ACTIVE POWER EASY 600 Search Results
ACTIVE POWER EASY 600 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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MGN1D120603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-6/-3V GAN | |||
MGN1D050603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-6/-3V GAN | |||
MGN1S0512MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-12V GAN | |||
MGN1S1212MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-12V GAN | |||
MGN1S1208MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-8V GAN |
ACTIVE POWER EASY 600 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: G -LINK GLT6400L16 Ultra Low Power 256k x 16 CMOS SRAM May 2001 Rev. 1.2 Features : Description : ∗ The GLT6400L16 is a low power CMOS Static RAM organized as 262,144 words by 16 bits. Easy memory expansion is provided by an active LOW CE1 and OE pin and active HIGH CE2. |
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GLT6400L16 GLT6400L16 32TYP 75TYP | |
Contextual Info: G -LINK GLT6400M16 Ultra Low Power 256k x 16 CMOS SRAM May 2001 Rev. 1.1 Features : Description : ∗ The GLT6400M16 is a low power CMOS Static RAM organized as 262,144 words by 16 bits. Easy memory expansion is provided by an active LOW CE1 and OE pin and active HIGH CE2. |
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GLT6400M16 GLT6400M16 120ns. 32TYP 75TYP | |
tba 2003Contextual Info: G -LINK GLT6400L16 Ultra Low Power 256k x 16 CMOS SRAM May 2003 Rev. 1.4 Features : Description : ∗ The GLT6400L16 is a low power CMOS Static RAM organized as 262,144 words by 16 bits. Easy memory expansion is provided by an active LOW CE1 and OE pin and active HIGH CE2. |
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GLT6400L16 GLT6400L16 70ns/85ns 32TYP 75TYP tba 2003 | |
Contextual Info: G -LINK GLT6400M16 Ultra Low Power 256k x 16 CMOS SRAM May 2001 Rev. 2.0 Features : Description : ∗ The GLT6400M16 is a low power CMOS Static RAM organized as 262,144 words by 16 bits. Easy memory expansion is provided by an active LOW CE1 and OE pin and active HIGH CE2. |
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GLT6400M16 GLT6400M16 120ns. 32TYP 75TYP | |
"256K x 16" SRAM PLCC
Abstract: GLT710008
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GLT6400M16 GLT6400M16 75TYP 36TYP "256K x 16" SRAM PLCC GLT710008 | |
TAA 691
Abstract: CY7C128A-20VXC C128A CY7C128A CY7C128A-15PC CY7C128A-15VC CY7C128A-15VXC CY7C128A-35VC CY7C128A-45PC
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CY7C128A CY7C128A TAA 691 CY7C128A-20VXC C128A CY7C128A-15PC CY7C128A-15VC CY7C128A-15VXC CY7C128A-35VC CY7C128A-45PC | |
TAA 691
Abstract: CY7C128A-20VXC transistor C128 C128A CY7C128A CY7C128A-15PC CY7C128A-15VC CY7C128A-15VXC CY7C128A-35VC CY7C128A-45PC
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CY7C128A CY7C128A TAA 691 CY7C128A-20VXC transistor C128 C128A CY7C128A-15PC CY7C128A-15VC CY7C128A-15VXC CY7C128A-35VC CY7C128A-45PC | |
Contextual Info: CY7C128A 2K x 8 Static RAM Features Functional Description • Automatic power-down when deselected The CY7C128A is a high-performance CMOS static RAM organized as 2048 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable CE , and active LOW |
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CY7C128A CY7C128A | |
C185A
Abstract: CY7C185 CY7C185A CY7C185A-15DMB
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CY7C185A CY7C185A 300milwide C185A CY7C185 CY7C185A-15DMB | |
CY7C161A
Abstract: CY7C162A
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CY7C161A CY7C162A 7C161A) 38-00116-C 28-Lead 300-Mil) 28-Pin MIL-STD-1835 CY7C161A CY7C162A | |
CY7C161
Abstract: CY7C162 C1624
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CY7C161 CY7C162 15-ns 7C161) CY7C161 CY7C162 C1624 | |
GLT6100L08LL-100TS
Abstract: GLT6100L08LL-35ST GLT6100L08LL-35TS GLT6100L08LL-45ST GLT6100L08LL-45TS GLT6100L08LL-55TS GLT6100L08LL-70TS GLT6100L08LL-85TS
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GLT6200L08 GLT6200L08 32-TSOPI 36TYP 75TYP GLT6100L08LL-100TS GLT6100L08LL-35ST GLT6100L08LL-35TS GLT6100L08LL-45ST GLT6100L08LL-45TS GLT6100L08LL-55TS GLT6100L08LL-70TS GLT6100L08LL-85TS | |
GLT710008Contextual Info: G -LINK GLT6100L16 Ultra Low Power 64k x 16 CMOS SRAM May 2000 Rev. 0.3 Features : Description : ∗ The GLT6100L16 is a low power CMOS Static RAM organized as 65,536 words by 16 bits. Easy memory expansion is provided by an active LOW CE Low-power consumption. |
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GLT6100L16 GLT6100L16 44pin GLT710008-15T 128Kx8 300mil GLT44016-40J4 256Kx16 400mil GLT710008 | |
Contextual Info: G -LINK GLT6100L16 Ultra Low Power 64k x 16 CMOS SRAM May 2000 Rev. 0.3 Features : Description : ∗ The GLT6100L16 is a low power CMOS Static RAM organized as 65,536 words by 16 bits. Easy memory expansion is provided by an active LOW CE Low-power consumption. |
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GLT6100L16 GLT6100L16 44pin GLT710008-15T 128Kx8 300mil GLT44016-40J4 256Kx16 400mil | |
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GLT6200L08LL-55
Abstract: GLT6200L08LL-70 GLT6200L08LL-85 GLT6200L08LLI-55 GLT6200L08LLI-70 GLT6200L08LLI-85 GLT6200L08SL-55 GLT6200L08SL-70 GLT6200L08SL-85
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GLT6200L08 GLT6200L08 32-sTSOP. 48Ball 36TYP 75TYP GLT6200L08LL-55 GLT6200L08LL-70 GLT6200L08LL-85 GLT6200L08LLI-55 GLT6200L08LLI-70 GLT6200L08LLI-85 GLT6200L08SL-55 GLT6200L08SL-70 GLT6200L08SL-85 | |
GLT6400M08LL-120
Abstract: GLT6400M08SL-120 GLT6400M08SLI-120
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GLT6400M08 GLT6400M08 120ns. 48-fpBGA GLT6400M08LL-120 GLT6400M08SL-120 GLT6400M08SLI-120 | |
100L08
Abstract: GLT710008 8X13
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GLT6100L08 GLT6100L08 GLT44016-40J4 256Kx16 400mil 8x20mm 100L08 GLT710008 8X13 | |
GLT6400L08
Abstract: GLT6400L08LL-70 GLT6400L08LL-85 GLT6400L08SL-70 GLT6400L08SL-85 GLT6400L08SLI-70 GLT6400L08SLI-85 SRAM 10ns
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GLT6400L08 GLT6400L08 445mil GLT6400L08LL-70 GLT6400L08LL-85 GLT6400L08SL-70 GLT6400L08SL-85 GLT6400L08SLI-70 GLT6400L08SLI-85 SRAM 10ns | |
Contextual Info: G -LINK GLT6200L08 Ultra Low Power 256k x 8 CMOS SRAM Aug 2001 Rev. 1.2 Features : Description : ∗ The GLT6200L08 is a low power CMOS Static RAM organized as 262,144 x 8 bits. Easy memory expansion is provided by an active LOW CE1 an Low-power consumption. |
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GLT6200L08 GLT6200L08 32-sTSOP. 48Ball 36TYP 75TYP | |
Contextual Info: G -LINK GLT6400M08 Ultra Low Power 512k x 8 CMOS SRAM Aug 2001 Rev.3.0 Features : Description : ∗ The GLT6400M08 is a low power CMOS Static RAM organized as 524,288 x 8 bits. Easy memory expansion is provided by an active LOW CE1 an Low-power consumption. |
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GLT6400M08 GLT6400M08 120ns. 445mil | |
C1915
Abstract: CY7C192-25PC 7C192-12 7C192-15 C191 CY7C191 CY7C192 C1919
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CY7C191 CY7C192 7C191) C1915 CY7C192-25PC 7C192-12 7C192-15 C191 CY7C191 CY7C192 C1919 | |
Contextual Info: CY7C185A CYPRESS SEMICONDUCTOR • High speed — 20 ns • CMOS for optimum speed/power • Low active power — 743 mW • Low standby Power — 220 mW • TTL-compatible inputs and outputs • Easy memory expansion with CEi, CE2 and OE features • Automatic power-down when |
OCR Scan |
CY7C185A CY7C185A 300-mil-wide | |
c1918
Abstract: C1915 CY7C192-25PC 7C192-12 7C192-15 C191 CY7C191 CY7C192 C1914
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CY7C191 CY7C192 7C191) c1918 C1915 CY7C192-25PC 7C192-12 7C192-15 C191 CY7C191 CY7C192 C1914 | |
Contextual Info: Features * Industry Standard Architecture - Low Cost Easy-to-Use Software Tools * High-Speed, Electrically-Erasable Programmable Logic Devices - 7.5 ns Maximum Pin-to-Pin Delay * Several Power Saving Options Device lcc, Stand-By lcc, Active ATF22V10B 85 mA |
OCR Scan |
ATF22V10B ATF22V10BQ ATF22V10BQL ATF22V10B 24-Lead, |