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    AO88 Datasheets (42)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    AO8800
    		Alpha Semiconductor Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF 227.48KB 6
    AO8801
    		Alpha & Omega Semiconductor Dual P-Channel Enhancement Mode Field Effect Transistor Original PDF 106.32KB 4
    AO8801A
    		Alpha & Omega Semiconductor Load Switch - 20V P-Channel MOSFET Original PDF 354.65KB 5
    AO8801A_001
    		Alpha & Omega Semiconductor MOSFET 2P-CH 8TSSOP Original PDF 784.21KB
    AO8801AL
    		Alpha & Omega Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2P-CH 20V 4.5A 8TSSOP Original PDF 353.34KB
    AO8801L
    		Alpha & Omega Semiconductor Dual P-Channel Enhancement Mode Field Effect Transistor Original PDF 106.32KB 4
    AO8802
    		Unknown Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF 280.36KB 6
    AO8803
    		Alpha & Omega Semiconductor Dual P-Channel Enhancement Mode Field Effect Transistor Original PDF 115.01KB 4
    AO8803L
    		Alpha & Omega Semiconductor Dual P-Channel Enhancement Mode Field Effect Transistor Original PDF 115.01KB 4
    AO8804
    		Alpha & Omega Semiconductor Battery Protection - Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF 139.27KB 4
    AO8804
    		Unknown Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF 228.96KB 6
    AO8804L
    		Alpha & Omega Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2N-CH 20V Original PDF 141.72KB
    AO8804_100
    		Alpha & Omega Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2N-CH 20V Original PDF 141.72KB
    AO8806
    		Unknown Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF 191.79KB 4
    AO8807
    		Alpha & Omega Semiconductor Load Switch - Dual P-Channel Enhancement Mode Field Effect Transistor Original PDF 152.61KB 5
    AO8807L
    		Alpha & Omega Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 8TSSOP Original PDF 196.22KB
    AO8808
    		Alpha & Omega Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF 108.98KB 4
    AO8808A
    		Alpha & Omega Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF 109.38KB 4
    AO8808AL
    		Alpha & Omega Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF 109.38KB 4
    AO8808L
    		Alpha & Omega Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF 108.98KB 4
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    AO88 Price and Stock

    Alpha & Omega Semiconductor

    Alpha & Omega Semiconductor AO8814

    Transistor: N-MOSFET x2; unipolar; 20V; 6A; 960mW; TSSOP8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME AO8814 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.31
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    Quest Components AO8814 68
    • 1 $0.88
    • 10 $0.70
    • 100 $0.53
    • 1000 $0.53
    • 10000 $0.53
    		Buy Now

    Alpha & Omega Semiconductor AO8808A

    Transistor: N-MOSFET x2; unipolar; 20V; 6.3A; Idm: 30A; 1.08W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME AO8808A 1
    • 1 $0.97
    • 10 $0.48
    • 100 $0.39
    • 1000 $0.36
    • 10000 $0.36
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    ComSIT USA AO8808A 2,500
    • 1 -
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    Alpha & Omega Semiconductor AO8810

    Transistor: N-MOSFET x2; unipolar; 20V; 5.7A; 1W; TSSOP8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME AO8810 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.39
    		Get Quote
    Quest Components AO8810 160
    • 1 $4.39
    • 10 $4.39
    • 100 $2.71
    • 1000 $2.71
    • 10000 $2.71
    		Buy Now
    NexGen Digital AO8810 574
    • 1 -
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    Win Source Electronics AO8810 51,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.15
    • 10000 $0.13
    		Buy Now

    Alpha & Omega Semiconductor AO8801A

    Transistor: P-MOSFET x2; unipolar; -20V; -3.6A; 960mW; TSSOP8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME AO8801A 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.26
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    Alpha & Omega Semiconductor AO8822

    Transistor: N-MOSFET x2; unipolar; 20V; 5.5A; 960mW; TSSOP8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME AO8822 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.28
    		Get Quote
    Find more AO88 price and stock on Findchips.com

    AO88 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    AO8820

    Abstract: ao88
    Contextual Info: AO8820 20V Common-Drain Dual N-Channel MOSFET General Description Product Summary The AO8820 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use


    Original     		ao8820ao88 PDF

    7A TSSOP8

    Abstract: AO8824 AO88
    Contextual Info: AO8824 20V N-Channel MOSFET General Description Product Summary The AO8824 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional


    Original     		ao8824othe007a tssop8ao88 PDF

    AO8801

    Contextual Info: AO8801 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8801 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.


    Original     		ao8801 PDF

    AO8822

    Contextual Info: AO8822 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8822 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable


    Original     		ao8822ao8822l PDF

    Contextual Info: AO8820 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8820/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This


    Original     		ao8820ao8820/lao8820l-ao8820l PDF

    AO8814

    Contextual Info: AO8814 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8814 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected.


    Original     		ao8814ao8814isao8814l PDF

    Contextual Info: Rev 1: Nov 2004 AO8808A, AO8808AL Green Product Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8808A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while


    Original     		ao8808aao8808al PDF

    Contextual Info: AO8820 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8820 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This


    Original     		ao8820ao8820l PDF

    AO8832

    Contextual Info: AO8832 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8832 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This


    Original     		ao8832 PDF

    Contextual Info: AO8822 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8822 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable


    Original     		ao8822 PDF

    Contextual Info: AO8803 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8803 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM


    Original     		ao8803 PDF

    Contextual Info: Rev 1: Nov 2004 AO8801, AO8801L Green Product Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This


    Original     		ao8801ao8801l PDF

    AO8816

    Contextual Info: AO8816 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8816 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM


    Original     		ao8816 PDF

    AO8807L

    Contextual Info: AO8807L Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8807L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch.


    Original     		ao8807l PDF

    Contextual Info: AO8818 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8818 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This


    Original     		ao8818 PDF

    AO8814

    Abstract: AO8814L
    Contextual Info: AO8814 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8814 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected.


    Original     		ao8814ao8814isao8814l PDF

    AO8830

    Contextual Info: AO8830 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8830/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable


    Original     		ao8830ao8830/lao8830l-ao8830l PDF

    AO8820

    Contextual Info: AO8820 20V N-Channel MOSFET General Description Product Summary The AO8820 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional


    Original     		ao8820othe00 PDF

    AO8806

    Contextual Info: AO8806 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8806 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM


    Original     		ao8806 PDF

    Contextual Info: AO8822 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8822 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable


    Original     		ao8822 PDF

    Contextual Info: Rev 2: Nov 2004 AO8803, AO8803L Green Product Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8803 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This


    Original     		ao8803ao8803l PDF

    AO8801A

    Contextual Info: AO8801A 20V P-Channel MOSFET General Description Product Summary The AO8801A uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.


    Original     		ao8801a PDF

    Contextual Info: Rev 1: August 2004 AO8814, AO8814L Green Product Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8814 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while


    Original     		ao8814ao8814l PDF

    Contextual Info: AO8810 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8810 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM


    Original     		ao8810ao8810l PDF