AS7C10 Search Results

AS7C1026C

Abstract: PCN-08
Contextual Info: Alliance Memory, Inc. 511 Taylor Way, San Carlos, CA 94070 TEL. 650 610-6800 FAX (650) 610-6800 Date: 08/08/08 PCN Tracking Number: PCN-083202 (AS7C1026C-) Product Change Notification Change Description: Describe highlights/features of product change This letter is to serve as a notification of a product change for Alliance Memory part number

Contextual Info: High Performance 128Kx8 C M O S SRAM p i AS7C1024 AS7C1024L 128Kx8 CM O S S RAM Common I/O FEATURES • Organization: 131,072 words x 8 bits • Equal access and cycle times • High speed • Easy memory expansion with CE1, CE2, OE inputs - 10/12/15/20/25/35 ns address access time

7C1025

Contextual Info: AS7C1025 AS7C31025 J l 5V/3.3V 128Kx8 CMOS SRAM Common I/O Features • O rganization: 1 3 1 ,0 7 2 w o rd s x 8 b i s • H jgh gpead - 1 0 / 1 2 / 1 5 / 2 0 nsad d ress access tin e - 3 / 3 / 4 / 5 n s o u tp u t enabie access tim. e • Low pow e rc o n s jm ption

Contextual Info: High Performance 128KX8 CMOS SRAM AS7C1024 AS7C31024 128KX8 CMOS SRAM Features • Organization: 131,072 words x 8 bits • High speed - 1 0 / 1 2 / 1 5 / 2 0 / 2 5 ns address access time - 3 / 3 / 4 / 5 / 6 ns output enable access time • Low power consumption

MA1019

Contextual Info: October 2001 Advance Information AS7C1025A AS7C31025A 5V/3.3V 128K X 8 CMOS SRAM Revolutionary pinout Features • • • • • AS7C1025A (5V version) AS7C31025A (3.3V version) Industrial and commercial temperatures Organization: 131,072 x 8 bits High speed

Contextual Info: March 2001 Advance Information AS7C1026A AS7C31026A 5V/3.3V 64K X 16 CMOS SRAM Features • Latest 6T 0.25u CMOS technology • 2.0V data retention • Easy memory expansion with CE, OE inputs • TTL-compatible, three-state I/O • JEDEC standard packaging

Contextual Info: $SULO##5333 $6:&4357 $6:&64357 8926169#45;.ð;#&026#65$0#+ YROXWLRQDU\#3LQRXW, HDWXUHV • AS7C1024 (5V version) • AS7C31024 (3.3V version) • Industrial and commercial temperatures • Organization: 131,072 words x 8 bits • High speed - 10/12/15/20 ns address access time

Contextual Info: May 2000 AS7C1025 AS7C31025 5V/3.3V 128Kx8 CMOS SRAM Revolutionary pinout Features • Low power consumption: STANDBY • AS7C1025 (5V version) • AS7C31025 (3.3V version) • Industrial and commercial temperatures • Organization: 131,072 words x 8 bits

12-BI

Contextual Info: May 2001 AS7C1026 AS7C31026 5V/3.3V 64Kx16 CMOS SRAM • Low power consumption: STANDBY - 28 mW AS7C1026 / max CMOS I/O - 18 mW (AS7C31026) / max CMOS I/O • Easy memory expansion with CE, OE inputs • TTL-compatible, three-state I/O • JEDEC standard packaging

Contextual Info: March 2001 Advance Information AS7C1025A AS7C31025A 5V/3.3V 128K X 8 CMOS SRAM Revolutionary pinout • • • • • • Latest 6T 0.25u CMOS technology 2.0V data retention Easy memory expansion with CE, OE inputs Center power and ground TTL/LVTTL-compatible, three-state I/O

AS7C31026

Contextual Info: 2&72% 5#4<<<# $6:&4359 $6:&64359 8926169#97.ð49#&026#65$0 HDWXUHV • AS7C1026 (5V version) • AS7C31026 (3.3V version) • Industrial and commercial versions • Organization: 65,536 words x 16 bits • Center power and ground pins for low noise • High speed

Collins Electronics

Abstract: lm 3751 AS7010 NT 407 F 0637 Z05 AS7C1024-20PC LR 3441 AS7C1024 AS7C31024 AS701024-12TJC
Contextual Info: H ig h P e r f o r m a n c e 128KX8 C M O S SR A M A AS7C1024 AS7C31024 128KX8 CMOS SRAM Features • Organization: 131,072 words x 8 bits • High speed - 1 0 / 1 2 / 1 5 / 2 0 / 2 5 ns address access time - 3 / 3 / 4 / 5 / 6 n s output enable access time

km681001j-20

Abstract: TC55B328J-12 256Kx4 TC55B465J10 TC55B8128J20 PDM41028SA-15SO TC55B8128J-12 TC55328J-20 KM681001J-25 PDM41024S20
Contextual Info: Cross Reference Guide Cross Reference Guide ALLIANCE VS PARADIGM AS7C1024-10TJ AS7C1024-12TJ AS7C1024-15TJ AS7C1024-20TJ AS7C1024L-10TJ AS7C1024L-12TJ AS7C1024L-15TJ AS7C1024L-20TJ AS7C1028-10TJ AS7C1028-12TJ AS7C1028-15TJ AS7C1028-20TJ AS7C1028L-10TJ AS7C1028L-12TJ

AS7C1026A

Abstract: AS7C1026A-10 AS7C31026A AS7C31026A-10
Contextual Info: May 2001 Advance Information AS7C1026A AS7C31026A 5V/3.3V 64K X 16 CMOS SRAM Features • Latest 6T 0.25u CMOS technology • Easy memory expansion with CE, OE inputs • TTL-compatible, three-state I/O • JEDEC standard packaging • AS7C1026A 5V version

TAA 621

Abstract: MD 202 TAA 621 applications AS7C1026-15JC AS7C1026 AS7C31026 7C1026 AS7C31026-25JC AS7C1026-25JC J-Squared Technologies
Contextual Info: High Performance 64Kx16 CMOS SRAM AS7C1026 AS7C31026 64K×16 CMOS SRAM Preliminary information Features • Organization: 65,536 words × 16 bits • High speed - 12/15/20/25 ns address access time - 6/8/10/12 ns output enable access time • Low power consumption

MD 202

Abstract: MW SW front END SW 3395 6V TAA 621 applications 13831 epos Electronics TAA 521 A TEXAS CT 306 AS7C1025 AS7C31025
Contextual Info: High Performance 128Kx8 CMOS SRAM AS7C1025 AS7C31025 128K×8 CMOS SRAM Common I/O Preliminary information Features • Organization: 131,072 words × 8 bits • High speed - 10/12/15/20 ns address access time - 3/3/4/5 ns output enable access time • Low power consumption

Contextual Info: March 2004 AS7C1025B 5V 128K X 8 CMOS SRAM Center power and ground Features • JEDEC-standard packages - 32-pin, 300 mil SOJ - 32-pin, 400 mil SOJ • ESD protection ≥ 2000 volts • Latch-up current ≥ 200 mA • Industrial and commercial temperatures

Contextual Info: September 2006 Advance Information AS7C1025C 5V 128K X 8 CMOS SRAM Center power and ground Features • Industrial (-40o to 85oC) temperature. • Organization: 131,072 x 8 bits • High speed - 15 ns address access time - 6 ns output enable access time

AS7C1024B

Abstract: AS7C1024B-10JC AS7C1024B-10STC AS7C1024B-10TC AS7C1024B-10TJC AS7C1024B-12JC AS7C1024B-12JI AS7C1024B-12TJC AS7C1024B-12TJI
Contextual Info: March 2004 AS7C1024B 5V 128K X 8 CMOS SRAM Features • Industrial and commercial temperatures • Organization: 131,072 words x 8 bits • High speed - 10/12/15/20 ns address access time - 5/6/7/8 ns output enable access time • Low power consumption: ACTIVE

1025B

Abstract: FXA2G392nd130 AS7C1025B AS7C1025B-10JC AS7C1025B-10JI AS7C1025B-10TJC AS7C1025B-10TJI AS7C1025B-12JC AS7C1025B-12TJC AS7C1025B-12TJI
Contextual Info: March 2004 AS7C1025B 5V 128K X 8 CMOS SRAM Center power and ground Features • JEDEC-standard packages - 32-pin, 300 mil SOJ - 32-pin, 400 mil SOJ • ESD protection ≥ 2000 volts • Latch-up current ≥ 200 mA • Industrial and commercial temperatures

Contextual Info: H igh P erform ance AS7C10 2 4 AS7C1024L 128KX8 CMOS SRAM A 128KX8 CMOS SRAM Features • O r g a n iz a tio n : 1 3 1 ,0 7 2 w o r d s x 8 b its • E asy m e m o r y e x p a n s i o n w i t h C E 1 , C E 2, O E in p u t s • H ig h s p e e d • T T L -c o m p a tib le , th r e e - s t a te I / O

Contextual Info: AS7C1026 AS7C31026 X 5V/3.3V 64Kx 16 CMOS SRAM Features • Organization: 65,536 words x 16 bits • High speed - 1 0 / 1 2 /1 5 / 2 0 ns address access time - 5 / 5 / 8 / 1 0 ns output enable access time • Low power consumption - Active: 770 mW max 20 ns cycle, 5V

Contextual Info: H ig li P e rfo rm a n ce AS7C1028 A S7C1028L 256KX4 CMOS SRAM A 2 5 6 K X 4 CMOS SRAM Features • O rg a n iz a tio n : 2 6 2 ,1 4 4 w o rd s x 4 b its • Easy m e m o r y e x p a n sio n w ith CE a n d OE in p u ts • H ig h sp e e d • T T L -c o m p atib le, th re e -s ta te I / O

Contextual Info: H ig h P e r fo r m a n c e 128K x8 CMOS SRAM « f l A S7C 1024L AS7C1024LL Low power 1 28K X 8 CMOS SRAM C om m on I / O Advance information • Organization: 131,072 words x 8 bits • Single SV pow er supply • High speed - 5 5 /7 0 ns address access time