B3533 Search Results

Contextual Info: MOSAIC SEMICONDUCTOR INC S3E D Wk b35337^ DDG1SS1 TbT • MOC 256 K x 8 SRAM moxaic M S 825 6R K X A -8 5 /1 0 /1 2 /1 5 Issue 1.0: June 1992 Mosaic ADVANCE PRODUCT INFORMATION Semiconductor Inc. 262,144 x 8 CMOS High Speed Static RAM Pin Definition vcc AO

Contextual Info: MOSAIC SEMICONDUCTOR INC S3E D • b35337T D001B3fl 525 « M O C 256K x 8 CMOS SRAM molaic M S M 8 2 5 6 -4 5 /5 5 /7 0 Issue 2.1 :August 1992 M osaic PRELIMINARY Sem iconductor Inc. r 262,144 x 8 CMOS High Speed Static RAM A Pin Definition Package Type ‘S \V

ULTRA HQX

Abstract: MS62256L-10 MS62256 MS62256L-12 MS62256L-70 MS62256L-70FC MS62256L-85 T-46 ms62256l-70pc MS62256L10PC
Contextual Info: S4E » b3533Tl 00D13TÏ 311 MOSEL IMOVI MS62256 32K x 8 CMOS Static RAM MOSEL-VITELIC r r -4 1 0 -2 3 -1 3 » FEATURES DESCRIPTION • High-speed - 70/85/100/120 ns The MOSEL M S62256 is a 262,144-bit static random access memory organized as 32,768 words by 8 bits and

kexz

Contextual Info: MOSEL-VITELIC b2E » MOSEL-VITELIC • b3533Tl GGGS33L. GES ■ M O V I V104J232, V104J236 512K X 32, 512K x 36 SIMM PRELIMINARY Features Description a 524,288 x 32 bit or 524,288 x 36 bit The V104J232 Memory Module is organized as 524,288 x 32 bits in a 72-lead single-in-line module.

weitek

Abstract: 80386 chipset block diagram of 80386 microprocessor 82c331
Contextual Info: flOSEL-VITELIC 4ÔE D MOSEL • b3533Tl OODlOb? 3 ■ UOVI Product Brief MS82C330 Cache Chipset for 80386 Systems with Write-Thru Cache FEATURES Quad fetch mode uses 16 byte subblocks for improved hit rate - Demand word fetch first strategy reduces miss penalty

Contextual Info: S4E J> b3533Tl D0D1377 7SQ • MOVI MOSEL MS6264 8K x 8 CMOS StaticRAM n O S E L - V l T E L I C FEATURES DESCRIPTION • Available in 70/100 ns Max. The MOSEL MS6264 is a high performance, low power CMOS static RAM organized as 8192 words by 8 bits. The

Contextual Info: MOSEL- VITELIC bEE D MOSEL- VITELIC b3533^1 G0DSS15 IbS IMOVI M S 7200/7201A /7202A 256x9,512x9, 1 K x 9 C M O S F IFO Features Descriptions • First-In/First-Out static RAM based dual port memory ■ Three densities in a x9 configuration ■ Low power versions

Contextual Info: SAW Components SAW Diplexer Short range devices Series/type: Ordering code: B3533 B3533A410 Date: Version: January 18, 2012 2.0  EPCOS AG 2012. Reproduction, publication and dissemination of this data sheet, enclosures hereto and the information contained therein without EPCOS’ prior express consent is prohibited.

YM 3533

Contextual Info: bEE D MOSEL-VITELIC MOSEL-VITELIC • b3533^1 Q0QS3MS 7Ô3 ■ M O V I V400J8/9 4M X 8, 4M X 9 B IT FA ST PAGE MODE CMOS DYNAMIC RAM M EM ORY MODULE HIGH PERFORMANCE, LO W POWER HIGH PERFORMANCE V400J8/9 PRELIMINARY 70/70L 80/80L 10/10L 70 ns 80 ns 100 ns

SAW 460 MHz

Abstract: F61074-V8229-Z000 B39431B3533A410 diplexer B3533
Contextual Info: SAW Components SAW Diplexer Short range devices Series/type: Ordering code: B3533 B3533A410 Date: Version: December 20, 2012 2.1  EPCOS AG 2012. Reproduction, publication and dissemination of this data sheet, enclosures hereto and the information contained therein without EPCOS’ prior express consent is prohibited.

Contextual Info: SME » b3533Tl DDDmOb 3fll MOSEL novi MS62256C 32K x 8 CMOS Static RAM nO-SEL-VITELIC FEATURES DESCRIPTION • High-speed - 70/100/120/150 ns The MOSEL MS62256C is a 262,144-bit static random access memory organized as 32,768 words by 8 bits and operates from a single 5 volt supply. It is built with

Contextual Info: MOSAIC SEMICONDUCTOR INC MOE » El b35337^ 0Q00S47 b &MO.C T ^ C ,-2 Z -H PUMA 3S4000 PUMA 3S4000-35/45/55 Issue 1.0 ¡O cto b e r 1990 Mosaic Sem iconductor In c Pin Definition 4,194,304 bit CMOS High Speed Static RAM Features Very Fast Access times of 35/45/55 ns.

Contextual Info: mosaic 512K x 32 FLASH MODULE PUMA 2/67/77F16006/A-80/90/12/15 semiconductor, inc. Issue 4 .0 : Novem ber 1996 Description Features Mosaic offers a flexible range of high density • 16 Megabit CMOS 5.0V operation only FLASH • Modules in industry standard packages. These

Contextual Info: 32Kx 32 EEPROM Module mosaic PUMA67E1001/A-90/12 Issue4.0: February 1996 semiconductor, inc. Description ThePUMA67E1001/AisalMbitCMOS EEPROM module in a JEDEC 68 pin J leaded Ceramic Surface Mount Substrate. Accesstimes of90and 120 ns are available.Theoutputwidth is

67S4000A

Abstract: 3D-30 A45 so
Contextual Info: mosaic 128KX 3 2 SRAM Module PUMA67S4000/A-45/55/70 semiconductor, inc. Issue 4.0: March 1996 4,194,304 bit CMOS High Speed Static RAM Description The PUMA67S4000/A is a 4Mbit CMOS High Speed Static RAM organised as 128kx 32 in a JEDECJ-leaded Ceramic Surface Mount

7420 ic details

Abstract: pin diagram ic 7420 IC 7420 function ic 4026 IC 4026 pin diagram 7420 ic
Contextual Info: 32K X 8 EEPROM mosaic MEM832-20/25 Issue 4.1 : June 1996 semiconductor, inc. 32,768 x 8 Non-volatile CMOS EEPROM Description The MEM832 is a 262,144 bit Non-Volatile CMOS EEPROM organised as a 32K x 8 with access times of 200 or 250 ns. The device features hardware and software data

7202A

Contextual Info: M OSEL V ITEU C MS7200U7201AL/7202AL 256x9,512x9, 1Kx9 CMOS FIFO Features Descriptions • First-In/First-Out static RAM based dual port memory ■ Three densities in a x9 configuration ■ Low power versions ■ Includes empty, full, and half full status flags

led flasher

Abstract: T-77-13
Contextual Info: 5 4E ]> • =,3533^1 00D1L.72 ' i l l ■ MOVI MOSEL NOSEL-VITELIC MSS0581 Speech Synthesizer (Voice ROM FEATURES • Single power can operate at 2.4V through 5V. • Direct drive buzzer and output could drive speaker. • Cascade function that can extend the speech

Contextual Info: MOSEL VITE LIC V53C16258H HIGH PERFORMANCE 2 5 6 K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH PRELIMINARY 25 28 30 35 40 Max. RAS Access Time, tRAC 25 ns 28 ns 30 ns 35 ns 40 ns Max. Column Address Access Time, (Iqaa ) 13 ns 15 ns 16 ns 18 ns

Contextual Info: M O SEL VITELIC V53C311616500 3.3 VOLT 1 M X 16 EDO PAGE MODE CMOS DYNAMIC RAM HIGH PERFORMANCE 50 60 70 Max. RAS Access Time, Irac 50 ns 60 ns 70 ns Max. Column Address Access Time, (^ aa) 25 ns 30 ns 35 ns Min. Extended Data Out Page Mode Cycle Time, fcc)

Contextual Info: MOSEL VITELIC V53C316580500 3.3 VOL T 8 M X 8 EDO PA GE MODE CMOS DYNAMIC RAM 40 50 60 Max. RAS Access Time, tRAC 40 ns 50 ns 60 ns Max. Column Address Access Time, (tcM) 20 ns 25 ns 30 ns Min. EDO Page Mode Cycle Time, (tPC) 16 ns 20 ns 25 ns Min. Read/Write Cycle Time, (tRC)

V53C8256H

Contextual Info: MOSEL VITELIC V53C8256H ULTRA-HIGH PERFORMANCE, LOW POWER 256KX 8 BIT FAST PAGE MODE CMOS DYNAMIC RAM HIGH PERFORMANCE PRELIMINARY 35 40 45 50 Max. RAS Access Time, tRAc 35 ns 40 ns 45 ns 50 ns Max. Column Address Access Time, (tCAA) 18 ns 20 ns 22 ns 24 ns

Contextual Info: MOSEL-VITELIC 4ûE D • ta3S33Tl 0 0 0 0 7 0 7 MOSEL T ■ HO MS6264A 8K x 8 High Speed CMOS Static RAM T -4 6 -2 3 -1 2 FEATURES DESCRIPTION • High spaed - 45/55 ns Max. The MOSEL MS6264A is a high performance, low power CMOS static RAM organized as 8192 words by 8 bits. The

Contextual Info: M O S E L V IT E L IC V53C818H H IG H PERFORM ANCE 5 1 2 K X 16 EDO PA GE MODE CMOS DYNAM IC RAM HIGH PERFO RM ANC E PRELIM INARY 30 35 40 45 50 Max. RAS Access Time, tRAc 30 ns 35 ns 40 ns 45 ns 50 ns Max. Column Address Access Time, (^ aa) 16 ns 18 ns