ATF13786 Search Results

Contextual Info: ATF13786 Transistors N-Channel UHF/Microwave MESFET V BR DSS (V) V(BR)GSS (V) I(D) Max. (A)100m P(D) Max. (W)225m Maximum Operating Temp (øC)175õ I(DSS) Min. (A)50m I(DSS) Max. (A)100m @V(DS) (V) (Test Condition)3 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.25m

GHZ micro-X Package

Abstract: micro-x ATF-10136 atf 26836 ATF-25570 ATF-10236 ATF-25735 ATF-26884 ATF-13736 ATF-10100
Contextual Info: Low Noise MESFETs Typical Specifications @ 25°C Case Temperature Gate Width (mm) Optimum Frequency Range (GHz) Test Frequency (GHz) Vdd NFo Ga P1 dB [1] (V) (dB) (dB) (dBm) ATF-13100 250 2 - 18 12 2.5 1.1 9.5 ATF-13336 250 2 - 16 12 2.5 1.4 ATF-13736 250

2SC3355 SPICE MODEL

Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Contextual Info: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness

ATF-13786

Abstract: ATF-13786-STR ATF-13786-TR1 13786
Contextual Info: Surface Mount Gallium Arsenide FET for Oscillators Technical Data ATF-13786 Description • Low Cost Surface Mount Plastic Package • High fMAX: 60 GHz Typical • Low Phase Noise at 10 GHz: -110 dBc/Hz @ 100 kHz Typical • Output Power at 10 GHz: up to 10 dBm

HRMA-0470B

Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
Contextual Info: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic

IAM-81008

Abstract: 5082-2830 HSMP-3895 5082-3043 ina-02170 INA-01170 30533 5082-0012 5082-2970 HSMP 2800
Contextual Info: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101

Contextual Info: Surface Mount Gallium Arsenide FET for Oscillators Technical Data ATF-13786 Description • Low Cost Surface Mount Plastic Package • High fMAX: 60 GHz Typical • Low Phase Noise at 10 GHz: -110 dBc/Hz @ 100 kHz Typical • Output Power at 10 GHz: up to 10 dBm

5082-2830

Abstract: IAM-81008 HSMP-3895 hsms-2850 5082-0012 8205 datasheet hsms-285b HSMS-285C HSMS-2862 MSA-0870
Contextual Info: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101

GHZ micro-X Package

Abstract: ATF-36163 Field Effect Transistors ATF-26884 atf 26836 ATF-10100 ATF-10136 ATF-13100 ATF-13336 ATF-13736
Contextual Info: Gallium Arsenide Field Effect Transistors Selection Guide NFo and Ga are specified at a low noise bias point, while P1 dB and G1 dB are specified at bias points which optimize these parameters. Low Noise PHEMTs Typical Specifications @ 25°C Case Temperature

GHZ micro-X Package

Abstract: Hewlett-Packard MICRO-X S parameters for ATF 10136 micro-x 200 mil BeO package AT-32032 ATF-13336 ATF-13786 at42010 ATF-10136
Contextual Info: Transistor Selection Guide Silicon Bipolar Transistors NFo and Ga are specified at a low noise bias point, while P 1 dB, G1 dB, and |S 21E|2 are specified at bias points which optimize these parameters. Low Noise Transistors Typical Specifications @ 25°C Case Temperature

13786

Contextual Info: What H E W L E T T * mLlíM P A C K A R D Surface Mount Gallium Arsenide FET for Oscillators Technical Data ATF-13786 Features D escription • Low Cost Surface Mount Plastic Package • High f , ^ : 60 GHz Typical • Low Phase N oise at 10 GHz: -110 dBc/Hz @ 100kHz Typical

13786

Abstract: str 50 092 ATF-13786 ATF-13786-STR ATF-13786-TR1
Contextual Info: Surface Mount Gallium Arsenide FET for Oscillators Technical Data ATF-13786 Description • Low Cost Surface Mount Plastic Package • High fMAX: 60 GHz Typical • Low Phase Noise at 10 GHz: -110 dBc/Hz @ 100 kHz Typical • Output Power at 10 GHz: up to 10 dBm

ATF SOT

Abstract: ATF-26884 ATF-34143 ATF-44101 ATF10236 ATF-21186 ATF-10136
Contextual Info: Gallium Arsenide Field Effect Transistors Selection Guide NFo and Ga are specified at a low noise bias point, while P1 dB and G1 dB are specified at bias points which optimize these parameters. Low Noise PHEMTs Typical Specifications @ 25°C Case Temperature

INA-02186

Abstract: MSA0485 sot363 marking code ca INA-10386 AT-41485 msa0185 msa0304 msa-1105 AT-41511 MSA-08
Contextual Info: Hewlett-Packard Company Communication Semiconductor Solutions Division 39201 Cherry Street Newark, CA 94560-4967 Customer Change Notice CCN 9808A For Hewlett-Packard Customer Notification Date: August 24, 1998 Parts Affected: All packing options of the following standard part numbers and their respective specials

ATF-13786

Abstract: 13786
Contextual Info: Who I HEWLETT WL'EM P A C K A R D Surface Mount Gallium A rsenide FET for O scillators Technical Data ATF-13786 Features Description • Low C ost Surface Mount Plastic Package • High f n A x * . 60 GHz Typical • Low Phase Noise at 10 GHz: -110 dBc/Hz @ 100 kHz Typical

2.4 ghz FM TRANSMITTER CIRCUIT DIAGRAM

Abstract: 8 pin IC 34063 44xx INA-10386 HP RF TRANSISTOR GUIDE ATF 26886 2.4 ghz video TRANSMITTER CIRCUIT DIAGRAM Rf detector HSMS 8202 ina series 305xx
Contextual Info: guide HP Wireless Communications Products, Markets Part-to-Market Quick Guide, Version 4.0 Table of Contents Abbreviations of Wireless Terms . i Receivers, Transmitters Receivers . 1

13786

Abstract: ATF13786
Contextual Info: Thal HEW LETT WLUM P A C K A R D Surface Mount Gallium Arsenide FET for Oscillators Technical Data ATF-13786 F eatures 85 mil Plastic Surface Mount Package • Low Cost Surface Mount Plastic Package • High fMAX: 60 GHz Typical • Low Phase Noise at 10 GHz: -110 dBc/Hz @ 100 kHz

ATF-35176

Abstract: ATF-3507 ATF-35076 ATF-21170 ATF-44100 ATF26550 ATF-13036 ATF-10170 ATF-35576 ATF-35376
Contextual Info: Gallium Arsenide GaAs Field Effect Transistors (FETs) Low Noise GaAs FETs (Typical Specifications at +25°C Case Temperature) Part Number Gate Width Optimum Freq. Range (GHz) Test Freq. (GHz) NF. (dB) (dB) PldB (dBm) 0.5-12 2-18 0.5-6 0.5-10 4 12 4 4 0.5

AT-41486

Abstract: 8060 IAM MSA-1105 VTO-8000 HSMP-3895 HSCH-5337 ATF-46171 HSMS-2804 HSCH-5313 HSMS-2862
Contextual Info: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101