AS7C Search Results

AS7C331MNTD32A

Abstract: AS7C331MPFD32A AS7C332MPFD18A AS7C332MPFS18A
Contextual Info: November 2004 AS7C331MNTD32A AS7C331MNTD36A 3.3V 1M x 32/36 Pipelined SRAM with NTDTM Features • Organization: 1,048,576 words × 32 or 36 bits • NTD architecture for efficient bus operation • Fast clock speeds to 200 MHz • Fast clock to data access: 3.2/3.5/3.8 ns

AS7C34098

Abstract: AS7C34098A AS7C34098A-10JC
Contextual Info: AS7C34098A August 2004 3.3 V 256 K x 16 CMOS SRAM Features • Pin compatible with AS7C34098 • Industrial and commercial temperature • Organization: 262,144 words × 16 bits • Center power and ground pins • High speed • Easy memory expansion with CE, OE inputs

AS7C1026C

Abstract: PCN-08
Contextual Info: Alliance Memory, Inc. 511 Taylor Way, San Carlos, CA 94070 TEL. 650 610-6800 FAX (650) 610-6800 Date: 08/08/08 PCN Tracking Number: PCN-083202 (AS7C1026C-) Product Change Notification Change Description: Describe highlights/features of product change This letter is to serve as a notification of a product change for Alliance Memory part number

AS7C32096A

Abstract: AS7C32096A-10TC AS7C32096A-10TI AS7C32096A-12TC AS7C32096A-12TI AS7C32096A-15TC AS7C32096A-15TI AS7C32096A-20TC AS7C32096A-20TI
Contextual Info: February 2006 AS7C32096A 3.3V 256K x 8 CMOS SRAM Features • Equal access and cycle times • Easy memory expansion with CE, OE inputs • TTL-compatible, three-state I/O • JEDEC standard packages • Industrial and commercial temperature • Organization: 262,144 words × 8 bits

Contextual Info: 32Kx8 3.3V SRAM AS7C3256 Logic Block Diagram Features ♦ High Performance CMOS: tAA=10-25 ns ♦ Fast OE access: t0 E=3-6 ns ♦ Very low power - 216 m W @ 100 M H z - 3.6 m W @ 10 M H z standby - 1.1 mW @ • I/07 10 M H z standby: L version ♦ Automatic CE power down

intel 29F

Abstract: T7164 28F Intel LV6416 4c4007 5B810 32kxS 62832 dram cross reference T5C2568
Contextual Info: A Fast SRAM cross reference Vendor Cypress Hitachi Code ASCCode Description Code ASC Code CY 7C 185 A S7C 164 81x8 M C M 6264C AS7C164 8Kx8 CY 7C 199 A 57C 256 32K x8 M C M 6206D A S7C2S6 32K x8 C Y 7 C J3 9 9 A S7C 32S6 3 2 K * 8 3V M CM 62V06D A S7C 3256

Contextual Info: Hij>h P e r f o r m, u h r AS7CI026 A » 64Kxl ' H C M O S SR AM AS7CÎI026 6 I k x If, CMOS NK'UI Preliminary information • O rg a n iz a tio n : 6 5 ,5 3 6 w o rd s x 16 bits • T T L - c o m p a tib le , three-state I / O • H ig h speed • 4 4 - p in JE D E C standard p ackage

Contextual Info: High Performance 128Kx8 C M O S SRAM p i AS7C1024 AS7C1024L 128Kx8 CM O S S RAM Common I/O FEATURES • Organization: 131,072 words x 8 bits • Equal access and cycle times • High speed • Easy memory expansion with CE1, CE2, OE inputs - 10/12/15/20/25/35 ns address access time

AS7C33512NTD36A

Contextual Info: Advance information June 2001 AS7C33512NTD32A AS7C33512NTD36A 3.3V 512Kx32/36 SRAM with NTDTM Features • Organization: 524,288 words × 32 or 36 bits • NTD architecture for efficient bus operation • Fast clock speeds to 200 MHz in LVTTL/LVCMOS

dsp processor Architecture of TMS320C6X

Abstract: AS7C33256PFD16A AS7C33256PFD18A AS7C33256PFS16A AS7C33256PFS18A TMS320C6X
Contextual Info: March 2001 AS7C33256PFD16A AS7C33256PFD18A 3.3V 256K x 16/18 pipeline burst synchronous SRAM Features • Organization: 262,144 words × 16 or 18 bits • Fast clock speeds to 166 MHz in LVTTL/LVCMOS • Fast clock to data access: 3.5/3.8/4.0/5.0 ns • Fast OE access time: 3.5/3.8/4.0/5.0 ns

Contextual Info: High Performance 32KX83.3Y CMOS SRAM •■ II AS7C3256 AS7G3256L L ow v o ltage 3 2 K x 8 C M O S SR A M Features • • • • O rganization: 32,7 6 8 w o rd s x 8 bits Single 3.3 ± 0.3V p o w e r supply 5V tolerant I /O specification H igh speed - 1 0 / 1 2 / 1 5 / 2 0 ns address access tim e

Contextual Info: II High-Performance SKxS CMOS SRAM AS7CJ64 AS7CÎ64L 8Kx8 CMOS SRAM Common I/O FEATURES • Organization: 8,192 words x 8 bits Equal access and cycle times • High speed Very fast 3 ns output enable access time - 10/12/15/20/25 ns address access time Easy memory expansion with CE1, CE2, OE inputs

Contextual Info: Preliminary information •■ AS7C251024LL A 2.5V 128K X 8 lntelliwatt,v low power CM O S SRAM Features • • • • Intelliwatt active power reduction circuitry 2.3V to 3.0V operating range Organization: 131,072 words x 8 bits High speed - 5 5 * /7 0 /1 0 0 ns address access time

Contextual Info: High Performance 32Kx8 CMOS SRAM p i AS7C256 AS7C256L 32Kx8 CMOS SRAM Common I/O FEATURES • Organization: 32,768 words x 8 bits Equal access and cycle times • High speed Easy memory expansion with CE and OE inputs - 10/12/15/20/25/35 ns address access time

AS7C38096A

Abstract: AS7C38096A-10TIN AS7C38096A-10BIN
Contextual Info: FEBRUARY 2012 AS7C38096A 1M X 8 BIT HIGH SPEED CMOS SRAM FEATURES GENERAL DESCRIPTION  Fast access time : 10ns  Very low power consumption: Operating current: 80mA TYP. 10ns Standby current (Normal version): 3mA(TYP.)  Single 3.3V power supply  All inputs and outputs TTL compatible

7C1024

Abstract: AS7C256
Contextual Info: AS7C256 5V 32K •8 CMOS SRAAA /Common I OV Features • O rganization: 3 2 ,7 6 8 w ords X 8 bits • H igh speed - 1 0 /1 2 /1 5 / 2 0 ns address access tim e - 3 / 3 / 4 / 5 ns o utput enable access tim e • Low pow er consum ption - Active: 660 m W m ax 10 ns cycle

7C1025

Contextual Info: AS7C1025 AS7C31025 J l 5V/3.3V 128Kx8 CMOS SRAM Common I/O Features • O rganization: 1 3 1 ,0 7 2 w o rd s x 8 b i s • H jgh gpead - 1 0 / 1 2 / 1 5 / 2 0 nsad d ress access tin e - 3 / 3 / 4 / 5 n s o u tp u t enabie access tim. e • Low pow e rc o n s jm ption

as7c164-25pc

Abstract: 7C164-10
Contextual Info: AS7CNS4 AS7C164L Hitih-Perfornìanitì 8K xS CMOS SRAM & sV^'C KKx8 CMOS SRAM Common I/O IFEATURES Organization: 8,192 words x 8 bits Equal access and cycle times High speed - 10/12/15/20/25 ns address access time - 3/3/4/5/6 ns output enable access time

Contextual Info: H ig h P erfo rm a n ce 32K X8 CMOS SRAM AS7C.256 AS7C 256L A 32KX8 CMOS SRAM Common I/O • Organization: 32,768 words x 8 bits •H ig h sp eed - 1 0 /1 2 /1 5 /2 0 /2 5 /3 5 ns address access time - 3 / 3 / 4 / 5 / 6 /8 ns output enable access time • Low power consumption

Contextual Info: Advance information •■ AS7C31026LL II 3.3V 6 4K x 16 Intelliwatt'1' low power CM O S SRAM Features • Optimized design for battery operated portable systems • Intelliwatt active power reduction circuitry • Organization: 65,536 words X 16 bits • 2.7 V to 3.6V operating range

Contextual Info: Advance information •■ AS7C3512K16P AS7C3512K18P Il II 3.3V 512K- 16 ‘18 pipeline burst synchronous SRAM Features • • • • • • • • • Organization: 5 2 4 ,2 8 8 w ord s x 16 or 18 bits Fast clock speeds to 166 MHz in LVTTL/LVCMOS Fast clock to data access: 3 . 5 / 3 . 8 / 4 / 5 ns

Contextual Info: High Performance 128KX8 CMOS SRAM AS7C1024 AS7C31024 128KX8 CMOS SRAM Features • Organization: 131,072 words x 8 bits • High speed - 1 0 / 1 2 / 1 5 / 2 0 / 2 5 ns address access time - 3 / 3 / 4 / 5 / 6 ns output enable access time • Low power consumption

Contextual Info: Âdvônœ inforrriöHon AS7C 2 5 4 Ö9 BLL 2 ,5 V 2 5 óK xlé Inteiiiwof low power CM OS SRAM Features • • • • • • • • • • Smallest footprint packages - 48 ball FBGA - 400 mil TSOPII • Cfenter power and ground pins for low noise • ESD protection > 2000 volts

Contextual Info: AS 7CÌÓ4 OCTOBER 1999 SV 8K*8 C M O S SRAM Features Low power consumption: STANDBY - 11 mW AS7C164 / max CMOS I/O 2.0Ydata retention Easy memory expansion with CE1, CE2, OE inputs TTL-compatible, three-state 1/ O 28-pin JEDBC standard package - 300 mil PDIP and SOJ