TB10N Search Results

Contextual Info: TB10NB20 N - CHANNEL 200V - 0.30Î2 - 1 0A - D2PAK PowerMESH MOSFET TYPE V S TB10N B20 • . . . . . R D S o n Id < 0 .4 0 Q. 10 A dss 200 V TYPICAL R D S (on) = 0.30 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

TB20N20E

Abstract: MTP30N08M MTD5N08L MTD1N50 MTP40N06M TB20N20 MTP10N10M
Contextual Info: G CASE 314B-02 5 PIN TO-220 S DRAIN CASE 418B-01 o TMOS SENSEFETs D2PAK* SE N S E FE Ts are con ven tion al pow er M O SFETs w ith an option provided to sen se the drain current by m ea surin g a sm all proportion of the total drain Table 11 — Case 418B-01

Contextual Info: : 1 I TKMS; T YP E : 6 A r ms TB£N TB6N TB6N TBPN TB6 N A T j M= : VRRM" " VDRM ! (V) 115°C 6 # 2 3 4 5 6 JUNCTION TEMPERATURE 25°0 :[TSM ; xE ir - tdm ±VfjT 1ilq-j- : ± I H :± vtm 'StxTM “ t jm ! » T .TM max. ! max. 1 max. (A) : ( iTlA) (V) : ImA) : imA) ; ( V )

Contextual Info: MOTOROLA Order this document by TB10N40E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TB10N40E TMOS E-FET™ High Energy Power FET D2 p a k for Surface Mount Motorola Preferred Device TMOS POWER FET 10 AMPERES 400 VOLTS N-Channel Enhancement-Mode Silicon Gate

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Abstract: M143206EVK differences uc3842a uc3842b toshiba satellite laptop battery pinout 2N3773 audio amplifier diagram toshiba laptop battery pack pinout BC413 motorola transistor sj 5812 M68HC705X16 ABB inverter motor fault code
Contextual Info: Introduction Advanced Digital r i Consumer Products L-l Microcomputer Components [2 Logic: Standard, Special p , and Programmable I-5* Analog and Interface Integrated Circuits Semiconductor r= Components Group L5 Product Literature and r~ Technical Training L”