S2744 Search Results

Contextual Info: Si PIN photodiode S2744/S3588-08, -09 Large active area Si PIN photodiodes Features Applications Sensitivity matching with BGO and CsI TI scintillators Scintillation detectors High quantum efficiency (Unsealed type): QE=85 % (λ=540 nm) Hodoscopes Low capacitance

Contextual Info: Si PINフォトダイオード S2744/S3588-08, -09 大面積Si PINフォトダイオード 特長 用途 BGOCsI TI シンチレータに適した感度 高量子効率 (未封止タイプ): QE=85 % (λ=540 nm) シンチレーション検出 低容量 TOFカウンタ

S2744-08

Abstract: S2744-09 S3588-08 S3588-09
Contextual Info: PHOTODIODE Si PIN photodiode S2744/S3588-08, -09 Large area sensors for scintillation detection Features Applications ● Higher sensitivity and low dark current than conventional type ● Sensitivity matching with BGO and CsI TI scintillators ● High quantum efficiency QE=85 % (λ=540 nm)

Contextual Info: PHOTODIODE Si PIN photodiode S2744/S3588-08, -09 Large area sensors for scintillation detection Features Applications ● Higher sensitivity and low dark current than conventional type ● Sensitivity matching with BGO and CsI TI scintillators ● High quantum efficiency QE=85 % (λ=540 nm)

Contextual Info: Si PIN photodiode S2744/S3588-08, -09 Large active area Si PIN photodiodes Features Applications Sensitivity matching with BGO and CsI TI scintillators Scintillation detectors High quantum efficiency (Unsealed type): QE=85 % (λ=540 nm) Hodoscopes Low capacitance

S2744-08

Abstract: S2744-09 S3588-08 S3588-09
Contextual Info: PHOTODIODE Si PIN photodiode S2744/S3588-08, -09 Large area sensors for scintillation detection Features Applications ● Higher sensitivity and low dark current than conventional type ● Sensitivity matching with BGO and CsI TI scintillators ● High quantum efficiency QE=85 % (λ=540 nm)

scintillator

Abstract: S2744-08 S3588-08
Contextual Info: PHOTODIODE Si PIN photodiode S2744/S3588-08 Large area sensors for scintillation detection Features Applications ● Higher sensitivity and low dark current than conventional type ● Sensitivity matching with BGO and CsI TI scintillators ● High quantum efficiency QE=85 % (λ=540 nm)

Contextual Info: PHOTODIODE Si PIN photodiode S2744/S3588-08, -09 Large area sensors for scintillation detection Features Applications ● Higher sensitivity and low dark current than conventional type ● Sensitivity matching with BGO and CsI TI scintillators ● High quantum efficiency QE=85 % (λ=540 nm)

S2744-08

Abstract: S2744-09 S3588-08 S3588-09 PIN photodiode 420 nm
Contextual Info: PHOTODIODE Si PIN photodiode S2744/S3588-08, -09 Large area sensors for scintillation detection Features Applications ● Higher sensitivity and low dark current than conventional type ● Sensitivity matching with BGO and CsI TI scintillators ● High quantum efficiency QE=85 % (λ=540 nm)

A7s TRANSISTOR

Abstract: Transistor a7s
Contextual Info: ^ Tex as In s t r u m e n t s CD4001B , CD4002B, C D 4025B Types Data sheet acquired from Harris Sem iconductor S C H S015 CMOS NOR Gates Features: • Propagation delay time = 60 ns typ. at C(_ = 50 pF, V d d = 1 0 V ■ Buffered inputt and outputs » Standardized symmetrical output characteristics

S3588-01

Abstract: S3590-01 S2744-01 S2744
Contextual Info: Large-area Si PIN Photodiodes P h o to S e n s itiv ity S T y p . T ype N o. R e m a rk s O u t* ’ lin e W in d o w * 2 M a te r ia l A c tiv e * 3 A re a S p e c tr a l R esponse R ange m m (n m ) Peak S e n sitivity W avelength Ap (n m ) 3 20 to 1060

near IR photodiodes

Abstract: S8745-01 S8558
Contextual Info: Selection guide - February 2014 Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation HAMAMATSU PHOTONICS K.K. S i P h o t o d i o d e Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation Si photodiode package •··················································· 5

S2973-01

Abstract: S3590-01 S5573 S6775 S1223 S1223-01 SS077 S3590 S5077 S6968
Contextual Info: Si PIN Photodiodes 1 Dimensional Outline Type No. (P.46)/ Window Material ‘ 1 S5821 Active E f f e c t iv e Package ¡Area Size (mm) s Pe c tra l Response Range Area x ! xp (mm2) (nm) ¡ (nm) Short Circuit Current Photo Sensitivity S (A W ) T Peak Active

P4950

Contextual Info: Si PIN Photodiodes 5 Type No. I Dimensional Outline (P.49, 50)/ Window Material *1 Package (mm) S5106 /R Ceramic S5107 @ /R Chip-carrier 57509 ; ; Active Effective j Active Area Size; Area ! 5 x 5 10 x 10 j : 2xio ® r ; (mm2) Spectral Response Range

Contextual Info: HARRIS CMOS Quad Exclusive-OR and Exclusive-NOR Gates High-Voltage Types 20-Volt Rating CD4070B — Quad Exclusive-OR Gate CD4077B — Quad Exclusive-NOR Gate • CD4070B contains fo u r independ­ ent Exclusive-OR gates. The RCA-CD4077B contains gates.

S8558

Contextual Info: セレクションガイド 2014.5 Siフォトダイオード 紫 外 ~ 近 赤 外 域 放 射 線 に 対 応した ラ イ ン アップ Si PHOTODIODE S i P h o t o d i o d e Siフォトダイオード 紫 外 ∼ 近 赤 外 域 、放 射 線 に 対 応した ラ イ ン アップ

Contextual Info: Si PIN Photodiodes 4 Type No. Dimensional Outline (P.47)/ Window Material Package Active Area Effective Size Active Area (mm) (mm2) 25 S5106 @/R Ceramic 5X5 S5107 ® /R Chip-carrier 10X10 100 S3590-01 S3590-08 ® /R S3204-08 @/R S3584-08 S3588-08 Photo Sensitivity S Typ. (A/W)

Contextual Info: Large-area Si PIN Photodiodes Type N o. R e m a rk s O u t-*1 line W in d o w *2 M a te ria l A c tiv e *3 A re a S p e c tra l R esponse R ange 300 f i m Wafer Thickness Types 10 x 10 mm active area S3590-08 o 10 x 10 10 x 20 mm active area 10 X 20 S3204-08

LED superbright

Contextual Info: LED Outdoor Lamp Cluster Absolute Maximum Ratings DEVICE SUPERBRtGHT BRIGHT SilPERBRIGHT BRIGHT SUPERBRtGHT BRIGHT SUPERBRIGHT BRIGHT SUPERBRIG HT BRIGHT RED GREEN RED OREEN RED GREEN RED GREEK RED GREEN PART NUMBER CONTINUOUS POWER DISSIPATION CSL- FORWARD

D4518

Abstract: cd4520b C04520
Contextual Info: HARRIS CD4518B, CD4520B Types CMOS Dual Up-Counters High-Voltage Types 2 0 -V o lt Rating Features: • Medium-speed operation — C D 4 5 1 8 B Dual BCD U p-Counter C D 4520B Dual Binary Up-Counter 6 -M H z typical clock frequency at 10 V ■ Positive- or negative-edge triggering

transistor RCA 394

Abstract: CD4519BE cmos 4061 cd45198 CD4519B ICAN-6525 RCA transistor 394 jedec MS-001-AC RCA SOLID STATE 78 mo 5
Contextual Info: It C S ' 7 e- A - is fi il' y' f \ - V OS II :v> fl-'- 000828 CD4519B Types RAM ? £ c n CMOS Logic ICs CMOS 4-Bit AND/OR Selector, Quad 2-Channel Data Selector, or Quad Exclusive NOR Gate H igh-V oltage Types 20-Volt Rating FU N C TIO N A L DIAGRAM Features:

Contextual Info: C04585B Types CMOS 4-Bit Magnitude Comparator High Voltage Types 2 0 -V o lt Rating The R CA-CD4585B is a 4 -b it magnitude com ­ parator designed fo r use in com puter and logic applications th a t require the comparison o f tw o 4 -b it words. This logic c irc u it deter­

GaP photodiode APD

Abstract: uv photodiode, GaP GaP photodiode PIN S-4036 UV photodiode PIN Photodiode S3590 GaP photodiode schottky photodiode
Contextual Info: Index by Type No Type No. Name Page S1087. .Si Photodiode Visible/Visible to IR Range, tor General Photometry . 22, 23 S1087-01 . .Si Photodiode (Visible/Visible to IR Range, for General Photometry). 22, 23

photodiode

Abstract: schottky photodiode uv photodiode, GaP GaP photodiode APD Si PIN PHOTODIODE uv photodiode Si apd photodiode 800 nm GaP photodiode PIN 38 PHOTODIODE
Contextual Info: Index by Type No. Type No. Name Page S 1087. .Si Photodiode Visible/Visible to IR Range, for General Photometry . . 22, 23 S 1087-01 . .Si Photodiode (Visible/Visible to IR Range, for General Photometry). 22, 23