AVALANCHE RUGGED TECHNOLOGY Search Results

STP6N60FI

Contextual Info: STP6N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP6N60FI • ■ ■ ■ ■ VDSS R DS on ID 600 V < 1.2 Ω 3.8 A TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED

STD2N50

Contextual Info: STD2N50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD2N50 • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 500 V < 5.5 Ω 2A TYPICAL RDS(on) = 4.5 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED

STD3N30

Contextual Info: STD3N30 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD3N30 • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 300 V < 1.4 Ω 3A TYPICAL RDS(on) = 1.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED

STP20N06

Abstract: STP20N06FI
Contextual Info: STP20N06 STP20N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP20N06 STP20N06FI VDSS R DS on ID 60 V 60 V < 0.085 Ω < 0.085 Ω 20 A 13 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

STD3N30L

Contextual Info: STD3N30L N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS R DS on ID STD3N30L 300 V < 1.4 Ω 3A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 1.15 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED

STD4N25

Contextual Info: STD4N25 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE STD4N25 • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 250 V < 1.1 Ω 4A TYPICAL RDS(on) = 0.7 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED

Contextual Info: * 7/ SGS-THOMSON ilLiCTWDe STB5NA80 N - CHANNEL ENHANCEMENT MODE _POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STB5NA80 V dss RDS on Id 800 V < 2.4 Í2 4.7 A . . . . . . . TYPICAL RDs(on) =1.8 ft AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

IRFBC30

Abstract: IRFBC30 150 E 4315A
Contextual Info: IRFBC30 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRFBC30 • ■ ■ ■ ■ V DSS R DS on ID 600 V < 2.2 Ω 4.3 A TYPICAL RDS(on) = 2 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED

STD9N10L

Contextual Info: STD9N10L N - CHANNEL 100V - 0.22Ω - 9A IPAK/DPAK POWER MOS TRANSISTOR TYPE V DSS R DS on ID STD9N10L 100 V < 0.27 Ω 9A TYPICAL RDS(on) = 0.22 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC HIGH CURRENT CAPABILITY

Contextual Info: STK4N30 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STK4N30 • ■ ■ ■ ■ V DSS R DS on ID 300 V < 1.4 Ω 4.2 A TYPICAL RDS(on) = 1.2 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED

MTP6N60

Abstract: MTP6N6 12 v smps
Contextual Info: MTP6N60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE MTP6N60 • ■ ■ ■ ■ V DSS R DS on ID 600 V < 1.2 Ω 6.8 A TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED

STP3N100

Abstract: STP3N100FI
Contextual Info: STP3N100 STP3N100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP3N100 STP3N100FI • ■ ■ ■ ■ ■ VDSS R DS on ID 1000 V 1000 V <5Ω <5Ω 3.5 A 2A AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

MTP6N6

Abstract: MTP6N60
Contextual Info: MTP6N60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE MTP6N60 • ■ ■ ■ ■ VDSS R DS on ID 600 V < 1.2 Ω 6.8 A TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED

STD17N05

Abstract: STD17N06
Contextual Info: STD17N05 STD17N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS R DS on ID STD17N05 50 V < 0.085 Ω 17 A STD17N06 60 V < 0.085 Ω 17 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

STD3N30

Contextual Info: STD3N30 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD3N30 • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 300 V < 1.4 Ω 3A TYPICAL RDS(on) = 1.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED

STD3N25

Contextual Info: STD3N25 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD3N25 • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 250 V <2Ω 3A TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED

MTP6N60

Contextual Info: MTP6N60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE MTP6N60 • ■ ■ ■ ■ V DSS R DS on ID 600 V < 1.2 Ω 6.8 A TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED

70572

Abstract: bipolar transistor tester SMP30N10 "Integrated Technology corporation" AN601 RPKC MOSPOWER Design Data Book 1983 uis test
Contextual Info: AN601 Vishay Siliconix Unclamped Inductive Switching Rugged MOSFETs For Rugged Environments The evolution of the power MOSFET has resulted in a very rugged transistor. The semiconductor industry defines this ruggedness as the capability to withstand avalanche currents

STD15N06

Contextual Info: STD15N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS R DS on ID STD15N06 60 V < 0.1 Ω 15 A • ■ ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.075 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

STD6N10

Contextual Info: STD6N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD6N10 • ■ ■ ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 100 V < 0.45 Ω 6A TYPICAL RDS(on) = 0.35 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

STD8N10

Contextual Info: STD8N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD8N10 • ■ ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.3 Ω 8A TYPICAL RDS(on) = 0.23 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

STD5N20

Contextual Info: STD5N20 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD5N20 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 200 V < 0.7 Ω 5A TYPICAL RDS(on) = 0.55 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED

STW80N06-10

Contextual Info: STW80N06-10 N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID STW80N06-10 60 V < 0.010 Ω 80 A TYPICAL RDS(on) = 0.0085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

STD3NA50

Contextual Info: STD3NA50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS R DS on ID STD3NA50 500 V <3Ω 2.7 A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 2.4 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED