siemens 27 s1 diode
Abstract: Marking B23 BBY24 Q62702-B20-S1 Q62702-B22-S1 Q62702-B23-S2 T120 Q62702-B21 3SB05
Contextual Info: SIEM EN S Silicon Tuning Varactors BBY24 . BBY 27 • Abrupt junction tuning diode • Tuning range 120 V Type Marking Ordering Code BBY 24-S1 - Q62702-B20-S1 BBY 25-S1 Q62702-B21 -S1 BBY 26-S1 Q62702-B22-S1 BBY 27-S2 Q62702-B23-S2 Pin Configuration Package1
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24-s1q62702-b20-s125-s1q62702-b21+11eha0700126-s1q62702-b22-s127-s2q62702-b23-s2b235bossiemens 27 s1 diodemarking b23bby24t1203sb05
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BBY24
Abstract: BBY25 BBY26 BBY27
Contextual Info: BBY24, BBY25, BBY26, BBY27 Depletion-layer varactors B B Y 24 through B B Y 27 are epitaxial silico n mesa depletion-layer varactors and are particularly designed for use in m odulation and tuning app licatio ns in the G H z range. The varactors are housed in a m icrow ave case w ith a go ld-p la ted Ni lead
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bby24bby25bby26bby27+1q62702-b
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6953-B
Abstract: 7812A AH413 700201 CV2154 AH370 ML40150 DH 408 diode dmf 612 14094 b
Contextual Info: ML 4000 SERIES EQUIVALENT PARTS LIST The majority o f C.V. register and commercial microwave diodes can be provided depending on demand. M/A-COM Ltd also provides a second source of direct equivalents to other manufacturers devices, the majority o f which are approved for space use. A comprehensive equivalents list is provided below.
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ml40464ml40462ml40461ml4649-30+13ml4650-30ml4649-56ml4650-566953-b7812aah413700201cv2154ah370ml40150dh 408 diodedmf 61214094 b
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IAO5 Sharp
Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
Contextual Info: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The
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q60103-ths10to3530to4600+10iao5 sharpfree transistor equivalent book 2scsiemens transistor asy 27diode bay 61transistor bj 131-6tesla typ 202 thyristorteslaz1072hall effect 21ez1071
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BFT65
Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
Contextual Info: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions
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bft65d1279siemens 1414d1275+6germaniumgermanium drift transistordiode a811siemens halbleitergermanium transistorlegiert
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bby36
Abstract: bby27 BBY24-S1 BBY25-S1 BBY26-S1 BBY27-S2 BBY33DA2 BBY34D BBY35F D035
Contextual Info: SIEMENS AKTIEN 6ESELLS CHA F bGE D Û2 3£b 05 D045M34 b n B IS IE Û Microwave, RF & Tuner Diodes 0 7 -/7 For complete package outlines, refsr to pages PO-1 through PO-6 Hyperabrupt Varactors Maximum Ratings ^R V BBY34D BBY35F BBY36 Characteristics T =25°C
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d045434bby34dbby35fbby36+7bby24-s1bby25-s1bby26-s1bby27bby27-s2bby33da2d035
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bx 18A
Abstract: Y44K bby33
Contextual Info: Microwave, RF & Tuner Diodes For complete package outlines, refer to pages PO-1 through PO-6 PIN Diodes for Professional Applications Type M axim um Ratings BX Y 42 BA-3 BX Y 42 BA-5 B X Y 42 BA-6 BX Y 42 BA-7 B X Y 43A B X Y 43B B X Y 43C B X Y 44K 50 50
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bby24-s126-s127-s233bb2+4bby33dbx 18ay44kbby33
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APY12
Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP
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edition-1978ausgabe-1978bs3934so-26+12ot-114ns371apy12byy32ac176aey26bav77bby20bd545bbav27transistor kt 209 maf367
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