B 3170 Search Results

Contextual Info: SENSITRON SEMICONDUCTOR
 

Technical Data
Data Sheet 3170, Rev.


    


•


  
 


••

  
 

••

   


•
  
 
  

Contextual Info: SENSITRON SEMICONDUCTOR
 

Technical Data
Data Sheet 3170, Rev. A


    


•


  
 


••

  
 

••

   


•
  
 
  

Contextual Info: SENSITRON SEMICONDUCTOR
 

Technical Data
Data Sheet 3170, Rev.


    


•


  
 


••

  
 

••

   


•
  
 
  

b589n

Abstract: B511N information applikation b589 mikroelektronik Heft 12 information applikation mikroelektronik B589nm "Mikroelektronik" Heft aktive elektronische bauelemente ddr applikation heft
Contextual Info: r r j f c n B e le l- f t e n o n f l- t Information Applikation raeo [ n n f l k l n i B ] B l B | < t i n a r * < Information Applikation HEÏI 4 4 : B 5 1 1 N Twnperatur-Sensor-IS B 5 8 9 I Bandgap-Referenzepannungaguelle m KAMMER OER TECHNIK Ebvftuu traft« 2, Frankfurt (Od*r

b3170v

Abstract: B 3170 tda 1006 VEB mikroelektronik spannungsregler b 3170 tda 1083 TDA 1013 A283D tda 1042 b3170
Contextual Info: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N D F E R N S E H E N r a d i o -television AUSGABE: Seite A 1 - 4 1986 Mitteilung aus dem VEB Elektronik Gera 1« Einsatz des Spannungsreglers B 3170 V im Geracord GC 6031 Ab 1/86 wird aur Verbesserung der Gleichspannungsstabilisierung

31-70102-T

Abstract: L910 734A 31-70229-1001 CABLE L910
Contextual Info: BNC 75 ohm Amphenol High Performance Beryllium Copper Outer Contacts Fig. 1 Fig. 2 c• a c• a b b Bulkhead Jack 31-70102-T Plug 31-70228-1001 Fig.3 Fig. 4 c• c• a a b b Plug 31-70227-1001 Plug 31-70229-1001 HIGH PERFORMANCE Description Bulkhead Jack

3165* intel

Abstract: 82360SL intel 80386SL twc np 6001 28f200 tsop intel 28f200bx 28F002BX 28F002BX-B 28F002BX-T 28F200BX
Contextual Info: INTEL CORP HEHORY/PLD/ SbE D • 4fl2bl?b 007bBS3 flTb m i T L Z 0M lF K ß ! ilÄ T 0®If!!] in te l 'T W o 'K V ¿ k 28F200BX-T/B, 28F002BX-T/B 2 MBIT (128K x 16, 256K x 8 BOOT BLOCK FLASH MEMORY FAMILY x8/x16 Input/Output Architecture — 28F200BX-T, 28F200BX-B

DDR200

Abstract: DDR266 DDR266A DDR266B DDR333 hynix module suffix
Contextual Info: 184pin Registered DDR SDRAM DIMMs based on 512Mb B ver. TSOP This Hynix Registered Dual In-Line Memory Module (DIMM) series consists of 512Mb B ver. DDR SDRAMs in 400mil. TSOP II packages on a 184pin glass-epoxy substrate. This Hynix 512Mb B ver. based Registered DIMM series provide

LM 3140

Abstract: LM 3141 x-band diode
Contextual Info: Whp% H E W LE T T mLEM P AC KAR D H erm etic PIN D iodes for Stripline/M icrostrip S w itch es/ A ttenuators 5082.3140 Technical Data 5082-3141 5082-3170 Features • B ro ad b an d O peration HF through X-Band • Low In se rtio n Loss Less than 0.5 dB to 10 GHz

LM 3141

Contextual Info: HEWLETT-PACKARD/ CHPNTS blE » • 4 4 4 ^ J j lieWLETT ^ PA C K A R D H erm etic PIN D iod es for Stripline/M icrostrip S w itch es/ A tten uators 5082.3140 Technical Data 5082-3141 5082-3170 Features • B ro a d b a n d O p e ra tio n HF through X-Band

Contextual Info: ir r ig l PRELIMINARY 2-MBIT 128K X 16, 256K X 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F200BV-T/B, 28F200CV-T/B, 28F002BV-T/B • Intel SmartVoltage Technology — 5V or 12V Program/Erase — 3.3V or 5V Read Operation — Increased Programming Throughput

Contextual Info: 184pin Registered DDR SDRAM DIMMs based on 512Mb B ver. TSOP This Hynix Registered Dual In-Line Memory Module (DIMM) series consists of 512Mb B ver. DDR SDRAMs in 400mil. TSOP II packages on a 184pin glass-epoxy substrate. This Hynix 512Mb B ver. based Registered DIMM series provide

HYMP525P72BP4

Abstract: HYMP512R72BP4-E3 HY5PS12821BFP HYMP525R72BP4-E3 HY5PS12821B
Contextual Info: 240pin Registered DDR2 SDRAM DIMMs based on 512 Mb B ver. This Hynix registered Dual In-Line Memory Module DIMM series consists of 512Mb B ver. DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 512Mb B ver. based Registered DDR2 DIMM

DDR2-400

Abstract: DDR2-533 DDR2-667 HY5PS12821BFP
Contextual Info: 240pin DDR2 VLP Registerd DIMMs based on 512 Mb B ver. This Hynix DDR2 VLP Very Low Profile registered Dual In-Line Memory Module (DIMM) series consists of 512Mb B ver. DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 512Mb B ver.

Contextual Info: 184pin Registered DDR SDRAM DIMMs based on 512Mb B ver. FBGA This Hynix Registered Dual In-Line Memory Module (DIMM) series consists of 512Mb B ver. DDR SDRAMs in 60 ball FBGA package on a 184pin glass-epoxy substrate. This Hynix 512Mb B ver. based Registered DIMM series provide a

HYMP525R72BP4-E3

Abstract: HY5PS12821B HY5PS12821BFP HYMP512R72BP4-E3 HYMP564R72 HY5PS12421B HY5PS12421BFP HYMP
Contextual Info: 240pin Registered DDR2 SDRAM DIMMs based on 512 Mb B ver. This Hynix registered Dual In-Line Memory Module DIMM series consists of 512Mb B ver. DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 512Mb B ver. based Registered DDR2 DIMM

hynix module suffix

Abstract: DDR333 DDR400 DDR400B HYMD512G726BF4N DQSO d431
Contextual Info: 184pin Registered DDR SDRAM DIMMs based on 512Mb B ver. FBGA This Hynix Registered Dual In-Line Memory Module (DIMM) series consists of 512Mb B ver. DDR SDRAMs in 60 ball FBGA package on a 184pin glass-epoxy substrate. This Hynix 512Mb B ver. based Registered DIMM series provide a

Contextual Info: ONIF^IRIMlAirOON in te i 28F200BX-T/B, 28F002BX-T/B 2 MBIT 128K x 16, 256K x 8 BOOT BLOCK FLASH MEMORY FAMILY x8/x16 Input/Output Architecture — 28F200BX-T, 28F200BX-B — For High Performance and High Integration 16-bit and 32-bit CPUs x8-only Input/Output Architecture

MPF521

Contextual Info: 'MOTOROLA S C -C X S T R S / R F > 4b D E '^b B ^B SM □DSllaTM 2 § ~ 0 "T- 3 l-cP.S' MOTOROLA MPF521 SEMICONDUCTORS K J P.O. BO X 20912 • PHOENIX, A RIZO N A 85036 N -C H A N N E L DUAL G ATE D O U B LE -D IF FU SE D M ETA L O X ID E F IE LD -E FF E C T

k 4431

Contextual Info: in te i 28F200BX-T/B, 28F002BX-T/B 2 MBIT 128K x 16,256K x 8 BOOT BLOCK FLASH MEMORY FAMILY x6/x16 Input/Output Architecture — 28F200BX-T, 28F200BX-B — For High Performance and High Integration 16-bit and 32-bit CPUs Very High-Performance Read — 60/80 ns Maximum Access Time

D-P5DW

Abstract: 10 35L W1 double acting cylinder 10 35L CAP CDQ2B63 D-J79W ya10 THREAD ROD 11-CQ2 CQ2B16-PS
Contextual Info: Compact Cylinder: Standard Type Double Acting, Single Rod Series CQ2 ø12, ø16, ø20, ø25, ø32, ø40, ø50, ø63, ø80, ø100 How to Order Without auto switch With auto switch CQ2 B 20 30 D CDQ2 B 20 30 D J79W S Built-in magnet Ȝ Ȝ Mounting style Ȝ B Through-hole Standard F Rod side flange style

LP2213

Abstract: PJ3019 LP2213H-8PIN pj30 Delta Electronics TRANSFORMERS 316366 ep1706h POT1408
Contextual Info: Standard Bobbin Type of Magnetics Transformers EFD3009H-12PIN 316823 EPC1906H-10PIN (316656) A A 20.4 B B 0.7 G 12.2 SQ0.64 G F F E 1 E 1 UNIT : mm A = 13.5 MAX B = 4.0 0.5 C = 16.2 0.3 D = 20.5 MAX E = 3.7 0.3 F = 14.8 0.3 G = 21.0 MAX H = 2.5 0.3 I = 12.5 0.3

MRF580

Abstract: MRFC581 ic tms 1000 MRF580A MRFC581A A581 2771 17t Motorola 581
Contextual Info: 4bE D MOTOROLA SC C X ST R S /R F • MOTOROLA b 3 b ? 2 S 4 O G W Ô b S ■ flOTb ~P -3 V O S ■ SEMICONDUCTOR MRF580,A MRF581,A MRFC581,A TECHNICAL DATA The R F Line NPN SILICON HIGH FREQUENCY TRANSISTORS . . . designed for high current low power am plifiers up to 1.0 GHz.

diode E1110

Abstract: lN4002 LN4003 ANA 618 20010 TDB 0123 km b3170 E1110 Diode UB8560D MAA723 moc 2030
Contextual Info: elektronik-bauelem ente I WT VD AVL 1 /8 7 Bl. 2 E r l ä u t e r u n g e n z u m I n h a l t und zu d e n A n g a b e n d e r B a u e l e m e n t e - V e r g l e i c h s l i s t e D ie B a u e l e m e n t e - V e r g l e i c h s l i s t e e n t h ä l t a l l e in d e r B i l a n z v e r a n t w o r t u n g d e s V E B K o m b i n a t