TP19N Search Results

19n06l

Contextual Info: *57 SGS-THOMSON TP19N05L TP19N06L ¡O N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TENTATIVE DATA TYPE . . . . . . . . V dss RDS on Id S TP19N 05L 50 V 0.1 i i 19 A TP19N 06L 60 V 0.1 Si 19 A AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED

Contextual Info: * 5 S T P 1 9 N06 S T P 1 9 N 0 6 FI S G S -T H O M S O N ULKgraMOeS 7 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V TP19N06 S TP19N06FI dss R D S o n Id 60 V 60 V < 0.1 a < 0.1 a 19 A 13 A • TYPICAL RDS(on) = 0.085 Q . AVALANCHE RUGGED TECHNOLOGY

Contextual Info: * 5 SGS-THOMSON ¡[LKgraMOeS 7 TP19N06L TP19N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYP E TP19N 06L S TP19N06LFI V dss RDS on Id 60 V 60 V < 0.1 a < 0.1 a 19 A 13 A • TYPICAL RDS(on) = 0.085 Q . . AVALANCHE RUGGED TECHNOLOGY

STP19NB20

Contextual Info: TP19NB20 TP19NB20FP N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET . TYPE V dss RDS on Id S TP19N B20 TP19NB20FP 200 V 200 V < 0.1 80 Q. < 0.1 80 Q. 19 A 10 A T Y P IC A L Ros(on) = 0 .1 5 0 £2 . E X T R E M E L Y H IG H dv/dt C A P A B IL IT Y . .