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Abstract: MS62256L-10 MS62256 MS62256L-12 MS62256L-70 MS62256L-70FC MS62256L-85 T-46 ms62256l-70pc MS62256L10PC
Contextual Info: S4E » b3533Tl 00D13TÏ 311 MOSEL IMOVI MS62256 32K x 8 CMOS Static RAM MOSEL-VITELIC r r -4 1 0 -2 3 -1 3 » FEATURES DESCRIPTION • High-speed - 70/85/100/120 ns The MOSEL M S62256 is a 262,144-bit static random access memory organized as 32,768 words by 8 bits and

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Contextual Info: MOSEL-VITELIC b2E » MOSEL-VITELIC • b3533Tl GGGS33L. GES ■ M O V I V104J232, V104J236 512K X 32, 512K x 36 SIMM PRELIMINARY Features Description a 524,288 x 32 bit or 524,288 x 36 bit The V104J232 Memory Module is organized as 524,288 x 32 bits in a 72-lead single-in-line module.

weitek

Abstract: 80386 chipset block diagram of 80386 microprocessor 82c331
Contextual Info: flOSEL-VITELIC 4ÔE D MOSEL • b3533Tl OODlOb? 3 ■ UOVI Product Brief MS82C330 Cache Chipset for 80386 Systems with Write-Thru Cache FEATURES Quad fetch mode uses 16 byte subblocks for improved hit rate - Demand word fetch first strategy reduces miss penalty

Contextual Info: S4E J> b3533Tl D0D1377 7SQ • MOVI MOSEL MS6264 8K x 8 CMOS StaticRAM n O S E L - V l T E L I C FEATURES DESCRIPTION • Available in 70/100 ns Max. The MOSEL MS6264 is a high performance, low power CMOS static RAM organized as 8192 words by 8 bits. The

Contextual Info: SME » b3533Tl DDDmOb 3fll MOSEL novi MS62256C 32K x 8 CMOS Static RAM nO-SEL-VITELIC FEATURES DESCRIPTION • High-speed - 70/100/120/150 ns The MOSEL MS62256C is a 262,144-bit static random access memory organized as 32,768 words by 8 bits and operates from a single 5 volt supply. It is built with

7202A

Contextual Info: M OSEL V ITEU C MS7200U7201AL/7202AL 256x9,512x9, 1Kx9 CMOS FIFO Features Descriptions • First-In/First-Out static RAM based dual port memory ■ Three densities in a x9 configuration ■ Low power versions ■ Includes empty, full, and half full status flags

Contextual Info: M O SEL VITELIC V53C311616500 3.3 VOLT 1 M X 16 EDO PAGE MODE CMOS DYNAMIC RAM HIGH PERFORMANCE 50 60 70 Max. RAS Access Time, Irac 50 ns 60 ns 70 ns Max. Column Address Access Time, (^ aa) 25 ns 30 ns 35 ns Min. Extended Data Out Page Mode Cycle Time, fcc)

Contextual Info: MOSEL VITELIC V53C316580500 3.3 VOL T 8 M X 8 EDO PA GE MODE CMOS DYNAMIC RAM 40 50 60 Max. RAS Access Time, tRAC 40 ns 50 ns 60 ns Max. Column Address Access Time, (tcM) 20 ns 25 ns 30 ns Min. EDO Page Mode Cycle Time, (tPC) 16 ns 20 ns 25 ns Min. Read/Write Cycle Time, (tRC)

V53C8256H

Contextual Info: MOSEL VITELIC V53C8256H ULTRA-HIGH PERFORMANCE, LOW POWER 256KX 8 BIT FAST PAGE MODE CMOS DYNAMIC RAM HIGH PERFORMANCE PRELIMINARY 35 40 45 50 Max. RAS Access Time, tRAc 35 ns 40 ns 45 ns 50 ns Max. Column Address Access Time, (tCAA) 18 ns 20 ns 22 ns 24 ns

Contextual Info: MOSEL-VITELIC 4ûE D • ta3S33Tl 0 0 0 0 7 0 7 MOSEL T ■ HO MS6264A 8K x 8 High Speed CMOS Static RAM T -4 6 -2 3 -1 2 FEATURES DESCRIPTION • High spaed - 45/55 ns Max. The MOSEL MS6264A is a high performance, low power CMOS static RAM organized as 8192 words by 8 bits. The

Contextual Info: M O S E L V IT E L IC V53C818H H IG H PERFORM ANCE 5 1 2 K X 16 EDO PA GE MODE CMOS DYNAM IC RAM HIGH PERFO RM ANC E PRELIM INARY 30 35 40 45 50 Max. RAS Access Time, tRAc 30 ns 35 ns 40 ns 45 ns 50 ns Max. Column Address Access Time, (^ aa) 16 ns 18 ns

Contextual Info: M O S E L VÊTEL IC V53C8256H U LTR A -H IG H PERFO RM ANCE, L O W PO W ER 2 5 6 K X 8 B IT F A S T P A G E M O D E CM O S D YN A M IC R A M H IG H P E R F O R M A N C E Max. RAS Access Time, tRAC 4 5 /4 5 L 5 0 /5 0 L 5 5 /5 5 L 6 0 /6 0 L 45 ns 50 ns 55 ns

Contextual Info: bEE » MOSEL-VITELIC MOSEL- VITELIC • baSBB^l DDGSOSb 170 ■ MOVI V53C404F HIGH PERFORMANCE, LOW POWER 1 M X 4 BIT FAST PAGE MODE CMOS D YNAMIC RAM H IG H P E R F O R M A N C E V 5 3 C 4 0 4 F Max. RAS Access Time, tRAf. PRELIMINARY 6 0 /6 0 L 7 0 /7 0 L

Contextual Info: nOSEL-VITELIC bSE ]> • b3S33Tl G0 Dlfl2ö b?b M M O V I V53C256A FAMILY HIGH PERFORMANCE, LOW POWER 2 5 6 K X 1 BIT FAST PAGE MODE CMOS DYNAMIC RAM MOSEL- VITELIC H IG H P E R F O R M A N C E V 5 3 C 2 5 6 A 6 0 /6 0 L 7Q /70L 8 0 /8 0 L 1 0 /1 0 L 60 ns

Contextual Info: MOSEL VITELIC V43648Y04V C TG-75 3.3 VOLT 8M x 64 HIGH PERFORMANCE PC133 UNBUFFERED SODIMM Features PRELIMINARY The V 4 3648Y 04V (C )T G -75 memory module is organized 8 ,388,608 x 64 bits in a 144 pin S O D IM M . The 8M x 64 memory module uses 8 Mosel-Vitelic 4M x 16 SD R A M . The x64 modules

Contextual Info: MOSEL VITELIC INC. preliminary M SS2105/S3205/S4305/S6605 August 1996 2 1 '7 3 2 '7 4 3 '7 6 0 " V O IC E R O M Features Single power can operate at 2.4V through 6.0V. Current output could drive 8 ohm speaker with a transistor, Vout could drive buzzer directly.

Contextual Info: M O S E L V IT E L IC V53C8257H U LTR A -HIG H SPEED, 256KX 8B IT P A G E M O D E WITH E X TE N D E D DATA O U T P U T ED O A N D C A S B U R S T M O D E CM O S D YN A M IC R A M PR E LIM IN A R Y 45/45L 50/50L 55/55L 60/60L Max. RAS Access Time, Orac)

Contextual Info: M O SE L VITELIC PRELIMINARY V62C518256 32Kx8 BIT STATIC RAM Features Description • High-speed: 35,45, 55, 70 ns ■ Ultra low DC operating current of 5mA Max. ■ Low Power dissipation: TTL Standby: 3mA (Max.) CMOS Standby: 20n.A (Max.) ■ Fully static operation

Contextual Info: M O SEL VTTEUC PRELIMINARY V104J232 512K x 32 SIMM Features Description 524,288 x 32 bit organizations Utilizes 256K x 4 CMOS DRAMs Fast access times 70 ns, 80 ns, 100 ns Fast Page mode operation Low power dissipation _ CAS before RAS refresh, RAS only refresh, and

Contextual Info: M O S EL V IT E L IC V53C8129H ULTRA-HIGH PERFORMANCE, 128K X 8 BIT EDO PAGE MODE CMOS DYNAMIC RAM PRELIMINARY 35 40 45 50 Max. RAS Access Time, tRAC 35 ns 40 ns 45 ns 50 ns Max. Column Address Access Time, (Icu ò 18 ns 20 ns 22 ns 24 ns Min. Fast Page Mode With EDO Cycle Time, (tpC)

Contextual Info: M O S EL V IT E L IC V53C511816502 1M x 16 EDO PA G E M ODE CMOS DYNAM IC RAM OPTIONAL SE LF REFRESH HIGH PERFORMANCE 50 60 Max. RAS Access Time, Jrac 50 ns 60 ns Max. Column Address Access Time, (^;aa ) 25 ns 30 ns Min. Extended Data Out Page Mode Cycle Time, (1pC)

Contextual Info: M O SEL VITELIC PREW BBtO M V62C51864 8Kx8 B IT STA TIC RAM Features Description • ■ ■ The V 62C 51864 is a 65,536-bit static random access memory organized as 8,192 words by 8 bits. It is built with M O SE L VITE LIC ’s high performance C M O S process. Inputs and three state outputs are

Contextual Info: M O SEL V tTE LiC V53C8512N 3.3 VOLT, LO W POWER 512K x 8 AN D 5 1 2 K x 9 B IT FA S T PAGE MODE CMOS DYNAMIC RAM PRELIM INARY HIGH PERFORMANCE V53C8512N 60/60L 70/70L M ax. R A S A cce ss T im e, Orac 6 0 ns 70 ns M ax. C o lum n A d dre ss A cce ss T im e , tCAA)

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Abstract: V53C104F
Contextual Info: M O S E L VTTELÊ C V53C 104F H IG H PE R FO RM A N CE, L O W P O W E R 2 5 6 K X 4 B IT F A S T P A G E M O D E CM O S D Y N A M IC R A M 60/60L 70/70L 80/80L Max. RAS Access Time, tRAC 60 ns 70 ns 80 ns Max. Column Address Access Time, (tCAA) 30 ns 35 ns