AO88 Search Results
AO88 Datasheets (42)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| AO8800 | Alpha Semiconductor | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor | Original | 227.48KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO8801 | Alpha & Omega Semiconductor | Dual P-Channel Enhancement Mode Field Effect Transistor | Original | 106.32KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO8801A | Alpha & Omega Semiconductor | Load Switch - 20V P-Channel MOSFET | Original | 354.65KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO8801A_001 | Alpha & Omega Semiconductor | MOSFET 2P-CH 8TSSOP | Original | 784.21KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO8801AL | Alpha & Omega Semiconductor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2P-CH 20V 4.5A 8TSSOP | Original | 353.34KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO8801L | Alpha & Omega Semiconductor | Dual P-Channel Enhancement Mode Field Effect Transistor | Original | 106.32KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO8802 | Unknown | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor | Original | 280.36KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO8803 | Alpha & Omega Semiconductor | Dual P-Channel Enhancement Mode Field Effect Transistor | Original | 115.01KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO8803L | Alpha & Omega Semiconductor | Dual P-Channel Enhancement Mode Field Effect Transistor | Original | 115.01KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO8804 | Alpha & Omega Semiconductor | Battery Protection - Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor | Original | 139.27KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO8804 | Unknown | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor | Original | 228.96KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO8804_100 | Alpha & Omega Semiconductor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2N-CH 20V | Original | 141.72KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO8804L | Alpha & Omega Semiconductor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2N-CH 20V | Original | 141.72KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO8806 | Unknown | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor | Original | 191.79KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| AO8807 | Alpha & Omega Semiconductor | Load Switch - Dual P-Channel Enhancement Mode Field Effect Transistor | Original | 152.61KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO8807L | Alpha & Omega Semiconductor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 8TSSOP | Original | 196.22KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO8808 | Alpha & Omega Semiconductor | Dual N-Channel Enhancement Mode Field Effect Transistor | Original | 108.98KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO8808A | Alpha & Omega Semiconductor | Dual N-Channel Enhancement Mode Field Effect Transistor | Original | 109.38KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO8808AL | Alpha & Omega Semiconductor | Dual N-Channel Enhancement Mode Field Effect Transistor | Original | 109.38KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO8808L | Alpha & Omega Semiconductor | Dual N-Channel Enhancement Mode Field Effect Transistor | Original | 108.98KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AO88 Price and Stock
Alpha & Omega Semiconductor AO8814MOSFET 2N-CH 20V 8TSSOP |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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AO8814 | Reel | 3,000 | 3,000 |
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Buy Now | |||||
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AO8814 | 68 |
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AO8814 | 3,000 |
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SRA Soldering Products AO888A888A 2 IN 1 DIGITAL HOT AIR REWO |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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AO888A | Box | 85 | 1 |
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SRA Soldering Products AO888A220V888A 2 IN 1 DIGITAL HOT AIR REWO |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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AO888A220V | Box | 59 | 1 |
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SRA Soldering Products AO883883 LARGE IR PREHEATING STATION |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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AO883 | Box | 16 | 1 |
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SRA Soldering Products AO88008800 SELF CONTAINED DESOLDERING |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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AO8800 | Box | 7 | 1 |
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Buy Now | |||||
AO88 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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AO8820
Abstract: ao88
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AO8820 AO8820 ao88 | |
7A TSSOP8
Abstract: AO8824 AO88
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AO8824 AO8824 othe00 7A TSSOP8 AO88 | |
AO8801Contextual Info: AO8801 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8801 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. |
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AO8801 AO8801 | |
AO8822Contextual Info: AO8822 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8822 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable |
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AO8822 AO8822L | |
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Contextual Info: AO8820 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8820/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This |
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AO8820 AO8820/L AO8820L -AO8820L | |
AO8814Contextual Info: AO8814 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8814 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. |
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AO8814 AO8814is AO8814L | |
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Contextual Info: Rev 1: Nov 2004 AO8808A, AO8808AL Green Product Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8808A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while |
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AO8808A, AO8808AL AO8808A | |
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Contextual Info: AO8820 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8820 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This |
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AO8820 AO8820 AO8820L | |
AO8832Contextual Info: AO8832 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8832 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This |
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AO8832 AO8832 | |
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Contextual Info: AO8822 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8822 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable |
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AO8822 AO8822 | |
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Contextual Info: AO8803 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8803 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM |
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AO8803 AO8803 | |
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Contextual Info: Rev 1: Nov 2004 AO8801, AO8801L Green Product Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This |
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AO8801, AO8801L AO8801 | |
AO8816Contextual Info: AO8816 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8816 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM |
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AO8816 AO8816 | |
AO8807LContextual Info: AO8807L Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8807L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch. |
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AO8807L AO8807L | |
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Contextual Info: AO8818 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8818 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This |
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AO8818 AO8818 | |
AO8814
Abstract: AO8814L
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AO8814 AO8814 AO8814is AO8814L | |
AO8830Contextual Info: AO8830 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8830/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable |
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AO8830 AO8830/L AO8830 AO8830L -AO8830L | |
AO8820Contextual Info: AO8820 20V N-Channel MOSFET General Description Product Summary The AO8820 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional |
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AO8820 AO8820 othe00 | |
AO8806Contextual Info: AO8806 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8806 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM |
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AO8806 AO8806 | |
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Contextual Info: AO8822 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8822 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable |
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AO8822 AO8822 | |
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Contextual Info: Rev 2: Nov 2004 AO8803, AO8803L Green Product Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8803 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This |
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AO8803, AO8803L( AO8803 AO8803L AO8803L | |
AO8801AContextual Info: AO8801A 20V P-Channel MOSFET General Description Product Summary The AO8801A uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. |
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AO8801A AO8801A | |
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Contextual Info: Rev 1: August 2004 AO8814, AO8814L Green Product Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8814 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while |
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AO8814, AO8814L AO8814 | |
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Contextual Info: AO8810 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8810 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM |
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AO8810 AO8810 AO8810L | |