AVEL Search Results

Contextual Info: TEMIC TCSS1100/2100 S e m i c o n d u c t o r s Transmissive Optical Sensor Description T his device has a com pact construction where the em itting-light sources and the detectors are located face to face o n the sam e optical axes. T he operating w avelength is 950 nm. The detector consists of a

K6650

Abstract: OP245A OP245B OP245C OP245D OP555 OP565
Contextual Info: 0 .O P IE K Product Bulletin OP245A June 1996 GaAIAs Plastic Infrared Emitting Diodes Types OP245A, OP245B, OP245C, OP245D Features • Mechanically and spectrally matched to the O P555 and OP565 series devices • W avelength matched to silicon’s peak

Contextual Info: UNCONTROLLED DOCUMENT 7 ,8 0 PIN PART NUMBER REV. LD S -A 41 2 B I- S U G 4,75±0,75 [0,187±0,030] [ 0 ,3 0 7 ] 14 E LE C T R O -O P T IC A L CHARACTERISTICS Ta = 25 'C 19,00 [ 0 ,7 4 8 ] 15,24 PARAM ETER [ 0, 6001 MIN TYP PEAK W AVELENGTH UNITS 2.6 Vf 5.0

SSL-LX305F4YD

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. S S L - L X 3 0 5 F 4 Y D —1 2V 0 3 .0 0 [ 0 0 ,1 1 8 ] ELEC TRO -O P TIC AL CHARACTERISTICS Ta =25'C PARAM ETER TYP PEAK W AVELENGTH 585 R EV ER S E V O LTAG E 1.0 0 r \ UNITS 1 4 ,0 5.0 Vf AXIAL INTENSITY 30 Vr mcd

alphanumeric 14 segment display 16 pin

Contextual Info: PART NUMBER 0 LDS —E 3 9 0 2 R I UNCONTROLLED DOCUMENT REV. E.C.N. NUMBER AND REVISION COMMENTS E L E C T R O -O P T IC A L CHARACTERISTICS Ta = 2 5 'C MIN P EAK W AVELENGTH REVERSE VOLTAGE 20.32 [0.800] 24.00 [0.945] TYP lf = 1 DmA MAX UNITS 565 G R EEN )

SSL-LX509F3SRD

Contextual Info: DRAWING NUMBER REV SSL-LX509F3SRD C ELECTRO -O PTICAL CHARACTERISTICS TA = 2 5 PARAM ETER MIN TYP M AX P E A K W AVELENGTH 66 0 RED FORW ARD VO LTAGE 1.7 2.2 R E V ER S E VO LTAG E VIEWING ANG LE v f vr I r = 1 OOuA m cd I f =20m A 1 60 2x theta E PO X Y LENS FINISH:

ecg3100

Abstract: transistor p26 ECG3102 3102 TRANSISTOR ecg 100 transistor ECG3033 ECG3101 transistor p58 ECG3104 diagram DARLINGTON
Contextual Info: Infrared Detector Diodes E C G Type Description ECG3033 Infrared PIN Detector Diode Reverse Voltage V r [V M ax. D ark Current ID nA) M in Light Current IL(A<A) Pow er Dissipation P D Im W I Rise Time tr (nS) Typ Detection A n g le Typ Detection W avelength

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. SSL—LX3353SID ELE C T R O —O PTICAL CHARACTERISTICS Ta = 25‘ C I— PARAM ETER 3,00 [0,118] MIN PEAK W AVELENGTH 3.00 [ 0. 118] - 3 .8 0 [ 0 .150 ] 4.60 I [ 0. 181] 1.00 1.10 [0 .0 4 3 ] 1 [ 0 .0 3 9 ] MAX, l f= 2 0 m A

Contextual Info: UNCONTROLLED DOCUMENT 0 3 .4 0 PART NUMBER REV. S S L — LX30FT14S0D [0 0 1 3 4 ] + E L E C T R O -O P T IC A L CHARACTERISTICS Ta = 2 5 T PARAM ETER PEAK W AVELENGTH 03.00 [00.118: R EV ER S E V O LTAG E 1 1 .0 0 J 1,20 [0 .0 4 7 ] [ 0 .0 3 9 ] M AX. o TYP

SSL-LX306F4SIC

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. S S L-L X 3 06 F 4 S IC 03.40 [00.134] E L E C T R O -O P T IC A L CHARACTERISTICS Ta = 2 5 T + PARAM ETER MIN PEAK W AVELENGTH i UNITS 2 .0 TEST CÛND nm 2 .5 Vf Vr Ir = 1 0O/uA AXIAL INTENSITY 1000 mcd If = 20mA VIEWING A N G LE

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. SSL-LX3353SOD E L E C T R O - O P T I C A L C H A R A C T E R IS T IC S Ta = 25 ‘ C I— PAR AM ETER 3,00 [0,118] MIN P EA K W AVELEN G TH 3.00 [ 0. 118] 3 .8 0 - [ 0 .150 ] 4.60 I [ 0. 181] 1.00 1.10 [0 .0 4 3 ] 1

Contextual Info: UNCONTROLLED DOCUMENT 4,00 [0 .1 5 7 ] PART NUMBER REV. SSL—LX3T453SYD 3,00 CO.118] E L E C T R O -O P T IC A L CHARACTERISTICS Ta = 25‘ C 4,50 [0 ,1 7 7 : PARAM ETER MIN PEAK W AVELENGTH f FORW ARD V O LTAG E 5 .7 0 [0 .2 2 4 ] R EV ER S E V O LTAG E

Contextual Info: UNCONTROLLED DOCUMENT REV, A 0 3 .4 0 PART NUMBER REV. S S L — LX30FT1 4SRD A E.C.N. NUMBER AND REVISION COMMENTS E.C.N. #10BRDR. & REDRAWN IN 3D. DATE 4.20.01 [0 0 1 3 4 ] + E L E C T R O -O P T IC A L CHARACTERISTICS Ta = 2 5 T PARAM ETER PEAK W AVELENGTH

Contextual Info: UNCONTROLLED DOCUMENT REV, A PART NUMBER REV. S SL —LX3ARG4SYC A E.C.N. NUMBER AND REVISION COMMENTS E.C.N. #10BRDR. & DATE REDRAWN IN 3D. 4 .1 0 .0 1 0 3 .4 0 [0 0 .1 3 4 ] E L E C T R O -O P T IC A L CHARACTERISTICS Ta = 2 5 T PARAM ETER MIN PEAK W AVELENGTH

Contextual Info: UNCONTROLLED DOCUMENT REV. PART NUMBER SSL-LX306F40D 03.40 [00.134] E L E C T R O -O P T IC A L CHARACTERISTICS Ta = 2 5 T + PA R A M ET[R MIN PEAK W AVELENGTH i UNITS TEST CÛND nm 2 .0 2 .5 Vf Vr Ir = 1 0O/uA AXIAL INTENSITY 30 mcd If = 20mA VIEWING A N G LE

Contextual Info: UNCONTROLLED DOCUMENT 03,20 [00,126] PART NUMBER SSL—LX3044LSRD 0 2 .9 0 [0 0 .1 1 4 ] ELECTRO-OPTICAL CHARACTERISTICS Ta = 25 T PARAM ETER MIN PEAK W AVELENGTH R EV ER S E V O LTAG E TVP 1 .7 5X i 2 .2 60 1.0 J 1 .0 0 [ 0 ,0 3 9 : VIEWING A N G LE SI 1.00 C0.039: _ f

SSL-LX2583USBD

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. S S A - L X B 1 01 USBD 2 .0 0 [0 ,0 7 9 : E L E C T R O - O P T I C A L C H A R A C T E R IS T IC S T A = 2 5 X PAR AM ETER MIN P EA K W AVELEN G TH 1,5 0 5.50 [0 .2 1 7 ] 10 PL S. [ 0 , 0 5 9 ] — I I— M AX 4-70

Contextual Info: Si PIN Photodiodes 2 Dim ensional Type No. Active Area Effective Size Activo Arca (mm) (mm2) Package O utline (P.49,50) Peak Spectral Response Sensitivity W avelength Range Ap A (nm) Ap S2506-04 2 .7 7 X 2 .7 7 a t\ 7.7 0.37 960 800 to 1100 920 320 to 1060

to56

Contextual Info: 830 nm single mode 50 mW laser in TO-56 ML1545 OVERVIEW C C C C C C C C C M L 1 5 4 5 i s a s i n g l e t r a n s v e r s e m o d e F a b ry - P e r o t l a s e r c h i p i n a T O - 5 6 can. Th e laser delivers 50 mW o utput power at the w avelen gth of 830 nm. The produ ct is desig ned for CW o peratio n with a low fast axis

S3588-01

Abstract: S3590-01 S2744-01 S2744
Contextual Info: Large-area Si PIN Photodiodes P h o to S e n s itiv ity S T y p . T ype N o. R e m a rk s O u t* ’ lin e W in d o w * 2 M a te r ia l A c tiv e * 3 A re a S p e c tr a l R esponse R ange m m (n m ) Peak S e n sitivity W avelength Ap (n m ) 3 20 to 1060

LSC26XX

Abstract: LSC2644 edfa 1550 tec driver peltier
Contextual Info: That mL'fim PHEWLETT ACKARD DWDM 1.25 Gb/s DFB Laser Module with Integral Optical Isolator Technical Data LSC26XX Features D escription • Center W avelength betw een 1528 nm and 1602 nm • E xtended W avelengths for u se in system s requiring no am plifiers

NKT7512

Contextual Info: Optoelectronic Devices Light Emitting Diodes C h ara cte ristics <9> 2 5 ° C M axim um ratings Type T amb= 2 5 ° C N K T 7001 N K T 7011 y RM V XF M pt o t w V F UF V m A ) 1/? mA 5 .0 3 .0 10 00 50 0 .1 5 0.1 < 1 .5 < 2 .3 50 (20) — Peak W avelength A

L14F1 PHOTOTRANSISTOR

Abstract: 2n5777 phototransistor Phototransistor L14F1 H11A1-H11A2 4n26 opto isolator l14f1 L14F1 npn photo transistor L14H2 H11A2 H15A1
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS GE TYPE PAG E NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E MAX. M IN . M A X . P E A K E M IS S IO N W AVELENG TH T IM E T IM E Vp @ Pd PO@ lp = 1 0 0 m A lp = 100m A TYP. n. M E T E R S TYP. n. SEC. TY P. n. SEC . mW

Contextual Info: Panasonic Phototransistors PN109L Silicon NPN Phototransistor For optical control systems • Features • H igh sensitivity : I Ce l = 3-5 mA (min.) (at L = 100 lx) • Built-in filter to cutoff visible light for reducing am bient light noise • Peak sensitivity w avelength matched with infrared light emitting