AO8814L Search Results

AO8814L Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
AO8814L		Alpha & Omega Semiconductor	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor	Original	PDF	116.15KB	4

AO8814L Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Rev 1: August 2004 AO8814, AO8814L Green Product Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8814 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while	Original	AO8814, AO8814L AO8814	PDF
AO8814 Contextual Info: AO8814 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8814 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected.	Original	AO8814 AO8814is AO8814L	PDF
AO8814 Abstract: AO8814L Contextual Info: AO8814 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8814 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected.	Original	AO8814 AO8814 AO8814is AO8814L	PDF

Catalog Datasheet

Type

Document Tags

PDF

Contextual Info: Rev 1: August 2004 AO8814, AO8814L Green Product Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8814 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while

Original

AO8814, AO8814L AO8814

PDF

AO8814

Contextual Info: AO8814 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8814 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected.

Original

AO8814 AO8814is AO8814L

PDF

AO8814

Abstract: AO8814L
Contextual Info: AO8814 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8814 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected.

Original

AO8814 AO8814 AO8814is AO8814L

PDF