0G177 Search Results

Contextual Info: .Technical Data F ile N u m b e r CD54/74HC299 CD54/74HCT299 1485 HARRIS SEMICOND SECTOR 27E D M3G5271 0G1777G ? HAS ^ U High-Speed CMOS Logic t 20 — ô ë î— 2 19 - S 1 0Ê 2 — 3 16 - 0 S 7 i/ o 6 — 4 17 - Q 7 1/O 4 — 5 16 - I / O 7

jedec package TO-243AA

Abstract: G0177
Contextual Info: INTERNATIONAL RECTIFIER bSE ]> 4655452 OOlTb'H 122 * I N R Data Sheet No. PD-2.176 INTERNATIONAL RECTIFIER X O R 10J SERIES 1 Amp Surface Mount Silicon Rectifier Diodes Description/Features Major Ratings and Characteristics 10J 'F A V 1.0 A @ Max. T ^ 31

Contextual Info: SAMSUNG ELECTRONICS INC b?E ]> • 7 T b 4 m 2 GG177EÔ ÔÛÛ KM741006J CMOS SRAM 262,144 Words x 4-Bit Synchronous Static Random Access Memory FEATURES GENERAL DESCRIPTION • Fast Access Time: 10, 12.5, 15ns Max. • Low Power Dissipation KM741006J-10: 190mA (Max.)

3 phase ac motor speed control

Abstract: receiver 4310 fea IH08 DIODE YW 431 scr transistor marking code E3t
Contextual Info: DS83CH20 DALLAS SEMICONDUCTOR DS83CH20 Unified I/O PRODUCT SPECIFICATION Revision 1.3 Copyright 1997 by Dallas Semiconductor Corporation. All Rights Reserved. For important information regarding patents and other intellectual property rights, please refer to

Contextual Info: SONY C X P 8 1 1 P2 4 CMOS 8-bit Single Chip Microcomputer Description The CXP811P24 is a CMOS 8-bit microcomputer which consists of A/D converter, serial interface, timer/counter, time base timer, PWM output, as well as basic configurations like 8-bit CPU, PROM, RAM

pg7a

Contextual Info: CXP80P624Ä1 SONY. CMOS 8-bit Single Chip Microcomputer Description The CXP80P624A is a CMOS 8-bit microcomputer which consists of A/D converter, serial interface 2-ch independently , timer/counter, time base timer, vector interruption, high precision timing pattern generation

Contextual Info: r r u i m i TECHNOLOGY M icropower Temperature, Power Supply and Differential Voltage Monitor DCSCRIPTIOn F6RTUIKS • Complete Ambient Temperature Sensor Onboard ■ System Power Supply Monitor ■ 10-Bit Resolution Rail-to-Raii Common-Mode Differential Voltage Input

Contextual Info: FCN-674J/675*-u* FCN-675P*-LT RIGHT-ANGLE PLUG DIMENSIONS 9.64 0.380 2-63.05 (2—<f>0.120) 19.19 (0.756) a 13.29(0.523) 2nd contact 8.36(0.329) u ltT n A- 0 0 0 0 0 0 ) 0 0 0 0 0 0 (0.494) See beiow O O O O O O 'O o o o o ÉÌ Contact n 2.76(0.109)

Contextual Info: • Optical disc ICs 7 0 2 0 ^ G01777Ü 3ST Single-chip 4-bit Microcontroller for CD-DA BU34440 The BU34440 is a single-chip 4-bit microcontroller designed for CD-DA and contains parallel I/O , serial I/O , tim­ er/counter and all other functions required for CD control in a single compact package.

Contextual Info: Optical disc ICs Preservo Amplifier for CD Players BA6377K The BA6377K is a preservo amplifier that generates RF, focus error and tracking error signals from the signals out­ put by current output optical pickups. U sing this 1C in com bination with the BU 9313K can significantly reduce the

Contextual Info: •ONY I C X P811 2 0 /8 1 1 2 4 CMOS 8-bit Single Chip Microcomputer Description The C XP81120/81124 is a CMOS 8-bit micro­ computer which consists of A/D converter, serial interface, timer/counter, time base timer, PWM output, as well as basic configurations like 8-bit

Contextual Info: SAMSUNG ELECTRONICS INC b?E D • D0177B0 5T7 PRELIMINARY KM6164002 CMOS SRAM 262,144 WORD x 16 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 20, 25, 35ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CMOS) : 10mA(Max.)

bl 9 a2

Abstract: 18-PIN 20-PIN 26-PIN ZIP20-P-400
Contextual Info: O K I Sem iconductor M SM 511000B /B L _ 1,048,576-Word x 1-Bit DYNAM IC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM511000B/BL is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM511000B/BL is OKI’s CMOS silicon gate process technology.

18-PIN

Abstract: MSM51C256A 1772B
Contextual Info: O K I Semiconductor MSM5 1 C256 A 262,144-Word x 1-Bit DYNAMIC RAM DESCRIPTION The MSM51C256A is a new generation dynamic RAM organized as 262,144-word x 1-bit. The technology used to fabricate the MSM51C256A is OKI's COMS silicon gate process technology.

CXP811P24

Abstract: 3M2 64-PIN
Contextual Info: SONY C X P 8 1 1 P2 4 CMOS 8-bit Single Chip Microcomputer Description The CXP811P24 is a CMOS 8-bit microcomputer which consists of A/D converter, serial interface, timer/counter, time base timer, PWM output, as well as basic configurations like 8-bit CPU, PROM, RAM

Contextual Info: HITACHI/ LOGIC /AR RAYS/MEM SIE II MM1baG3 DD17703 HN62444 Series- TO b • H IT S T—46—13—15 4M 256K x 16-bit and (512K x 8-bit) Mask ROM ■ DESCRIPTION The Hitachi HN62444is a 4-Megabit CMOS Mask Programmable Read Only Memory organized as 262,144 x 16-bit and 524,288 x 8bit.

Contextual Info: niTsuBisHKnicnpTR/niPRC biE d • b 2 iHa 2 a 0 0 1 7 7 0 3 101 « m m M IT S U B IS H I L S I« M 5 0 5 3 2 -X X X F P D O T M A T R IX L IQ U ID C R Y S T A L D IS P L A Y C O N T R O L L E R - D R IV E R DESCRIPTION a total of 256 w ord s, with 9 bits to a word, and

Contextual Info: T h p t HEWLETT &"UM PA C K A R D 2 - 8 GHz Medium Power Gallium Arsenide FET Technical Data A TF-44101 Featu res • High Output Power: 32.0 dBm Typical Pi ^ at 4 GHz • High Gain a t 1 dB Compression: 8.5 dB Typical Gj ^ at 4 GHz • High Power Efficiency:

201 429 HP

Abstract: ATF-21186 ATF-21186-STR ATF-21186-TR1 0840 057 GLDB0 ga 1112
Contextual Info: TAff% HEW LETT mLftM P A C K A R D 0 .5 - 6 GHz G eneral P urpose G allium A rsenide FET Technical Data ATF-21186 Features Description • Low N o ise Figure: 0.5 dB Typ. @ 2 GHz • H igh O utpu t Pow er: 19 dBm Typ. P ldB @ 2 GHz • H igh MSG: 13.5 dB Typ. @ 2 GHz

Contextual Info: Optical disc ICs Voltage Controlled Oscillator BA7082F The BA7082F is an analog voltage controlled oscillator VGO developed for PLL oscillator circuits for CD-RO M drives, and for other products requiring internal reference oscillator circuits. The BA7082F contains not only a VCO,

TGS 822

Abstract: toshiba a10 motherboard 8042AH bc 107 common base h parameters Energy ICT NV IEEE 3 bus datas 5235 printer circuit diagram diode marking gp06 413D ADRV T1 transistor
Contextual Info: DS83CH20 DALLAS SEMICONDUCTOR DS83CH20 Unified I/O PRODUCT SPECIFICATION Revision 1.3 Copyright 1997 by Dallas Semiconductor Corporation. All Rights Reserved. For important information regarding patents and other intellectual property rights, please refer to

Contextual Info: 512K x 8 CMOS STATIC RAM MODULE IDT7M4048 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-density 4 m egabit C M O S Static RA M module Th e ID T 7 M 4 0 4 8 is a 4 m egabit 5 1 2K x 8 C M O S Static RAM module constructed on a co-fired ceram ic substrate

irf 9550

Abstract: "RF Mixer" 1 ghz fm demodulator active double balanced mixer RSSI mixer AGC Toko 10mm ATTW2005 digital mixer diagram and function 2.4 ghz FM RECEIVER CIRCUIT DIAGRAM if mixer
Contextual Info: Preliminary Data Sheet July 1995 = = A T & T ^ ^ » M ic ro e le c tro n ic s W2005 1 GHz to Baseband FM and DQPSK Cellular Receiver • Low supply current Features ■ Analog RSSI available ■ 800 MHz to 1 GHz RF-IF mixer ■ Analog AGC for digital-mode IF amplifiers

Contextual Info: O K I Semiconductor MSM51C464A 65,536-Word x 4-Bit D Y N A M IC R A M DESCRIPTION The MSM51C464A is a new generation dynam ic RAM organized as 65.536-word x 4-bit. The technology used to fabricate the MSM51C464A is OKI's CMOS silicon gate process technology. The