STD3N25 Search Results
STD3N25 Datasheets (5)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| STD3N25 | STMicroelectronics | OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN | Original | 174.49KB | 10 | ||
| STD3N25 | STMicroelectronics | OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN | Original | 363.65KB | 10 | ||
| STD3N25-1 | STMicroelectronics | N-Channel Enhancement Mode Power MOS Transistor | Original | 363.65KB | 10 | ||
| STD3N25T4 | STMicroelectronics | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | Original | 174.48KB | 10 | ||
| STD3N25T4 | STMicroelectronics | N-Channel Enhancement Mode Power MOS Transistor | Original | 363.65KB | 10 |
STD3N25 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
3l4 diodeContextual Info: r Z ^ 7 Z S G S - T H O M S O N # M G IF ä < m [i< m @ R !]D S S T D 3 N 2 5 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V d ss R d S o ii 250 V STD3N25 Id <2 0. 3 A • . . . . TYPICAL R ds(oii) = 1 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED |
OCR Scan |
std3n25o-251o-2520068772-b+1 | |
STD3N25Contextual Info: STD3N25 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD3N25 • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 250 V <2Ω 3A TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED |
Original |
std3n25100oco-251o-252 | |
schematic diagram Electronic Ballast 236
Abstract: STD3N25
|
Original |
std3n25100oco-251o-252+1 |