AO8801 Search Results
AO8801 Datasheets (5)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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AO8801 | Alpha & Omega Semiconductor | Dual P-Channel Enhancement Mode Field Effect Transistor | Original | 106.32KB | 4 | ||
AO8801A | Alpha & Omega Semiconductor | Load Switch - 20V P-Channel MOSFET | Original | 354.65KB | 5 | ||
AO8801A_001 | Alpha & Omega Semiconductor | MOSFET 2P-CH 8TSSOP | Original | 784.21KB | |||
AO8801AL | Alpha & Omega Semiconductor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2P-CH 20V 4.5A 8TSSOP | Original | 353.34KB | |||
AO8801L | Alpha & Omega Semiconductor | Dual P-Channel Enhancement Mode Field Effect Transistor | Original | 106.32KB | 4 |
AO8801 Price and Stock
Alpha & Omega Semiconductor AO8801MOSFET 2P-CH 20V 4.7A 8TSSOP |
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AO8801 | Reel |
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Alpha & Omega Semiconductor AO8801LMOSFET 2P-CH 20V 4.7A 8TSSOP |
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AO8801L | Bulk |
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Alpha & Omega Semiconductor AO8801AMOSFET 2P-CH 20V 4.5A 8TSSOP |
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AO8801A | Reel | 3,000 |
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AO8801A | 4,500 |
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Alpha & Omega Semiconductor AO8801ALMOSFET 2P-CH 20V 4.5A 8TSSOP |
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AO8801AL | Bulk |
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Alpha & Omega Semiconductor AO8801A_001MOSFET 2P-CH 20V 4.5A 8TSSOP |
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AO8801A_001 | Reel |
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AO8801 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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AO8801Contextual Info: AO8801 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8801 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. |
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AO8801 AO8801 | |
Contextual Info: Rev 1: Nov 2004 AO8801, AO8801L Green Product Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This |
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AO8801, AO8801L AO8801 | |
AO8801AContextual Info: AO8801A 20V P-Channel MOSFET General Description Product Summary The AO8801A uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. |
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AO8801A AO8801A | |
AO8801A
Abstract: 20V P-Channel Power MOSFET 500A
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AO8801A AO8801A 20V P-Channel Power MOSFET 500A | |
Contextual Info: AO8801 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8801 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. |
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AO8801 AO8801 | |
AO8801
Abstract: AO8801L
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AO8801 AO8801 AO8801L | |
AON6704L
Abstract: AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025
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O-252) O-263) MSOP-10 SC70-3 SC70-6 SC-89-3 SC-89-6 OD523 OD923 OT23-3 AON6704L AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025 | |
AO4946
Abstract: AOZ1242 AO4407A AOZ1242AI AO7408 AO3460 AO4936 AOZ1212AI AOD484 ao4466
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