philips Semiconductors AMER bbS3T31 ODSHTb? P H IL IP S /D IS C R E T E NPN 9 GHz wideband transistor FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. SMfl ^ Product specification

Contextual Info: JJL DtE D N AMER PHILIPS/DISCRETE ^ 53=131 0Diifli3 t BTV58 SERIES FAST GATE TURN-OFF THYRISTORS ! Thyristors in TO-220AB envelopes capable of being turned both on and off via the gate. They are suitable for use in high-frequency inverters, power supplies, motor control etc. The devices have no

MCB700

Abstract: n7000 A 673 C2 transistor 2n7000 Lk53
Contextual Info: Philips Components 2N7000 Data sheet status Product specification date o f Issue October 1990 N-channel enhancement mode vertical D-MOS transistor QUICK REFERENCE DATA FEATURES • Low R 0S on SYMBOL • Direct interface to C-MOS, TTL, etc. Vos drain-source voltage