ATF21186 Search Results

Contextual Info: ATF21186 Transistors N-Channel UHF/Microwave JFET V BR DSS (V) V(BR)GSS (V) I(D) Max. (A)200m P(D) Max. (W)400m Maximum Operating Temp (øC)175 I(DSS) Min. (A)80m I(DSS) Max. (A)200m @V(DS) (V) (Test Condition)3 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.70m

GHZ micro-X Package

Abstract: micro-x ATF-10136 atf 26836 ATF-25570 ATF-10236 ATF-25735 ATF-26884 ATF-13736 ATF-10100
Contextual Info: Low Noise MESFETs Typical Specifications @ 25°C Case Temperature Gate Width (mm) Optimum Frequency Range (GHz) Test Frequency (GHz) Vdd NFo Ga P1 dB [1] (V) (dB) (dB) (dBm) ATF-13100 250 2 - 18 12 2.5 1.1 9.5 ATF-13336 250 2 - 16 12 2.5 1.4 ATF-13736 250

ATF-21186

Abstract: ATF21186 at 21186
Contextual Info: What H E W L E T T mi!KM P A C K A R D 0.5 to 6 GHz G eneral P urpose G allium A rsenide FET Technical Data ATF-21186 85 m il P lastic Surface Mount Package Features • Low Noise Figure: 0.6 dB Typ. @ 2 GHz • High Output Power: 19 dBm Typ. PldB @2 GHz • High MSG:

zo 103 ma 75 607

Abstract: ZO 103 MA 75 505 ATF-21186 P 1060 atf transistor zo 607 zo 607 MA ATF-21186-STR ATF-21186-TR1 5965-8716E
Contextual Info: 0.5 – 6 GHz General Purpose Gallium Arsenide FET Technical Data ATF-21186 Description • Low Noise Figure: 0.5 dB Typ. @ 2 GHz • High Output Power: 19 dBm Typ. P1dB @ 2 GHz • High MSG: 13.5 dB Typ. @ 2 GHz • Low Cost Surface Mount Plastic Package

Toko inductor 20211

Abstract: AMP2300 Transistor S 40443 AN-G005 ATF-21186 Toko 20211 low noise design ATF 10136 INA-02184 LTC1044CS8 MSA-0686
Contextual Info: Low Noise and Moderate Power Amplifiers Using the ATF-21186 Application Note 1064 Introduction This application note describes the use of a low cost Gallium Arsenide Field Effect Transistor GaAs FET designed specifically for the VHF through 2500 MHz frequency range. The Agilent

P 1060 atf

Contextual Info: W hat H E W L E T T * mLliM P A C K A R D 0 .5 -6 GHz General Purpose Gallium Arsenide FET Technical Data ATF-21186 F e atu re s D escription • Low N oise Figure: 0.5 dBTyp. @ 2 GHz • High Output Pow er: 19 dBmTyp. PldB @ 2 GHz • High MSG: 13.5 dBTyp. @ 2 GHz

HRMA-0470B

Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
Contextual Info: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic

AN-G005

Abstract: transistor 1248 Toko inductor 20211 transistor tt 2206 transistor w1a 94 transistor rf m 9860 ST 9343 transistor bd 9262 ef Toko 20211 LT 7202
Contextual Info: r m HEW LETT mL'/LM P A C K A R D Low N oise and M oderate P ow er A m plifiers U sin g th e ATF-21186 Application Note 1064 In tro d u c tio n This application note describes the use of a low cost Gallium Arsenide Field Effect T ransistor GaAs FET designed specifically

ZO 103 MA 75 505

Abstract: ATF-21186 ATF-21186-STR ATF-21186-TR1 ATF 136
Contextual Info: 0.5 – 6 GHz General Purpose Gallium Arsenide FET Technical Data ATF-21186 Description • Low Noise Figure: 0.5 dB Typ. @ 2 GHz • High Output Power: 19 dBm Typ. P1dB @ 2 GHz • High MSG: 13.5 dB Typ. @ 2 GHz • Low Cost Surface Mount Plastic Package

IAM-81008

Abstract: 5082-2830 HSMP-3895 5082-3043 ina-02170 INA-01170 30533 5082-0012 5082-2970 HSMP 2800
Contextual Info: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101

ATF-13484

Abstract: atf 36163 Low Noise Amplifier low noise design ATF 10136 A008 amplifier TRANSISTOR amplifier TRANSISTOR 12 GHZ ATF pHEMT ATF13484 A007 transistor atf Microwave GaAs FET catalogue
Contextual Info: Application Information The following application information is either published in this catalog or available from your local Hewlett-Packard sales office, authorized distributor, or representative. Technical information is also available on the WWW at: www.hp.com/go/rf

marking IAM transistor sot-23

Abstract: ATF-13170 transistor MARKING IAM IAM-XXX08 IAM-81008 HSMP 30XX HSMP 30XX ATF HSMS-282X HSMS-820X JESD22
Contextual Info: Quality Assurance Concepts and␣ Methodology Semiconductor Devices and Hybrid␣ Assemblies Reliability/Quality Philosophy Recognizing the increasing importance of microwave component reliability for the consumer, industrial, and military markets, the Components Group

5082-2830

Abstract: IAM-81008 HSMP-3895 hsms-2850 5082-0012 8205 datasheet hsms-285b HSMS-285C HSMS-2862 MSA-0870
Contextual Info: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101

GHZ micro-X Package

Abstract: ATF-36163 Field Effect Transistors ATF-26884 atf 26836 ATF-10100 ATF-10136 ATF-13100 ATF-13336 ATF-13736
Contextual Info: Gallium Arsenide Field Effect Transistors Selection Guide NFo and Ga are specified at a low noise bias point, while P1 dB and G1 dB are specified at bias points which optimize these parameters. Low Noise PHEMTs Typical Specifications @ 25°C Case Temperature

ATF-21186

Abstract: ATF-21186-STR ATF-21186-TR1 0840 057
Contextual Info: 0.5 – 6 GHz General Purpose Gallium Arsenide FET Technical Data ATF-21186 Description • Low Noise Figure: 0.5 dB Typ. @ 2 GHz • High Output Power: 19 dBm Typ. P1dB @ 2 GHz • High MSG: 13.5 dB Typ. @ 2 GHz • Low Cost Surface Mount Plastic Package

201 429 HP

Abstract: ATF-21186 ATF-21186-STR ATF-21186-TR1 0840 057 GLDB0 ga 1112
Contextual Info: TAff% HEW LETT mLftM P A C K A R D 0 .5 - 6 GHz G eneral P urpose G allium A rsenide FET Technical Data ATF-21186 Features Description • Low N o ise Figure: 0.5 dB Typ. @ 2 GHz • H igh O utpu t Pow er: 19 dBm Typ. P ldB @ 2 GHz • H igh MSG: 13.5 dB Typ. @ 2 GHz

ATF-13484

Abstract: ATF at 2.4 Ghz bipolar transistor 2.4 ghz s-parameter ATF pHEMT ATF-36163 ATF13136 amplifier TRANSISTOR 12 GHZ low noise design ATF 10136 bipolar transistor ghz s-parameter phemt biasing ATF-36077
Contextual Info: Applications The application notes represented by these abstracts are available from your local Hewlett-Packard sales office or nearest Hewlett-Packard authorized distributor or representative. Technical information is also available on the WWW at: www.hp.com/go/rf

ATF SOT

Abstract: ATF-26884 ATF-34143 ATF-44101 ATF10236 ATF-21186 ATF-10136
Contextual Info: Gallium Arsenide Field Effect Transistors Selection Guide NFo and Ga are specified at a low noise bias point, while P1 dB and G1 dB are specified at bias points which optimize these parameters. Low Noise PHEMTs Typical Specifications @ 25°C Case Temperature

INA-02186

Abstract: MSA0485 sot363 marking code ca INA-10386 AT-41485 msa0185 msa0304 msa-1105 AT-41511 MSA-08
Contextual Info: Hewlett-Packard Company Communication Semiconductor Solutions Division 39201 Cherry Street Newark, CA 94560-4967 Customer Change Notice CCN 9808A For Hewlett-Packard Customer Notification Date: August 24, 1998 Parts Affected: All packing options of the following standard part numbers and their respective specials

HSCH-5337

Abstract: HSMS-2850 5082-3188 HSMP-3804 ifd 0512 5082-2970 5082-2800 SERIES DATASHEET 5082-2830 AT-41470 HSCH-9301
Contextual Info: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101

5965-8716E

Abstract: ATF-21186
Contextual Info: WfijM HEWLETT mLEM PACKARD 0 .5 -6 GHz General Purpose Gallium A rsenide FET Technical Data ATF-21186 F eatures D escription • Low N oise Figure: 0.5 dB Typ. @ 2 GHz • High Output Power: 19 dBm Typ. PldB @ 2 GHz • High MSG: 13.5 dB Typ. @ 2 GHz • Low C ost Surface Mount

2.4 ghz FM TRANSMITTER CIRCUIT DIAGRAM

Abstract: 8 pin IC 34063 44xx INA-10386 HP RF TRANSISTOR GUIDE ATF 26886 2.4 ghz video TRANSMITTER CIRCUIT DIAGRAM Rf detector HSMS 8202 ina series 305xx
Contextual Info: guide HP Wireless Communications Products, Markets Part-to-Market Quick Guide, Version 4.0 Table of Contents Abbreviations of Wireless Terms . i Receivers, Transmitters Receivers . 1

ATF-35176

Abstract: ATF-3507 ATF-35076 ATF-21170 ATF-44100 ATF26550 ATF-13036 ATF-10170 ATF-35576 ATF-35376
Contextual Info: Gallium Arsenide GaAs Field Effect Transistors (FETs) Low Noise GaAs FETs (Typical Specifications at +25°C Case Temperature) Part Number Gate Width Optimum Freq. Range (GHz) Test Freq. (GHz) NF. (dB) (dB) PldB (dBm) 0.5-12 2-18 0.5-6 0.5-10 4 12 4 4 0.5

AT-41486

Abstract: 8060 IAM MSA-1105 VTO-8000 HSMP-3895 HSCH-5337 ATF-46171 HSMS-2804 HSCH-5313 HSMS-2862
Contextual Info: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101