BSP52 Search Results
BSP52 Datasheets (33)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| BSP52 | Fairchild Semiconductor | NPN Darlington Transistor | Original | 35.81KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP52 | Infineon Technologies | TRANS DARLINGTON NPN 80V 1A 3SOT-223 | Original | 93.48KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP52 | Infineon Technologies | NPN Silicon Darlington Transistor with high collector current | Original | 146.6KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP52 | Infineon Technologies | Darlington Transistors; Package: PG-SOT223-4; Polarity: NPN; VCEO (max): 80.0 V; Ptot (max): 1,500.0 mW; hFE (min): 2,000.0; IC: 500.0 mA; | Original | 118.74KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP52 | NXP Semiconductors | BSP52 - NPN Darlington transistors - Complement: BSP62 ; fT min: 200 typ. MHz; hFE max:>2000 ; hFE min: 2000 ; IC max: 1000 mA; Polarity: NPN ; Ptot max: 1250 mW; toff: 1300 ns; VCES max: 80 V | Original | 66.4KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP52 | Philips Semiconductors | NPN Darlington Transistor | Original | 51.63KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP52 | Philips Semiconductors | NPN Darlington Transistor | Original | 94.14KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP52 | Siemens | Cross Reference Guide 1998 | Original | 27.35KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP52 | Siemens | RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide | Original | 465.63KB | 37 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP52 | Siemens | NPN Silicon Darlington Transistors (High collector current Low collector-emitter saturation voltage) | Original | 156.26KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP52 | Motorola | SOT-223 Devices - Switching Transistors / Darlingtons / Tuning Diode | Scan | 288.24KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP52 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 88.64KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP52,115 | NXP Semiconductors | NPN Darlington transistors - Complement: BSP62 ; fT min: 200 typ. MHz; hFE max:>2000 ; hFE min: 2000 ; IC max: 1000 mA; Polarity: NPN ; Ptot max: 1250 mW; toff: 1300 ns; VCES max: 80 V; Package: SOT223 (SC-73); Container: Tape reel smd | Original | 66.45KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP 52 E6327 | Infineon Technologies | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN DARL 80V 1A SOT-223 | Original | 560.31KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP52E6327 | Infineon Technologies | Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR DARL NPN 80V SOT-223 | Original | 8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP52E6327 | Infineon Technologies | TRANS DARLINGTON NPN 80V 1A 3SOT-223 T/R | Original | 93.48KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP52H6327 | Infineon Technologies | Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN DARL 80V 1A SOT223 | Original | 8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP52H6327XTSA1 | Infineon Technologies | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN DARL 80V 1A SOT223 | Original | 565.41KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP52T1 | Motorola | MEDIUM POWER NPN SILICON DARLINGTON TRANSISTOR SURFACE MOUNT | Original | 115.21KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP52T1 | On Semiconductor | TRANS DARLINGTON NPN 80V 1A 3SOT-223 T/R | Original | 89.65KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSP52 Price and Stock
onsemi BSP52T1GTrans Darlington NPN 80V 1A 1250mW 4-Pin(3+Tab) SOT-223 T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSP52T1G | 24,000 | 1,000 |
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| BSP52T1G | 350 | 12 |
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BSP52T1G | Tape & Reel | 56 Weeks | 1,000 |
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BSP52T1G | 5,717 |
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BSP52T1G | Cut Strips | 350 | 1 |
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| BSP52T1G | Cut Strips | 5 | 56 Weeks | 1 |
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BSP52T1G | Tape & Reel | 23,705 | 100 |
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| BSP52T1G | Cut Tape | 23,705 | 5 |
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| BSP52T1G | Tape & Reel | 5,000 |
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| BSP52T1G | Tape & Reel | 2,000 |
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| BSP52T1G | Cut Tape | 2,000 |
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BSP52T1G | 24,000 |
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BSP52T1G | 2,406 | 1 |
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| BSP52T1G | 1,677 |
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BSP52T1G | 2,152 |
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| BSP52T1G | 1,644 |
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| BSP52T1G | 1,404 |
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| BSP52T1G | 280 |
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| BSP52T1G | 24 |
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BSP52T1G | 899 | 1 |
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BSP52T1G | 1 |
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BSP52T1G | 7,644 |
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BSP52T1G | 56 Weeks | 6,000 |
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BSP52T1G | 35 Weeks | 1,000 |
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BSP52T1G | 36 Weeks | 1,000 |
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BSP52T1G | 64 | 1 |
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BSP52T1G | 24,000 |
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BSP52T1G | 9,000 |
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Nexperia BSP52,115Trans Darlington NPN 80V 1A 1250mW 4-Pin(3+Tab) SC-73 T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSP52,115 | 14,000 | 850 |
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BSP52,115 | Tape & Reel | 53 Weeks, 1 Days | 4,000 |
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BSP52,115 | Cut Tape | 1 |
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| BSP52,115 | Tape & Reel | 100 |
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BSP52,115 | 14,000 | 1 |
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BSP52,115 | 1 |
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BSP52,115 | 30 Weeks | 5,000 |
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BSP52,115 | 32 Weeks | 1,000 |
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BSP52,115 | 10,601 |
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Infineon Technologies AG BSP52H6327XTSA1Trans Darlington NPN 80V 1A 1500mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-223 T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSP52H6327XTSA1 | 4,000 | 2,275 |
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BSP52H6327XTSA1 | Tape & Reel | 8 Weeks | 5,000 |
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BSP52H6327XTSA1 | 5,000 | 1 |
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BSP52H6327XTSA1 | 1,000 |
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BSP52H6327XTSA1 | 27 Weeks | 1,000 |
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BSP52H6327XTSA1 | 9,266 |
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onsemi BSP52T1- Tape and Reel (Alt: BSP52T1) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSP52T1 | Tape & Reel | 38 Weeks, 4 Days | 1,000 |
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BSP52T1 | 5,506 | 1 |
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BSP52T1 | 4,404 |
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BSP52T1 | 21,200 |
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onsemi BSP52T3G- Tape and Reel (Alt: BSP52T3G) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSP52T3G | Tape & Reel | 44 Weeks | 8,000 |
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BSP52T3G | 1,070 |
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BSP52T3G | Tape & Reel | 4,000 |
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| BSP52T3G | Cut Tape | 4,000 |
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BSP52T3G | Bulk | 50 |
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BSP52T3G |
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BSP52T3G | 1 |
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BSP52T3G | 44 Weeks | 8,000 |
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BSP52T3G | 34 Weeks | 4,000 |
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BSP52T3G | 35 Weeks | 4,000 |
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BSP52T3G | 6,838 |
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BSP52 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
T2T TRANSISTORContextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Sm all-Signal Darlington Transistor BSP52T1 M otorola Preferred Device This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is |
OCR Scan |
bsp52t1ot-223inch/1000bsp52t3+3 | |
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Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 BSP50; BSP51; BSP52 NPN Darlington transistors Product specification Supersedes data of 1997 Apr 22 1999 Apr 23 Philips Semiconductors Product specification NPN Darlington transistors BSP50; BSP51; BSP52 |
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m3d087bsp50bsp51bsp52+3 | |
TRANSISTOR AS3
Abstract: TRANSISTOR LWW 20 transistor code AS3 On semiconductor date Code sot-223 AS3 SOT223 as3 Transistor transistor code LWW FR4 GLASS EPOXY AS3 MARKING TRANSISTOR LWW 40
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bsp52t1ot-223inch/1000bsp62t1+10 | |
TRANSISTOR LWW 20
Abstract: transistor code AS3 BSP52T1 aS3 DPAK On semiconductor date Code sot-223 TRANSISTOR LWW 23 BSP62T1 SMD310 TRANSISTOR AS3
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bsp52t1ot-223inch/1000bsp62t1+9 | |
MLB826
Abstract: BSP50 BSP51 BSP52 BSP60 BSP61 BSP62
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OCR Scan |
bsp50bsp51bsp52ot223+4 | |
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Contextual Info: BSP50-BSP52 NPN Silicon Darlington Transistors • High collector current 4 • Low collector-emitter saturation voltage 3 2 • Complementary types: BSP60 - BSP62 PNP 1 • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking Pin Configuration |
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bsp50-bsp52bsp60bsp62bsp50+3 | |
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Contextual Info: BSP60 . BSP62 PNP Silicon Darlington Transistors High collector current 4 Low collector-emitter saturation voltage Complementary types: BSP50 . BSP52 NPN 3 2 1 Type Marking Pin Configuration BSP60 BSP 60 1=B 2=C 3=E 4=C SOT223 BSP61 BSP 61 1=B |
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bsp60bsp62bsp50bsp52+3 | |
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Contextual Info: BSP50 . BSP52 NPN Silicon Darlington Transistors High collector current 4 Low collector-emitter saturation voltage Complementary types: BSP60 . BSP62 PNP 3 2 1 Type Marking Pin Configuration BSP50 BSP 50 1=B 2=C 3=E 4=C SOT223 BSP51 BSP 51 1=B |
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bsp50bsp52bsp60bsp62+3 | |
BSP 450Contextual Info: BSP60 . BSP62 PNP Silicon Darlington Transistors High collector current 4 Low collector-emitter saturation voltage Complementary types: BSP50 . BSP52 NPN 3 2 1 Type Marking Pin Configuration BSP60 BSP 60 1=B 2=C 3=E 4=C SOT223 BSP61 BSP 61 1=B |
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bsp60bsp62bsp50bsp52+4 | |
BSP50
Abstract: BSP51 BSP52 BSP60 BSP50-BSP52
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bsp50-bsp52bsp60bsp52bsp50+2 | |
transistor code AS3
Abstract: TRANSISTOR AS3 BSP52T1 BSP52T1G BSP62T1 PH* transistor
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bsp52t1ot-223inch/1000bsp62t1+5 | |
BC516
Abstract: BC517
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OCR Scan |
bcp28bcp29bcp48bcp49+8 | |
BSP50
Abstract: BSP51 BSP52 BSP60 BSP61 BSP62 SC-73
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m3d087bsp50bsp51bsp52+5 | |
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Contextual Info: DISCRETE SEMICONDUCTORS DAT handbook, halfpage M3D087 BSP50; BSP51; BSP52 NPN Darlington transistors Product data sheet Supersedes data of 1997 Apr 22 1999 Apr 23 NXP Semiconductors Product data sheet NPN Darlington transistors BSP50; BSP51; BSP52 FEATURES |
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m3d087bsp50bsp51bsp52+3 | |
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Contextual Info: BSP52T1G, BSP52T3G NPN Small-Signal Darlington Transistor This NPN small signal Darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is housed in the SOT-223 package, which is |
Original |
bsp52t1gbsp52t3got-223bsp52t1+3 | |
TRANSISTOR LWW 20
Abstract: onsemi SOT-223 BSP52T1 BSP62T1 SMD310 transistor code AS3
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Original |
bsp52t1ot-223inch/1000bsp62t1+6 | |
BSP52T1
Abstract: BSP52T1G BSP52T3 BSP52T3G BSP62T1 306 marking code transistor
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Original |
bsp52t1bsp52t3ot-223inch/1000+4 | |
MARKING BSP52
Abstract: VPS05163 BSP50 BSP51 BSP52 BSP60 BSP62
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Original |
bsp50bsp52bsp60bsp62+4 | |
BSP62Contextual Info: BSP60 . BSP62 PNP Silicon Darlington Transistors High collector current 4 Low collector-emitter saturation voltage Complementary types: BSP50 . BSP52 NPN 3 2 1 Pin Configuration VPS05163 Type Marking Package BSP60 BSP 60 1=B 2=C 3=E 4=C SOT223 |
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bsp60bsp62bsp50bsp52+3 | |
transistor marking LG
Abstract: npn transistor footprint
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OCR Scan |
ot-223bsp52t1inch/1000bsp52t3+4 | |
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Contextual Info: BSP52T1 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)80 V(BR)CBO (V) I(C) Max. (A)90 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.2.0k h(FE) Max. Current gain. |
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bsp52t1 | |
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Contextual Info: BSP50 BSP51 BSP52 NPN SILICON PLANAR DARLINGTON TRANSISTORS S ilic o n npn plan ar D a rlin g to n tra nsistors fo r in d u s tria l sw itc h in g a p p lica tio n s, e.g. p r in t hammer, so le n o id , relay and lamp d riv in g . Encapsufated in a m ic ro m in ia tu re S O T -223 package. |
OCR Scan |
bsp50bsp51bsp52bsp60 | |
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Contextual Info: Philips Semiconductors Product specification NPN Darlington transistors BSP50; BSP51 ; BSP52 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V) 1 • Integrated diode and resistor. DESCRIPTION base 2,4 collector emitter 3 APPLICATIONS |
OCR Scan |
ot223bsp60bsp61bsp62+3 | |
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Contextual Info: b 3 b 7 5 S ll G l O l S i a t m • MOTb Order this data sheet by BSP52T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BSP52T1 NPN Small-Signal Darlington Transistor Motorola Preferred Device This NPN small signal darlington transistor is designed for use In switching applications, |
OCR Scan |
bsp52t1/dbsp52t1ot-223inch/1000+1 | |