AO8814 Search Results
AO8814 Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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AO8814 | Alpha & Omega Semiconductor | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor | Original | 116.15KB | 4 | ||
AO8814L | Alpha & Omega Semiconductor | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor | Original | 116.15KB | 4 |
AO8814 Price and Stock
Alpha & Omega Semiconductor AO8814MOSFET 2N-CH 20V 8TSSOP |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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AO8814 | Reel | 3,000 | 3,000 |
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AO8814 | 68 |
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AO8814 | 3,000 |
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Alpha & Omega Semiconductor AO8814-AMOSFET 2N-CH 20V 8TSSOP |
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AO8814-A | Bulk |
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Alpha & Omega Semiconductor AO8814B |
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AO8814B | 185 |
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AO8814 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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AO8814Contextual Info: AO8814 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8814 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. |
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AO8814 AO8814is AO8814L | |
AO8814
Abstract: AO8814L
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AO8814 AO8814 AO8814is AO8814L | |
Contextual Info: Rev 1: August 2004 AO8814, AO8814L Green Product Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8814 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while |
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AO8814, AO8814L AO8814 | |
Contextual Info: AO8814 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8814 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. |
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AO8814 AO8814 425nC) | |
AO8814Contextual Info: AO8814 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8814 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. |
Original |
AO8814 AO8814 | |
AO8814Contextual Info: AO8814 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8814 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. |
Original |
AO8814 AO8814 AO8814is | |
AON6704L
Abstract: AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025
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O-252) O-263) MSOP-10 SC70-3 SC70-6 SC-89-3 SC-89-6 OD523 OD923 OT23-3 AON6704L AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025 | |
STM9435
Abstract: AP4411 ao3411 EQUIVALENT STM8405 AP40N03H AP4936M stm4532 FDD6685 AP9960M APEC
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STU3055L2 APM2034NU STU4030NL APM2512NU APM3011NU STU3030PL APM3020PU APM3023N STU3030NL STM9435 AP4411 ao3411 EQUIVALENT STM8405 AP40N03H AP4936M stm4532 FDD6685 AP9960M APEC | |
semiconductor cross reference
Abstract: AP40N03H STM8405 AP4411 AP60N03H ap4503M Fairchild Cross Reference ao3411 AO3401 cross reference anpec Cross Reference
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STU3055L2 APM2034NU STU4030NL APM2512NU APM3011NU STU3030PL APM3020PU APM3023N STU3030NL semiconductor cross reference AP40N03H STM8405 AP4411 AP60N03H ap4503M Fairchild Cross Reference ao3411 AO3401 cross reference anpec Cross Reference |