AVW SMD Search Results

AVW smd

Contextual Info: Honeywell Military & Space Products 5 MEGABIT MEMORY MODULE HX84050 RADIATION OTHER • • Listed on SMD #5962-96840 Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 jim Process (Lett = 0.6 jxm) • Total Dose Hardness through 1x10 rad (S i0 2)

TDA4819

Contextual Info: bOE i m 4S35bOS 005G077 725 « S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF - P S 8 - U Power Factor Controller PFC - 3 I TDA 4815; TDA 4818; TDA 4819 IC for High Power Factor and Active Harmonic Filtering Advance Information Bipolar IC Features • Power factor approaching 1

SMD W2f

Abstract: flyback transformers AVX film chip capacitors CAPACITOR Tantalum 2906 flyback bf taiwan lt 6249 120U capacitors BF AVX smd film capacitors CF
Contextual Info: j à m i A KYOCERA GROUP COMPANY Product Guide for_ appiications EDP /à\ W < A KYOCERA GRCXJP COMPANY The Complete list of Application Guides available: Automotive Consumer EDP High Rel and Mi 1itary Industrial Mobile Communications Miscellaneous Products

UN45

Contextual Info: STK11C68-M SlfTlTEH CMOS nvSRAM High Performance 8K x 8 Nonvolatile Static RAM MlL-STD-883/SMD # 5962-92324 FEATURES 30,35,45 and 55ns Access Times 15,20 and 25ns Output Enable Access Unlimited Read and Write to SRAM Software STORE Initiation Automatic STORE Timing

Contextual Info: Honeywell Military & Space Products Preliminary 128K x 8 STATIC RAM—Low Power SOI HLX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.6 j^m Low Power Process (Leff= 0.45 |im) • Read/Write Cycle Times < 17 ns (Typical)

Contextual Info: STK11C68-M CMOS nvSRAM High Performance 8K x 8 Nonvolatile Static RAM MIL-STD-883/SMD # 5962-92324 S lflìT E H DESCRIPTION FEATURES 35,45 and 55ns Access Times 17, 20 and 25ns Output Enable Access Unlimited Read and Write to SRAM Software STORE Initiation

Contextual Info: böE D SINTEK CORP • ÖE74flfl7 00D03S0 33Ö H S I K STK10C68-M CMOS nvSRAM High Performance 8K x 8 Nonvolatile Static RAM MIL-STD-833/SMD 5962 - 93056 SIIÏITEK FEATURES DESCRIPTION 3 0 ,3 5 ,4 5 and 55ns A c c e s s Tim es 1 5 ,2 0 and 25ns O u tp u t E nable A cce ss

NSL 32 equivalent

Abstract: AVW smd AVW smd transistor
Contextual Info: Honeywell Aerospace Electronics Advance Information 512K x 8 STATIC RAM—SOI HX6408 FEATURES RADIATION OTHER • • Read/Write Cycle Times < 20 ns, 3.3 V , 0 to 80°C < 25 ns, (3.3 V), -55 to 125°C Fabricated with RICMOS V Silicon On Insulator (SOI) 0.35 [im Process (Left = 0.28 |im)

Contextual Info: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS'“ IV Silicon on Insulator SOI 0.75 (am Process (Lel(= 0.6 |am) • Read/Write Cycle Times < 17 ns (Typical) < 2 5 ns (-55 to 125°C)

AVW smd

Contextual Info: MOTOROLA f f i M SC O T O {NEflORY/ASI R O L A bSE D b 3 t ? a s i ELECTRICALLY TESTED PER: MPG62995A The 62995A is a 262,144 bit latched address static random access memory organized as 16,384 words of 16 bits, fabricated using Motorola’s high-performance silicon-gate CMOS technology. The device integrates a 16K

AVW smd

Contextual Info: LX8585/8585A Low 4.6A I n f i n i t e P o w e r o I n n o v a t i o n f P D ro p o u t Positive Adjustable R e g u la to r D r o d u c t i o n DESCRIPTION KEY T h e L X 8 5 8 5 /8 5 A a r e lo w d r o p o u t t h r e e t h e r m a l lim i t i n g te rm in a l a d ju s ta b le re g u la to rs w ith a m in i­

Contextual Info: ca WF128K32-XXX5 WHITE /M ICRO ELECTRO N ICS 128Kx32 5V FLASH MODULE, SMD 5962-94716 FEATURES • A c c e s s Tim es of 60, 70, 9 0 , 1 2 0 and 150 n s ■ ■ Pa ckaging ■ Comm ercial, Industrial and M ilita ry Tem perature R a n ge s ■ 5 Volt Program m ing. 5V ± 1 0 % Supply

Contextual Info: Device Specifications SIEM ENS 10 Device Specifications 10.1 Absolute Maximum Ratings Ambient temperature under bias 7^ . Storage temperature (rST). Voltage on Vcc pins with respect to ground (Vss) Voltage on any pin with respect to ground (Fss) .

Contextual Info: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 p.m Process (Leff= 0.6 p,m) • Listed On SMD#5962-95845 • Total Dose Hardness through 1x106rad(Si02)

Contextual Info: STK11C68 CMOS nvSRAM High Performance 8K x 8 Nonvolatile Static RAM S lfTITE K FEATURES DESCRIPTION • • • • • • • • • • • • • The Simtek STK11C68 is a fast static RAM 25,30,35, 45ns , with a nonvolatile electrically-erasable PROM

acy smd

Abstract: C505C safc505 5v4 tube C505 SAB-C505 SAF-C505 SAH-C505 SAK-C505 SAKC505
Contextual Info: Device Specifications C505 / C505C S IE M E N S 10 10.1 Device Specifications Absolute Maximum Ratings Ambient temperature under bias TA . - 40 'C to + 125 "C Storage temperature (TsT). - 65 "C to + 150 "C

ELH0032CG

Abstract: LH0032
Contextual Info: ELANTEC INC Tô l& m t e c HIGH PERFORM ANCE ANALOG INTEGRATED CIRC U ITS Ì0 3 2 /J Fast Operational Ampli W 3 2 C F e a tu re s G eneral D e s c rip tio n • 500V/jìs slew rate The ELH0032/ELH0032C is a \h ig h h i^ h in p u t im ­ p ed a n ce differential o p e ra tio n a K a m p fe g r s t a b l e rqr diverse

Contextual Info: Military Standard Products UT7156 Radiation-Hardened 32K x 8 SRAM Advanced Data Sheet M I C R O E L E C T R O N I C March 1997 systems FEATURES □ □ □ □ □ □ □ □ □ □ INTRODUCTION 40ns, 55ns, and 70ns maximum address access time Asynchronous operation for compatibility with industrystandard 32K x 8 SRAM

Contextual Info: SIMTEK CORP böE D 0274007 D Q 0 0 3 m 32S ISIK STK10C68 CMOS nvSRAM High Performance 8K x 8 Nonvolatile Static RAM S IÌTÌTE H FEATURES DESCRIPTION 25,30,35 and 45ns Access Times 12,15,20 and 25ns Output Enable Access Unlimited Read and Write to SRAM Hardware STORE Initiation

5962-8868301YX

Abstract: 175C GDFP2-F28 GDIP1-T28 5962-8868302YX P4C163L-45CMB
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA Added devices 04-06. Updated drawing with boilerplate paragraphs. Editorial changes throughout, ksr_ APPROVED 1997 AUG 25 Raymond Monnin REV SHEET REV SHEET 15 16 17 REV STATUS OF SHEETS

Contextual Info: Honeywell Preliminary Military & Space Products 128K x 8 STATIC RAM— Low Power SOI HLX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS'“ IV Silicon on Insulator SOI 0.6 nm Low Power Process (Lef)= 0.45 (im) • Read/Write Cycle Times < 17 ns (Typical)

QML-38535

Abstract: 65643ARH
Contextual Info: REVISIONS DATE DESCRIPTION LTR Changed the maximum Operating Supply Current, and Enable Supply Current parameters o f Table I for radiation level, ksr_ APPROVED YR-M O-DA 98-10-02 Raymond Monnin REV SHEET REV SHEET 15 16 17 REV STATUS OF SHEETS

SMD MARKING CODE E2H

Abstract: SMD MARKING CODE E4H marking code C1H SMD Q67120-C991 SAB-C501-L24N Siemens SAB-C501 siemens sm2 c947 smd marking b4h C501
Contextual Info: SIEMENS 8-Bit CMOS Microcontroller C501 Preliminary • • • • • • • • • • • Fully compatible to standard 8051 microcontroller Versions for 12/24/40 MHz operating frequency 8 K x 8 ROM C501 -1R only 256 x 8 RAM Four 8-bit ports Three 16-bit Timers / Counters (Timer 2 with Up/Down Counter feature)

5962-8506401MQX

Abstract: 8506401XX 5962-8506401MXX 8506401QX 5962-8506403 527H 5962-8506402 AU-AIS vcr 2020 80C51BH
Contextual Info: MIL-M-38510/85064 REVISIONS DATE YR-MO-DA DESCRIPTION LTR Changed from DESC to military drawing format, revise table I, editorial changes throughout. 1987 Mar 23 Change 1.4. 67268. 1987 Aug 3 Add vendor CAGE 18324. Change drawing CAGE to Add case Y. Change vendor part number.