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    Kyocera AVX Components 100A2R4BT150XT

    Silicon RF Capacitors / Thin Film 150volts 2.4pF
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    TTI 100A2R4BT150XT Reel 500
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    Kyocera AVX Components 100A2R4BT150XTV

    Silicon RF Capacitors / Thin Film 150V 2.4pF Tol 0.1pF Las Mkg Vertical
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    American Technical Ceramics Corp ATC100A2R4BP150X

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    Bristol Electronics ATC100A2R4BP150X 1,574
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    Quest Components () ATC100A2R4BP150X 1,259
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    ATC100A2R4BP150X 6
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    American Technical Ceramics Corp ATC100A2R4BW150XT

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    Bristol Electronics ATC100A2R4BW150XT 1,025
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    Quest Components () ATC100A2R4BW150XT 820
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    ATC100A2R4BW150XT 48
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    ATC100A2R4BW150XT 40
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    American Technical Ceramics Corp ATC100A2R4BW150X

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    Bristol Electronics ATC100A2R4BW150X 234
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    Quest Components () ATC100A2R4BW150X 3,200
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    ATC100A2R4BW150X 33
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    ATC100A2R4B Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    atc100a2r4b

    Contextual Info: Data Sheet NE5550979A R09DS0031EJ0100 Rev.1.00 Nov 25, 2011 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)


    Original     		NE5550979A R09DS0031EJ0100 IEC61000-4-2, NE5550979A NE5550979A-AZ atc100a2r4b PDF

    Contextual Info: Data Sheet NE5550979A R09DS0031EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)


    Original     		NE5550979A R09DS0031EJ0200 IEC61000-4-2, NE5550979A NE5550979A-A PDF

    TL817

    Abstract: TL934 TL804 TL802 TL902 TL941 TL928 tl945 TL84 TL805
    Contextual Info: PTFB241402F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz Description The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular amplifier applications in


    Original     		PTFB241402F PTFB241402F H-37248-4 TL817 TL934 TL804 TL802 TL902 TL941 TL928 tl945 TL84 TL805 PDF

    ATC100A101JT

    Abstract: Waka 01K0790-20 NE5550979A ATC100A3R3BW GRM1882C1H101JA01 GRM31CR72A105KA01B R-4775
    Contextual Info: A Business Partner of Renesas Electronics Corporation. NE5550979A Data Sheet R09DS0031EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm


    Original     		NE5550979A R09DS0031EJ0200 IEC61000-4-2, HS350 NE5550979A ATC100A101JT Waka 01K0790-20 ATC100A3R3BW GRM1882C1H101JA01 GRM31CR72A105KA01B R-4775 PDF

    R1766

    Contextual Info: Data Sheet NE5550979A R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)


    Original     		NE5550979A R09DS0031EJ0300 IEC61000-4-2, NE5550979A NE5550979A-A R1766 PDF

    C909

    Abstract: tL920 TL823 TL817 PTFB241402F
    Contextual Info: PTFB241402F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz Description The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular ampliier applications in


    Original     		PTFB241402F PTFB241402F H-37248-4 C909 tL920 TL823 TL817 PDF

    Panasonic R1766

    Contextual Info: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550979A R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm


    Original     		NE5550979A R09DS0031EJ0300 IEC61000-4-2, Panasonic R1766 PDF

    TL817

    Abstract: TL801 TL804 TL802 c901 transistor transistor c904 TL944 TL902 transistor c905 tl945
    Contextual Info: PTFB241402F Customer-Specific Spec — Not for General Release High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz Description The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular amplifier applications in


    Original     		PTFB241402F PTFB241402F H-37248-4 TL817 TL801 TL804 TL802 c901 transistor transistor c904 TL944 TL902 transistor c905 tl945 PDF