MTP6N60 Search Results

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: MTP6N60 TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTP6N60E CASE OUTLINE: TO-220AB HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:

MTP6N6

Contextual Info: MTP6N60E Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced MOSFET is

MTP6N60

Abstract: MTP6N6
Contextual Info: Æ 7 SGS-THOMSON MTP6N60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE MTP6N60 V DSS R DS on *d 600 V 1.2 a 6A • HIGH VOLTAGE - 600 V FOR OFF-LINE APPLICATIONS • ULTRA FAST SWITCHING TIMES FOR OPERATIONS AT> 100KHz • EASY DRIVE FOR REDUCED COST AND SIZE

motorola mosfet MTP6N60E

Abstract: MTP6N60E MTP6N6 AN569
Contextual Info: MOTOROLA Order this document by MTP6N60E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP6N60E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 6.0 AMPERES 600 VOLTS

MTP6N60

Contextual Info: MTP6N60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE MTP6N60 • ■ ■ ■ ■ V DSS R DS on ID 600 V < 1.2 Ω 6.8 A TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED

Contextual Info: Cx / i, LJ nc. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MTP6N60 N-Channel Mosfet Transistor FEATURES • Drain Current -ID= 6A@ TC=25°C • Drain Source Voltage1 0(2) •, ^f£\ /-s, : VDSs= 600V(Min)

GSP 405 T 125

Abstract: AN569 MTP6N60E motorola mosfet MTP6N60E
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTP6N60E TMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon G te TMOS POWER FET 6.0 AMPERES 600 VOLTS R D S o n = 1-2 OHMS This high voltage MOSFET uses an advanced termination

MTP6N6

Abstract: MTP6N60
Contextual Info: MTP6N60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE MTP6N60 • ■ ■ ■ ■ VDSS R DS on ID 600 V < 1.2 Ω 6.8 A TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED

TP6N60

Contextual Info: MOTOROLA Order this document by MTP6N60E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP6N60E TMOS E-FET ™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T his high vo lta g e M O S F E T uses an adva n ce d te rm in a tio n

MTP6N6

Abstract: MTP6N60E equivalent MTP6N60E AN569 mtp6n mosfet transistor 400 volts.100 amperes
Contextual Info: TMOS E-FET. Power Field Effect Transistor MTP6N60E ON Semiconductor Preferred Device N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading

Contextual Info: S G S - T H O M S O N ¿ 5 ¡U È T O « 7 M T P 6 N 60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V MTP6N60 • . ■ . . R DS on Id < 1 .2 a 6.8 A dss 600 V TYPICAL RDS(on) = 1 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

MTP6N60E equivalent

Abstract: MTP6N60E/D equivalent MTP6N60E motorola mosfet MTP6N60E AN569
Contextual Info: MOTOROLA Order this document by MTP6N60E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP6N60E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination

MTP6N60

Abstract: MTP6N6 12 v smps
Contextual Info: MTP6N60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE MTP6N60 • ■ ■ ■ ■ V DSS R DS on ID 600 V < 1.2 Ω 6.8 A TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

MC44603AP

Abstract: motorola mosfet MTP6N60E 1N4007 1N4148 1N4934 1N5819 MC44603A MC44603ADW MR856 TL431
Contextual Info: Order this document by MC44603A/D MC44603A Enhanced Mixed Frequency Mode GreenLine PWM Controller: Fixed Frequency, Variable Frequency, Standby Mode The MC44603A is an enhanced high performance controller that is specifically designed for off–line and dc–to–dc converter applications. This

mosfet cross reference

Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
Contextual Info: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

transistor Electronic ballast "INDUCTION LAMP"

Abstract: schematic diagram Electronic Ballast HID Motorola, AN1049 MC14046 AN1049 EB407 5000 watts PURE SINE WAVE inverter schematic diagram induction lamp electronic ballast for fluorescent lighting t8 motorola BR480/D
Contextual Info: MOTOROLA Order this document by AN1543/D SEMICONDUCTOR APPLICATION NOTE AN1543 Electronic Lamp Ballast Design Prepared by: Michaël Bairanzade Power Semiconductor Applications Engineer Motorola SPS Toulouse ABSTRACT With a continuous growth rate of 20% per year, electronic

Contextual Info: Order this document by MC44603/D MC44603 Advance Information Mixed Frequency Mode GreenLine PWM Controller: Fixed Frequency, Variable Frequency, Standby Mode The MC44603 is an enhanced high performance controller that is specifically designed for off–line and dc–to–dc converter applications. This

1N4007 diode PIV rating

Abstract: NPC1200 AND8023 NCP1200 CROSS REFERENCE NPC-1200 NPC1200 equivalent footprint for transformer in orcad trouble shorting top switch 250 smps MBRA140LT3 EGSTON C 44
Contextual Info: AND8023/D Implementing the NCP1200 in Low-Cost AC/DC Converters Prepared by: Christophe Basso ON Semiconductor Avenue Eisenhower, BP1056, 31023 TOULOUSE Cedex France 33 0 5 61 19 90 12 e–mail: christophe.basso@onsemi.com The NCP1200 implements a standard current mode

VOGT P4

Abstract: Self-Oscillating Flyback mosfet irf*6n60 orega flyback transformers resonant power supply VOGT TRANSFORMER P3 vogt b3 transformer vogt transformer VOGT P3 orega flyback transformer
Contextual Info: AND8145/D A 75 W TV Power Supply Operating in Quasi−square Wave Resonant Mode using the NCP1207 Controller http://onsemi.com Prepared by: Nicolas Cyr ON Semiconductor APPLICATION NOTE Introduction Quasi−square wave resonant converters, also known as quasi−resonant QR converters, allow designing flyback

NPC-1200

Abstract: 1N4007 diode PIV rating NPC1200 equivalent transformer egston AND8023 MBRA140LT3 npc1200 2n2222 spice model flyback transformer eldor footprint for transformer in orcad
Contextual Info: AND8023/D Implementing the NCP1200 in Low-Cost AC/DC Converters Prepared by: Christophe Basso ON Semiconductor http://onsemi.com APPLICATION NOTE S External MOSFET connection: by leaving the external MOSFET external to the IC, you can select avalanche proof devices which, in certain cases e.g. low output

MTP2P45

Abstract: MTP4N90 MTP6N6 MTP8N45 IRF840 SELECTION GUIDE MTP3N80 MTH8P20 MTP3N6 MTP1N95 MTP2N85
Contextual Info: POWER TRANSISTORS — TMOS continued V b R(DSS) (V olt*) M in (Ohms) M ax (Amp) 500 6 3 D S (o n ) @ >D Device 450 MTM2P50 >D(Contl (Amp) M ax PD @ TC = 25-C (W atts) M ax Package 2 75 204AA MTP2P50 220AB MTM2P45 204AA 220A8 MTP2P45 200 0.7 4 MTM8P20 1 2.5