B86 MARKING Search Results

BSZ520N15NS3

Abstract: marking 6B s4si 6B104 I6025 marking a6b
Contextual Info: Je]R BSZ520N15NS3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q AD:> :J65 7@B 54 54 4@? F6BC:@? Q 492 ? ? 6=  ? @B> 2 = 6F6= V 9I )-( K R 9I"\[#$ZNd -* Z" I9 *) 6 Q  H46= = 6? D82 D6 492 B86 HR 9I"\[# AB@5E4D ) '  Q& @G @? B6C:CD2 ? 46 R 9I"\[#

marking code 2fa

Contextual Info: NOTES: I. TH I R D MATERIALS AND ANGLE REV I S I O N S PROJ. REV FINISHES: RELEASE ZINC D I E C A S T PER A S T M B86, M A T T E TIN P L A T I N G . 0 0 0 1 0 0 T H I C K MIN. B R A S S P E R A S T M B I 6 , N I C K E L PL. 100 M I N . T H I C K O V E R C O P P E R S T R I K E

diode s6 6d

Abstract: MARKING 6B diode b86g s4si marking EB diode DIODE 4d gv marking 6B 6H MARKING diode IPP023N04N marking a6b
Contextual Info: IPP023N04N G Ie]R IPB023N04N G "%&$!"# 3 Power-Transistor Product Summary Features Q & ,  - 7@B( + :? 8 2 ? 5 . ? :? D6BB EAD:3 = 6 @G6B, EAA= I Q * E2 = :7:65 2 44@B5:? 8 D@ $     )# 7@BD2 B86D2 AA= :42 D:@? C V 9H ,( K R  , @? >2 H *&+ Z"

Contextual Info: defining a degree of excellence RoHS6 Compliant Radial Leaded PTC 0ZRM Series 0ZRMD0708 Electrical Characteristic 23 o C 587B/:22F8 @&:3;B5;59FA Applications Line Voltage Power Supply, Transformer and Appliances Product Product Features Continuous Use at Voltages up to 120VAC/VDC

b72 voltage regulator

Abstract: marking A93 A75 marking code marking a86
Contextual Info: MN18R1624 8 DF0 MP18R1624(8)DF0 Revision History Version 1.0 (May 2003) - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMMTM Module Datasheet. Version 1.1 (Aug. 2003) - Add PGA type 144MB NexMod Module. - Add the discription of index pin marking.

marking a86

Contextual Info: MN18R1624 8 DF0 MP18R1624(8)DF0 Revision History Version 1.0 (May 2003) - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMMTM Module Datasheet. Version 1.1 (Aug. 2003) - Add PGA type 144MB NexMod Module. - Add the discription of index pin marking.

B83 004

Abstract: marking a86 b72 voltage regulator
Contextual Info: MN18R162 4 8DF0 MP18R162(4)8DF0 Revision History Version 1.0 (May 2003) - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMM Datasheet. Version 1.1 (Aug. 2003) - Add PGA type 144MB NexMod. - Add the discription of index pin marking. - Correct the physical dimension of PGA NexMod.

siemens a55

Abstract: siemens A70 marking b28 siemens a57 siemens b38
Contextual Info: HYR16xx30/HYR18xx20G Rambus RIMM Modules Direct RDRAM RIMM Modules with 128/144 Mb RDRAMs Perliminary Information Rev. 0.9 Overview Form Factor The Direct Rambus RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including

MARKING B83

Abstract: A74 marking diode u2 a90 marking A32 HYR163200G-653 HYR163200G-745 HYR163200G-840 HYR163200G-845 HYR183200G-653 HYR183200G-745
Contextual Info: HYR16 18 3200G 64/72 MByte RIMM Modules Direct RDRAM RIMM Modules Perliminary Information Rev. 0.9 Features Overview n The Direct Rambus RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including

thk 75

Contextual Info: 80 Trompeter general material/finish specifications TFS-1: Finish Specifications TFS-1A .0001- .0003 max thk Bright Nickel per QQ-N-290, Class1, Form SB over .000080-.000150 thk Bright Copper per MIL-C-14550 (over) .0005 max Electroless Nickel per AMS-2404C, Class 1

Contextual Info: 91 Trompeter general material/finish specifications TFS-1: Finish Specifications TFS-1A .0001- .0003 max thk Bright Nickel per QQ-N-290, Class1, Form SB over .000080-.000150 thk Bright Copper per MIL-C-14550 (over) .0005 max Electroless Nickel per AMS-2404C, Class 1

HYR163249G-653

Abstract: HYR163249G-840 HYR166449G-653 HYR166449G-845 A17 INFINEON
Contextual Info: HYR16xx49G 64MB & 128MB Rambus RIMM Modules Direct RDRAM RIMM Modules with 288 Mbit RDRAMs Overview The Direct Rambus RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory, personal computers,

MARKING CODE B82

Abstract: a87 marking Marking b66 marking a86 MARKING B83 marking a75
Contextual Info: MR18R162WAG0 Change History Version 1.0 January 2002 * First copy. * Based on the 1.0 ver. 288Mbit RIMM Module Datasheet Version 1.1 (July 2002) * Based on the 1.0 ver.(January 2002) 288Mbit A-die 32d RIMM Module Datasheet * eliminate "Target" etc. Page 0

a80 marking code

Abstract: MR18R162WDG0-CM8 B83 004 marking code B38 MR18R162WDG0 MR18R162WDG0-CK8 marking A70 marking code b84
Contextual Info: MR18R162WDG0 Change History Version 1.0 July 2002 * First copy. * Based on the 1.1 ver.(July 2002) 288Mbit A-die 32d RIMM Module Datasheet Page 0 Version 1.0 July. 2002 MR18R162WDG0 (16Mx18)*32pcs RIMM Module based on 288Mb D-die, 32s banks,16K/32ms Ref, 2.5V

QQ-S-636

Abstract: MIL-P-27418 QQ-S-571 silver
Contextual Info: 76 Trompeter general material/finish specifications TFS-1: Finish Specifications TFS-1A .0001- .0003 max thk Bright Nickel per QQ-N-290, Class1, Form SB over .000080-.000150 thk Bright Copper per MIL-C-14550 (over) .0005 max Electroless Nickel per AMS-2404C, Class 1

b41 Marking

Contextual Info: MR18R162WEG0 Change History Version 0.1 January 2004 * First copy. * Based on the 1.0 ver.(July 2002) 288Mbit D-die 32d RIMM Module Datasheet Version 1.0 (May 2004) * Eliminate "Preliminary" Page 0 Version 1.0 May 2004 MR18R162WEG0 (16Mx18)*32pcs RIMM Module based on 288Mb E-die, 32s banks,16K/32ms Ref, 2.5V

A76 MARKING CODE

Abstract: a77 package marking a80 marking code marking A32 marking A45 marking code B38 MR18R162WEG0-CM8 MARKING B17 MARKING CODE B82 marking a86
Contextual Info: Preliminary MR18R162WEG0 Change History Version 0.1 January 2004 * First copy. * Based on the 1.0 ver.(July 2002) 288Mbit D-die 32d RIMM Module Datasheet Page 0 Version 0.1 Jan. 2004 Preliminary MR18R162WEG0 (16Mx18)*32pcs RIMM Module based on 288Mb E-die, 32s banks,16K/32ms Ref, 2.5V

transistor marking A21

Abstract: a74 marking code b82 400 B83 004 marking B44 MARKING CODE b48
Contextual Info: MR18R162WAG0 Change History Version 1.0 January 2002 * First copy. * Based on the 1.0 ver. 288Mbit RDRAMs RIMM Datasheet Version 1.1 (July 2002) * Based on the 1.0 ver.(January 2002) 288Mbit A-die 32d RIMM Datasheet * eliminate "Target" etc. Page 0 Version 1.1 July. 2002

Contextual Info: T rompeter t f s - 1 : F i n i s h S p e c i f i c a t i o n s _ TFS-1A .0001 • .0003 max thk Bright Nickel per QQ-N-290, C la ssl, Form SB over .000080-.000150 thk Bright Copper per MIL-C-14550 (over) .0005 max Electroless Nickel per AMS-2404C, Class 1

a80 marking code

Abstract: marking A32 marking A86 marking code B38 samsung electronics logo
Contextual Info: MR16R0828ER T 0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.0ver. 128Mb D-die Consumer RIMM Module Datasheet. Page 0 Version 1.0 July 2002 MR16R0828ER(T)0 (8Mx16)*8pcs Consumer RIMM Module based on 128Mb E-die, 32s banks,16K/32ms Ref, 2.5V

Contextual Info: MR16R0828DR T 0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.0ver. 128Mb B-die Consumer RIMM Module Datasheet. Page 0 Version 1.0 July 2002 MR16R0828DR(T)0 (8Mx16)*8pcs Consumer RIMM Module based on 128Mb D-die, 32s banks,16K/32ms Ref, 2.5V

transistor marking A21

Abstract: a74 marking code b37 diode
Contextual Info: Preliminary MR16R0828ER T 0 Change History Version 1.0 (July 2002) - Preliminary * First copy. * Based on the 1.0ver. 128Mb RDRAMs(D-die) Consumer RIMM Datasheet. Page 0 Version 1.0 July 2002 Preliminary MR16R0828ER(T)0 (8Mx16)*8pcs Consumer RIMMTM Module based on 128Mb E-die, 32s banks,16K/32ms Ref, 2.5V

MR16R0824BS0-CG6

Abstract: MR16R0828BS0-CG6
Contextual Info: Preliminary MR16R0824 8 BS0 Change History Version 1.0 (October 2000) - Preliminary * First copy. * Based on the 1.1ver. 128/144Mb RDRAMs(B-die) base RIMM Datasheet. Page 0 Version 1.0 Oct. 2000 Preliminary MR16R0824(8)BS0 (8Mx16)*4(8)pcs Consumer RIMMTM Module based on 128Mb B-die, 32s banks,16K/32ms Ref, 2.5V

A23 851 diode

Abstract: diode 910 b34 HYMR225616 HYMR26416 256MX16 H-745
Contextual Info: TM RIMM Module with 256/288Mb RDRAMs Preliminary Overview Key Timing Parameters/Part Numbers The Rambus RIMMTM module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other