G0177 Search Results
G0177 Price and Stock
TDK Corporation B43793G0177Q011SOLDERING STAR 170UF 125V - Bulk (Alt: B43793G0177Q011) |
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B43793G0177Q011 | Bulk | 27 Weeks | 3,000 |
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B43793G0177Q011 | 300 |
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B43793G0177Q011 | Bulk | 300 | 1 |
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Bimba Manufacturing Company UG-017.75-BCYLINDER, ULTRAN RODLESS GOLD COUPLING STRENGTH; 7/16IN BORE 01; STROKE: 7.75 I |
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UG-017.75-B | Bulk | 5 Weeks | 1 |
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Qnity Laird 4569PA01G01775EMI Gaskets, Sheets, Absorbers & Shielding |
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4569PA01G01775 |
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Qnity Laird 4572AB01G01772EMI Gaskets, Sheets, Absorbers & Shielding |
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4572AB01G01772 |
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G0177 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: • Optical disc ICs 7 0 2 0 ^ G01777Ü 3ST Single-chip 4-bit Microcontroller for CD-DA BU34440 The BU34440 is a single-chip 4-bit microcontroller designed for CD-DA and contains parallel I/O , serial I/O , tim er/counter and all other functions required for CD control in a single compact package. |
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g01777bu344404096x8256x4 | |
CD74HC242
Abstract: G0177 74HC242
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cd54/74hc242cd54/74hct242cd54/74hc243cd54/74hct243+7 | |
jedec package TO-243AA
Abstract: G0177
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jedec package to-243aag0177 | |
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Contextual Info: SAMSUNG ELECTRONICS INC b?E ]> • 7 T b 4 m 2 GG177EÔ ÔÛÛ KM741006J CMOS SRAM 262,144 Words x 4-Bit Synchronous Static Random Access Memory FEATURES GENERAL DESCRIPTION • Fast Access Time: 10, 12.5, 15ns Max. • Low Power Dissipation KM741006J-10: 190mA (Max.) |
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gg177ekm741006jkm741006j-10190ma+5 | |
3 phase ac motor speed control
Abstract: receiver 4310 fea IH08 DIODE YW 431 scr transistor marking code E3t
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ds83ch202bl41300017bb36550a+7 | |
ATT2C08
Abstract: XC1700 ATT ORCA fpga "Functional replacement" ATT17128A ATT1700 ATT1700A ATT3000 ATT3020 ATT3030
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att1700aatt3000xc170020-pin+9 | |
EL50P1
Abstract: ES1000C ES300C Hall Effect Current Sensors ABB ES2000C MP25P1 VD1500-48 1SBT172000R9944 EL55P2 EL25P1
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f-69685c0202el50p1es1000c+8 | |
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Contextual Info: SONY C X P 8 1 1 P2 4 CMOS 8-bit Single Chip Microcomputer Description The CXP811P24 is a CMOS 8-bit microcomputer which consists of A/D converter, serial interface, timer/counter, time base timer, PWM output, as well as basic configurations like 8-bit CPU, PROM, RAM |
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cxp811p24cxp81120/8112423fl3dg17772+3 | |
CXP81100-U01QContextual Info: SONY CXP81100 Piggyback/ evaluator type CMOS 8-bit Single Chip Microcomputer Description The CXP81100 is a CMOS 8-bit single chip micro computer of piggyback/evaluator combined type, which Is developed for evaluating the function of the CXP81120/81124. Features |
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cxp81100cxp81120/8112416-bit333ns+6 | |
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Contextual Info: Thal PACKARD HEWLETT WLKM 0 .5 -1 0 GHz Low Noise Gallium Arsenide FET Technical Data ATF-25170 F eatures • Low N oise Figure: 0.8 dB Typical at 4 GHz • High A ssociated Gain: 14.0 dB Typical at 4 GHz • High Output Power: 21.0 dBm Typical Pi dB at 4 GHz |
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atf-2517044475a40d1770b | |
FA30PA60
Abstract: HFA30PA60C
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hfa30pa60cd-63b0fa30pa60 | |
ATT ORCA fpgaContextual Info: Preliminary Data Sheet March 1995 i t A 1 ÏX I " 181, Microelectronics ÄTT1700A Series Serial ROM Features Description • 32K, 64K, and 128K x 1 Serial ROMs for configura tion of ATT3000 and ORCA Series FPGAs The ATT1700A Series Serial ROM family provides |
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tt1700aatt3000xc170020-pin+6 | |
ATF-45171Contextual Info: That H E W L E T T 1"UM PA CKA RD 2 - 8 GHz Medium Pow er Gallium A rsenide F E T Technical Data ATF-45171 Features • High O utput P ow er: 29.0 dBm Typical P t dB at 4 GHz • High Gain a t ld B C om p ression : 10.5 dB Typical Gj dB at 4 GHz • High P ow er E fficien cy: |
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atf-45171 | |
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Contextual Info: 1 Who HEWLETT mLriM P a c k a r d 2 - 8 GHz Medium Power Gallium Arsenide FE T Technical Data A TF-45101 Features • High Output Power: 29.0 dBm Typical Pi ¿ 3 at 4 GHz • High Gain a t ldB Compression: 10.0 dB Typical Gj ¿ 3 at 4 GHz • High Power Efficiency: |
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tf-45101atf-451014447s0d17732 | |
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Contextual Info: •ONY I C X P811 2 0 /8 1 1 2 4 CMOS 8-bit Single Chip Microcomputer Description The C XP81120/81124 is a CMOS 8-bit micro computer which consists of A/D converter, serial interface, timer/counter, time base timer, PWM output, as well as basic configurations like 8-bit |
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xp81120/8112416-bit250ns16mhz+6 | |
IOR 514
Abstract: 10J2 ansk 10J1 10J4 10.6 v 3.14a diode 10J2TRRH international rectifier silicon rectifier
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ot-89o-243aasuiiel50ior 514+7 | |
CXP811P24
Abstract: 3M2 64-PIN
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cxp811p24cxp81120/81124lqfp1p2464p1n+4 | |
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Contextual Info: H I T A C H I / LOGIC/ARRAYS/nEM HN624316N Series- - Preliminary SI E D • 4 4 clb5D3 00 177 75 0T2 ■ H I T 2 16M 1M x 16-bit and (2M x 8-blt) Mask ROM ■ T -46-13-15 DESCRIPTION The Hitachi HN624316N is a 16-M egabit CMOS Mask |
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hn624316n16-bit32-bit42-pin+1 | |
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Contextual Info: Whpt H E W L E T T mirÍM P A C K A R D 0 .5 -1 0 GHz General Purpose Gallium Arsenide FET Technical Data ATF-25735 Features • High O utput Power: 19.0 Bm Typical Pj dB at 4 GHz • High Gain: 12.5 dB Typical Gj dB at 4 GHz • Low N oise Figure: 1.2 dB Typical at 4 GHz |
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atf-257355965-8710e | |
Transistor SMD a7s
Abstract: smd marking A7s smd A7s smd TRANSISTOR a7s smd transistor b35 qml-38535 A7s TRANSISTOR 4516B CDFP4-F16 4516BN
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mil-bul-103gd1771stransistor smd a7ssmd marking a7s+8 | |
TGS 822
Abstract: toshiba a10 motherboard 8042AH bc 107 common base h parameters Energy ICT NV IEEE 3 bus datas 5235 printer circuit diagram diode marking gp06 413D ADRV T1 transistor
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ds83ch20ebl41300017bb36550a+12 | |
upc 1185 h
Abstract: mobis Delay linear sweep generator using 555 timer Anritsu ML524B operation manual for vip tracking gsm and gps technology 26UA42 MU909014A1 nokia 2700 classic circuit diagram MF2400C MA8120E
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as3b119gm10mas5b125em50mas6b118gm50m1310nm+11 | |
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Contextual Info: O K I Semiconductor MSM51C464A 65,536-Word x 4-Bit D Y N A M IC R A M DESCRIPTION The MSM51C464A is a new generation dynam ic RAM organized as 65.536-word x 4-bit. The technology used to fabricate the MSM51C464A is OKI's CMOS silicon gate process technology. The |
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msm51c464a536-wordb72m24000177mb | |
M5M4V4400-7
Abstract: M5M4V4400
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0d1774q4194304-bit1048576-wordlb054-+2 | |