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    AO8830L Search Results

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    AO8830

    Contextual Info: AO8830 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8830/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable


    Original     		AO8830 AO8830/L AO8830 AO8830L -AO8830L PDF

    AO8830

    Abstract: 5a diode
    Contextual Info: AO8830 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8830 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected.


    Original     		AO8830 AO8830 AO8830L 5a diode PDF

    AO8830

    Contextual Info: AO8830 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8830/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable


    Original     		AO8830 AO8830/L AO8830 AO8830L -AO8830L PDF

    Contextual Info: AO8830 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8830/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable


    Original     		AO8830 AO8830/L AO8830 AO8830L -AO8830L PDF

    Contextual Info: AO8830 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8830/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable


    Original     		AO8830 AO8830/L AO8830 AO8830L -AO8830L PDF

    Contextual Info: AO8830 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8830 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected.


    Original     		AO8830 AO8830 AO8830L PDF