AM2864 Search Results

2864AE-205

Abstract: M2864B
Contextual Info: Am2864AE Adva£ 8 1 9 2 x 8-Bit Electrically Erasable P R O M Devices DISTINCTIVE CHARACTERISTICS • • • • • 5-V o nly ope ra tio n M ilitary te m p e ra tu re range a v ailab le S e lf-tim e d W rite C ycle w ith o n -c h ip la tche s D ata Polling for e n d -o f-w rite in dicatio n

am2664be

Abstract: rvb ah
Contextual Info: Am2864BE Advanced Micro Devices 8192 x 8-Bit Electrically Erasable PROM DISTINCTIVE CHARACTERISTICS • • • • 5-V only operation Military temperature range available Self-timed Write Cycle with on-chip latches R eady/Busy pin and Data Polling for end-of-write

LM393

Abstract: 74HCTOO
Contextual Info: False-Write-Protect Circuit Design by Brian T. Johansen, Syntrex, Inc., and Anthony DiColli, Advanced Micro Devices, Inc. INTRODUCTION The Am2864AE/BE EEPROMs are internally protected from false writes when is below 3.0 V. When system logic levels are undefined, it is the supply voltage

eeprom 2864a

Abstract: AM2864A-2 rgv 527 Am2864A-3
Contextual Info: Am2864A DISTINCTIVE CHARACTERISTICS • • • • • 5-V only operation Military temperature range available Self-timed Write Cycle with on-chip latches Data Polling for end-of-write indication Data protection features to prevent writes from occur­ ring during V c c power-up/down

AM9864

Abstract: AM2864BE-300/BXA
Contextual Info: a Am2864BE AdVMgo 8192 X 8-Bit Electrically Erasable PRO M Devices DISTINCTIVE CHARACTERISTICS • • • • • 5-V only operation Military temperature range available Self-timed Write Cycle with on-chip latches Ready/Busy pin and Data Polling for end-of-write

TMS27256

Abstract: M27512FI TC571000D-15 et2732 TC571001D-15 4827128 27c1001a Toshiba TC571000D-20 28C256 27c32
Contextual Info: Device List by Manufacturer . 2716 2716BDC 2732 2732A 2764 Am27C64 Am2864AE Am2864BE 27128 Am27C128 27256 Am27C256 Am27H256 Am27C512 Am27C512L Am27C010 Am27H010 Am27LV010 Am27LV010B Am27C020 Am27LV020 Am27LV020B Am27C040 Am27C080 AT28C04 AT28C16 AT28C17 AT28HC16 AT28HC16L AT27HC64

Contextual Info: n Am2864AE Advanced Micro Devices 8192 x 8-Bit Electrically Erasable PROM DISTINCTIVE CHARACTERISTICS • • • • • 5-V only operation Military temperature range available Self-timed Write Cycle with on-chip latches Data Polling for end-of-write indication

TDA 2051

Abstract: AM2864AE-255DC
Contextual Info: a Am2864AE Adva“ £ 8192 x 8-Bit Electrically Erasable PROM Devices DISTINCTIVE CHARACTERISTICS • • • • • 5-V only operation Military temperature range available Self-timed Write Cycle with on-chip latches Data Polling for end-of-write indication

Contextual Info: ADV MIC RO inE 10RY}~Tb Ï Ë G5S7SEfl O O E b b l ? Am2864B 5a1 8 1 9 2 x 8 Electrically Erasable PROM Data protection features to prevent writes from occur­ ring during V cc power-up/down 32-byte page write mode Minimum endurance of 10,000 write cycles per byte with

AM2864B-3

Abstract: AM2864B-30 AM2864B-25
Contextual Info: Am2864B 8 1 9 2 x 8 Electrically Erasable PROM • • • • 5-V only operation Military temperature range available Self-timed Write Cycle with on-chip latches Ready/Busy pin and Data Polling for end-of-write indication • Data protection features to prevent writes from occur­

2864be

Abstract: M2864B
Contextual Info: Am2864BE 8192 X “'S 8-Bit Electrically Erasable PROM Devices DISTINCTIVE CHARACTERISTICS 5-V o n ly ope ra tio n M ilitary te m p e ra tu re range availab le S e lf-tim e d W rite C ycle w ith o n -c h ip la tc h e s R e a d y /B u s y pin and D a ta P olling fo r e n d -o f-w rite

AM28

Contextual Info: Die Business Am2864AE/BE DICE AGREEMENT AMD sells EEPROM dice at the commercial grade level to authorized distributors and OEM customers. Full testing is not possible on EEPROM dice. The Am2864AE/BE Dice Agreement see Figure 5-1 for an example describes the guarantees and limitations assodated with this business,

floating-gate

Abstract: Valence eeprom memory cell
Contextual Info: EEPROM Process Information PROCESS AND TECHNOLOGY AM D's EEPROM technology is based on the highly successful N-channel EPROM process that has had years of manufacturing history at AMD. To achieve the goal of electrical erasability, an additional masking step

eeprom 2864a

Abstract: X2864AD X2864ADMB-25 2864A X2864ADMB X2864ADMB35 X2864BDMB DQ2864-250 X2864ADI35 X2864AEMB25
Contextual Info: Cross-Reference and Conversion Guides COMPETITOR CROSS-REFERENCE GUIDE and DC timing and operating characteristics that are different. Please consult the data sheets or your local AMD representative for more details. The following table serves as a cross-reference guide for

Contextual Info: EEPROM Reliability The reliability of AMD's NS-18 process used in the fabrication of 64K EEPROMs is described in this report. The reliability monitors used at AMD were designed to predict the future operating life results by accelerat­ ing failure rates. The monitors include data from endur­

Device-List

Abstract: cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2
Contextual Info: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which

M38510

Contextual Info: REVISIONS DATE YR-MO-QA LTR DESCRIPTION A E d ito ria l changes throughout. Table I changes include: Vjh change, regrouped devices to d ifferen t lim its . Table I I , subgroups changed. Figures have been combined, some deleted. Quality Assurance and Quality conformance inspection paragraphs

am28c256

Contextual Info: Am28C256 3 2 K x 8 Electrically Erasable PROM DISTINCTIVE CHARACTERISTICS • • • 5-V only operation Military temperature range available Low-power CMOS - 60 mA active current - 1 mA standby current • • • - 100 /uA power-down current 64-byte page write

X2864AD

Abstract: X2864AEMB25 X2864AEMB-25 X2864ADMB-25 X2864AEMB X2864AEMB-35 X2864ADMB 60395 X2864ADMB-35 DM2864H-250
Contextual Info: REVISIONS DATE YR-MO-OA LTR DESCRIPTION A Editorial changes throughout. Table I changes include: V jh change, regrouped devices to different limits. Table II, subgroups changed. Figures have been combined, some deleted. Quality Assurance and Quality conformance inspection paragraphs

HD637B01VOP

Abstract: HD63701VOP HD63705VOP hd63701xop HD637A01VOP HD64F3048F16 MB8516 HD637B01YOP HD63701YOP lh57257
Contextual Info: ＡＦ−９７００ ＳＥＲＩＥＳ ＤＥＶＩＣＥ ＬＩＳＴ ＡＦ−９７０４ ＥＰＲＯＭ ＡＦ−９７０５ ＭＯＳ ＡＦ−９７０６ ＥＰＲＯＭ ＡＦ−９７０７ ＰＣ ＡＦ−９７２１ ＧＡＮＧ ＰＲＯＧＲＡＭＭＥＲ

st 27c256b

Abstract: 28C64 EPROM programmer Winbond 27c512 27c65 eprom AM2764A intel 27c512 eprom L27C128 2864a 28H256 27C512
Contextual Info: PRODUCT DATA SHEET AD62 479-913 and AD50 (479-834) Package Converters for E(E)PROMs and FLASH etc (PLCC) Product Code Pins on skt Pins on Base Wiring Code Package Base pitch" Miscellaneous AD62 32 28 01 P .6 Clamshell Product Code Pins on skt Pins on Base

ae29F2008

Abstract: ATMEL eeprom 2816A rom AE29f2008 HN462732G D27C64 AT27C64 ASD AE29F2008 d27C128 Toshiba tmm24128 HN2764
Contextual Info: SALES/INFORMATION HOTLINE: +44 0 1226 767404 GLV32 DEVICE SUPPORT LIST ICE Technology Ltd August 30 2001 DIP devices of 32 pins or less are supported without the need of ANY adapter. Adapter number (see adapter list). Required for PLCC, SOIC or greater than 48 pins.

EEPROM 2864 INTEL

Abstract: EEPROM 2864 2864 eeprom 2864 eeprom intel intel 2864 2864 rom CI EEPROM 2864 hn58064p-25 HN58064P-30 SEEQ 52B33
Contextual Info: - 76 - 2 3 6 4 m & tt £ iá g íc S l °C X4 '/ % > TAAC max (ns) TCAC max (ns) TOH ta x (ns) TO E max (ns) TO D max (ns) VDD (V) -h A SSL I DD/STAÍDBY (nA) V IL Biax (V) V IH min (V) ai C i max (pF) -h/m%n, m V O L / I VOL max (V/mA) V O H / IV O H min

am28c256

Contextual Info: ADV M IC R O ÍM E H O R Y } l b De | [1 2 5 7 5 2 6 Am28C256 0G2fe.fe.2fl i 27 32K x 8 Electrically Erasable PROM ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS • • • 5-V only operation Military temperature range available Low-power CMOS - 60 mA active current