B20 DIODE Search Results

b20 diode

Abstract: 200v 100mA mosfet
Contextual Info: ISOCOM COMPONENTS ISPB20 DESCRIPTION The ISPB20 is a 1-Form B solid state relay in a space saving 4 pin DIL package. The ISPB20 utilises MOSFET technology that is optically coupled to a highly efficient GaAlAs infrared light emitting diode. B20 FEATURES •

Si4705

Abstract: FM transmitter 64-108 MHZ RDS bluetooth headphone schematic diagram AN342 Si4704 schematic diagram of bluetooth headphone mp3
Contextual Info: Si4704/05-B20 E NHANCED B ROADCAST F M R ADIO R ECEIVER FOR P ORTABLE A PPLICATIONS Features Worldwide FM band support 64–108 MHz Excellent real-world performance Supports integrated antenna Digital low-IF receiver Frequency synthesizer with integrated VCO

S1 DIODE

Abstract: Marking B23 Q62702-B20-S1 Q62702-B21-S1 Q62702-B22-S1 Q62702-B23-S2 marking 27 diode top marking S1
Contextual Info: Silicon Tuning Varactors ● Abrupt junction tuning diode ● Tuning range 120 V BBY 24 … BBY 27 Type Marking Ordering Code BBY 24-S1 – Q62702-B20-S1 BBY 25-S1 Q62702-B21-S1 BBY 26-S1 Q62702-B22-S1 BBY 27-S2 Q62702-B23-S2 Pin Configuration Package1 P

siemens 27 s1 diode

Abstract: Marking B23 BBY24 Q62702-B20-S1 Q62702-B22-S1 Q62702-B23-S2 T120 Q62702-B21 3SB05
Contextual Info: SIEM EN S Silicon Tuning Varactors BBY24 . BBY 27 • Abrupt junction tuning diode • Tuning range 120 V Type Marking Ordering Code BBY 24-S1 - Q62702-B20-S1 BBY 25-S1 Q62702-B21 -S1 BBY 26-S1 Q62702-B22-S1 BBY 27-S2 Q62702-B23-S2 Pin Configuration Package1

731 motorola

Abstract: RE11L MC6880 MC6880AL mc8t26a MC8T26AP
Contextual Info: MOTOROLA SC TELECOM bSE ]> • b3b?SS3 0Qflb347 b20 « M O T S MOTOROLA MC8T26A ■ SEMICONDUCTOR (M C 6880 A ) TECHNICAL DATA QUAD THREE-STATE BUS TRANSCEIVER QUAD THREE-STATE BUS TRANSCEIVER This quad three-state bus transceiver features both excellent MOS

Contextual Info: STB19NB20 N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET TYPE S TB19N B20 . . . . . . Voss 200 V R d S o ii < 0.1 80 Q. Id 19 A TYPICAL R D S (on) = 0.150 £2 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED

STP19NB20

Contextual Info: STP19NB20 STP19NB20FP N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET TYPE V dss RDS on Id STP19N B20 STP19NB20FP 200 V 200 V < 0.1 80 Î2 < 0.1 80 Q 19 A 10 A • . . . . TYPICAL RDS(on) = 0 .1 5 0 ^ EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

Contextual Info: STB19NB20 N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET TYPE V S TB19N B20 • . . . . . dss 200 V R d S o i i < 0.1 80 Q Id 19 A TYPICAL RDS(on) = 0.150 £2 EXTREMELY HIGHdv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED

Si4705

Abstract: bluetooth headphone schematic diagram schematic diagram of bluetooth headphone mp3 Si4705-B20 schematic diagram of bluetooth headphone AN383 fm radio AN388 EPSON FC135 Si4704 AN332 Si471x FM transceiver programming guide
Contextual Info: Si4704/05-B20 E NHANCED B ROADCAST F M R ADIO R ECEIVER FOR P ORTABLE A PPLICATIONS Features         Ordering Information: See page 31. Pin Assignments Si4704/05-GM Applications  Top View  Personal computers  Portable navigation devices

Contextual Info: . Dimensions in mm ISPB20 1 2 6 5 3 4 6.4 7.62 B20 7.62 FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Load Voltage 200V l High Isolation Voltage (3.75kVRMS ) l

Contextual Info: STB10NB20 N - CHANNEL 200V - 0.30Î2 - 1 0A - D2PAK PowerMESH MOSFET TYPE V S TB10N B20 • . . . . . R D S o n Id < 0 .4 0 Q. 10 A dss 200 V TYPICAL R D S (on) = 0.30 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

200v 100mA mosfet

Contextual Info: . Dimensions in mm ISPB20 1 2 6 5 3 4 6.4 7.62 B20 7.62 FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Load Voltage 200V l High Isolation Voltage (3.75kVRMS ) l

Contextual Info: . Dimensions in mm ISPB35 1 2 6 5 3 4 6.4 7.62 B20 7.62 FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Load Voltage 350V l High Isolation Voltage (3.75kVRMS ) l

Contextual Info: . Dimensions in mm ISPB20 1 2 6 5 3 4 6.4 7.62 B20 7.62 FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Load Voltage 200V l High Isolation Voltage (3.75kVRMS ) l

ICE3B2065J

Abstract: surge lightning to smps spark gap IN4148 IC11 spark gap 600v ICE3xxx65J
Contextual Info: Datasheet, Version 2.0, 18 Dec 2007 CoolSET -F3 Jitter Version ICE3 B20 6 5 J Off-Line SMPS Current Mode Controller with integrated 650V Startup Cell/Depletion CoolMOS™ Power Management & Supply N e v e r s t o p t h i n k i n g . CoolSET™-F3 ICE3B2065J

6MBI50J-120

Abstract: F4956 DIODE M4A F495
Contextual Info: This Material Copyrighted By Its Respective Manufacturer 2. 3. Equivalent C irc u it of Module Equivalent C irc u it -04- +o- -OE ,C O GICH G3CH BtO — 630— C50—I C2CHI ' ' C4CH l B20- B40- -O O 1V a E50- -o . gscH Current Control C ircu it - ù w I

Contextual Info: SGS-THOMSON RfflDeiE!<s [l[L[ie,n’[KÌ@RDD S$ STP10NB20 STP10NB20FP N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET V TYPE S TP10N B20 STP10N B20FP • . . . . dss 200 V 200 V R D S(on) Id < 0.4 0 Q. < 0.4 0 Cl 10 A 6 A TYPICAL RDS(on) = 0.3 EXTREMELY HIGH dv/dt CAPABILITY

to-3pl

Abstract: igbt to220 1MBC15-060 1MBH50D-060 1MB30-060 1MB20-060 1MBC05-060 1MBC05D-060 1MBC10D-060 1MBG10D-060
Contextual Info: 22307^5 GGDMODO 70b • s DISCRETE IGBT 600 VOLT, DISCRETE IGBT • 5 - 50 Amps Device Vces Type lc Pc VcE(sat V g e = 15V Cont. Per IGBT Max. lc Watts Volts Amps Volts Amps 1MBC05-060 600 5 1M B C 10-060 600 600 600 : 1M BC15-060 1M B20-060 Switching Time (Max.)

STP19NB20

Contextual Info: STP19NB20 STP19NB20FP N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET . TYPE V dss RDS on Id S TP19N B20 STP19NB20FP 200 V 200 V < 0.1 80 Q. < 0.1 80 Q. 19 A 10 A T Y P IC A L Ros(on) = 0 .1 5 0 £2 . E X T R E M E L Y H IG H dv/dt C A P A B IL IT Y . .

qfn 28 land pattern

Abstract: SI4702 example code S4720 am sw fm radio PCB schematic diagram AN-307 SN45 MPX audio ENCODER Si472x FM transceiver programming guide SI4702
Contextual Info: Si4720/21-B20 B R O A D C A S T FM R A DI O T R A N S C E I V E R F O R P O R TA B L E A P P L I C A T I O N S Features „ „ „ Minimal BOM 15 mm2 „ Digital audio output (Si4721 only) „ Digital audio input „ Adjustable mono/stereo blend „ Adjustable soft mute

Si4721-B20-GM

Abstract: Si472x Si4721 AN383 Si472x FM transceiver programming guide schematics power supply satellite receiver strong AN332 AN388 bluetooth headphone antenna si47xx
Contextual Info: Si4720/21-B20 B R O A D C A S T FM R A DI O T R A N S C E I V E R F O R P O R TA B L E A P P L I C A T I O N S Features „ „ „ Minimal BOM 15 mm2 „ Digital audio output (Si4721 only) „ Digital audio input „ Adjustable mono/stereo blend „ Adjustable soft mute

g60h

Contextual Info: 2. 3. E q u i v a l e n t C i r c u i t of Module +o- E qu i va le nt C i r c u i t -M- -04- .coG1CH G3CH E IO — 830— -OE C50H E50- O _ j j - Current C ontrol C ir c u it . 1V C40H fC G2CHI B20— -O - 4. i G60H I A b s ol u te Maxiaus R a t i n g s

BAI59

Abstract: B40 35-10 IN5345B Diodes In4007 HVR062 IN4007F RF2007 B40C3700-2200 b40c2000 rf2001
Contextual Info: FAGOR ^ NUMERICAL INDEX TRANSIENT VOLTAGE SUPPRESSOR DIODES RECTIFIER DIODES Plastic Case IN4007F. 1N4001F. IN4007 . 1N4001 . P513 . BY 133 . 1N5399 . 1N5391 . RF2007 . RF2001 . BY255 .

NTCGF

Contextual Info: NTC Thermistors Single item NTCDS series Diode lead type NTCGF series (Resin DIP cable type) Issue date: October 2011 • All specifications are subject to change without notice. • Conformity to RoHS Directive: This means that, in conformity with EU Directive 2002/95/EC, lead, cadmium, mercury, hexavalent chromium, and specific