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    AO8814

    Contextual Info: AO8814 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8814 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected.


    Original     		AO8814 AO8814is AO8814L PDF

    AO8814

    Abstract: AO8814L
    Contextual Info: AO8814 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8814 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected.


    Original     		AO8814 AO8814 AO8814is AO8814L PDF

    AO8814

    Contextual Info: AO8814 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8814 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected.


    Original     		AO8814 AO8814 AO8814is PDF