AAS TRANSISTOR Search Results

2.5 GHz RF power transistors with s-parameters

Contextual Info: 1Stanford Microdevices SHF-0186K Product Description Stanford M icrodevices’ SHF-0186K is a AIG aAs/G aAs Heterostructure FET housed in a low cost surface mount plastic package. HFET technology im proves breakdown voltage for high drain voltage operation. Its low Schottky

Contextual Info: S Stanford Microdevices SHF-0187 Product Description Stanford M icrodevices’ SHF-0187 is a AIG aAs/G aAs Heterostructure FET housed in a low cost drop-in package. HFET technology improves breakdown voltage for high drain voltage operation. Its low Schottky leakage current

Contextual Info: 1Stanford Microdevices Product Description SHF-0186K Stanford M icrodevices’ SHF-0186K is a AIG aAs/G aAs Heterostructure FET housed in a low cost surface mount plastic package. HFET technology im proves breakdown voltage for high drain voltage operation. Its low Schottky

fet K 793

Abstract: A/LM 793
Contextual Info: Stanford Microdevices SHF-0187 Product Description Stanford M icrodevices’ SHF-0187 is a AIG aAs/G aAs Heterostructure FET housed in a low cost drop-in package. HFET technology improves breakdown voltage for high drain voltage operation. Its low Schottky leakage current

Contextual Info: f¡iS Siati ford M ¡.crudev ices Product Description SHF-0187 Stanford M icrodevices’ SHF-0187 is a AIG aAs/G aAs Heterostructure FET housed in a low cost drop-in package. HFET technology improves breakdown voltage for high drain voltage operation. Its low Schottky leakage current

Contextual Info: SHF-0186K Product Description Stanford M icrodevices’ SHF-0186K is a AIG aAs/G aAs Heterostructure FET housed in a low cost surface mount plastic package. HFET technology im proves breakdown voltage for high drain voltage operation. Its low Schottky leakage current im proves power added efficiency.

BCP51M

Abstract: BCP52M BCP53M BCP54M BCP56M SCT595 SCT-595
Contextual Info: BCP51M.BCP53M PNP Silicon AF Transistor 4
For AF driver and output stages 5
High collector current
Low collector-emitter saturation voltage 3
Complementary types: BCP54M.BCP56M NPN 2 1 VPW05980 Type Marking Pin Configuration Package BCP51M AAs

BCP51M

Abstract: BCP52M BCP53M BCP54M BCP56M SCT595 FE1600 EHP00264
Contextual Info: BCP51M.BCP53M PNP Silicon AF Transistor 4
For AF driver and output stages 5
High collector current
Low collector-emitter saturation voltage 3
Complementary types: BCP54M.BCP56M NPN 2 1 VPW05980 Type Marking Pin Configuration Package BCP51M AAs

microwave limiter

Abstract: MMIC limiter microwave chip limiter LNA at microwave range mmic A TRANSISTOR noise figure measurements MTT-38 microwave receiver mtt38 AuSn solder
Contextual Info: April 2003 New Technology Advance in Integrated High Power Limiter/LNA Performance by Inder J. Bahl, M/A-COM, Inc. G aAs MMIC devices are commonly used in both commercial and military microwave systems. Because they comprise fine transistor geometries, these devices are susceptible

727 diode

Abstract: diode 716 transistor 717 TRANSISTOR 726 716 transistor cfy transistor 35 CFY
Contextual Info: G aAs Components Infineon •»ihnciogift* HiRel Discretes and Microwave Semiconductors 11 HiRel Discretes and Microwave Semiconductors Table of Contents Component Types Package Types Title Page 11.1 Preliminary Remarks 716 11.2 Introduction to HiRel and Space Qualified Devices

Q62702-C2594

Contextual Info: SIEMENS BCP 51M . BCP 53M PNP Silicon AF Transistor • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP 54M.BCP 56M NPN BCP 51M AAs Q62702-C2592 BCP 52M AEs Q62702-C2593

directional coupler chip 8 GHz

Abstract: x-band limiter electromagnetic pulse generator x-band mmic lna 5310 MMIC limiter band Limiter circulator monolithic "electromagnetic pulse" electromagnetic pulse
Contextual Info: An Examination of Recovery Time of an Integrated Limiter/LNA • Jim Looney, David Conway, and Inder Bahl G aAs monolithic microwave integrated circuits MMICs are widely used in commercial and military microwave systems. Due to the fine geometry used in MMIC transistors, these circuits are susceptible to

AN-A002

Abstract: AN-G002 testing amplifier circuit ATF-10136 TF-10136 low noise design ATF 10136 stub tuner matching 10136 stub tuner waveguide AM Noise Reduction System
Contextual Info: W hpfiM %PH AE CWKLAERT DT mL' AN-G 002 A TF-10136 Dem onstration Am plifier Novem ber, 1990 Introduction This Applications Bulletin describes a one stage low noise am plifier designed using the HP ATF-10136 G aAs FET transistor. This amplifier demonstrates the capabilities of this

L1102

Abstract: "sot-90B" sot90b LF 428 4N38 4N38A IEC134 OPTOCOUPLER dc SOT-90B
Contextual Info: 4N38 4N38A » OPTOCOUPLERS 1— \ O ptically coupled isolators consisting o f an infrared em itting G aAs diode and an npn silicon photo­ transistor. They are suitable fo r use w ith T T L integrated circuits. Features • High maximum o u tp u t voltage

SHF-0186-TR3

Contextual Info: Stanford Microdevices Product Description SHF-0186 Stanford M icrodevices’ SHF-0186 is a AIG aAs/GaAs Heterostructure FET housed in a low cost surface-m ount plastic package. HFET technology im proves breakdown voltage for high drain voltage operation. Its low Schottky

PHILIPS CNX38

Abstract: CBC 184 transistor CNX38 CNX38U 181 OPTOCOUPLER
Contextual Info: N AMER PHILIPS/DISCRETE 2SE D • fc.bS3tm Jl GG2GT51 T CNX38 OPTOCOUPLER O ptically coupled isolator consisting o f an infrared emitting G aAs diode and a silicon npn phototransistor w ith accessible base. Plastic envelope. Suitable fo r T T L integrated circuits.

Contextual Info: Panasonic Transmissive Photosensors Photo Interrupters CNA1015 Photo Interrupters U nit : mm • Outline - CNA1015 is a transmittive photosensor series in which a high efficiency G aAs infrared light em itting diode is used as the light em itting element, and a high sensitivity

Contextual Info: Panasonic Transmissive Photosensors Photo Interrupters ON1387 Photo Interrupters U nit : mm • Outline ON1387 is a transm ittive photosensor series in which a high efficiency G aAs infrared light em itting diode is used as the light em itting element, and a high sensitivity

ON1114

Abstract: 5002A
Contextual Info: Panasonic Transmissive Photosensors Photo Interrupters ON1114 Photo Interrupter For contactless SW, object detection • Outline O N I 114 is a photocoupler in w hich a high efficien cy G aAs infrared light em itting diode is used as the light em itting elem ent,

Transistor 337

Abstract: BD335 BD337 c 337 25 IM 337 BD331 12 v transistors 337 bd338 OF IC 337 T3329
Contextual Info: BD331; 333 BD335; 337 J^ P hilips international » sle • tiigöel DüMSflöb aas « p h i n SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; plastic SOT-82 envelope for clip mounting; can also be soldered

OPTOCOUPLER dc

Abstract: H11B1 v optocoupler H11b1 H11B1 H11B2 H11B3 IEC134 sot908
Contextual Info: H11B1 H11B2 H11B3 T O OPTOCOUPLERS O ptically coupled isolators consisting o f an infrared em itting G aAs diode and an npn silicon photo­ Darlington transistor. Features • Very high o u tp u t/in p u t DC current transfer ratio • isolation voltage o f 2 k V RMS and 2.82 kV DC

TRL15

Abstract: cfy transistor CFY 18 heft DRO components
Contextual Info: In fineon fschncio^iej 15 GHz G aAs-FE T B u ffe re d O s c illa to r A p p lic a tio n Note No. 010 A buffered stable oscillator has been developed using a parallel feedback circuit, two CFY 35 GaAs-field effect transistors and a dielectric resonator. !n addition a spacer for

2SK281

Abstract: 203l2 NE218 NE21889 NE21800
Contextual Info: NEC/ L427414 OOOlblH Q 1SE D CALIFORNIA NEC T - 3 ,h lS LOW NOISE X-BAND G aAs MESFET NE21800 NE21889 FEATURES DESCRIPTION AND APPLICATIONS • V E R Y H IG H fmax: 60 G H z The NE218 is a 1 pm recessed gate gallium arsenide GaAs n-channel field effect transistor (FET). Offering low noise figure

MA4GM2

Contextual Info: GaAs FET MMIC Control Product Process Screening and Quality Procedures In processing G aAs FE T MMIC Control Products, consistency and reproducibility is ensured by measuring key electrical parameters on each wafer at the main steps and using the results for statistical process control. If a process goes out