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Contextual Info: A88 1. General Description & Features General Description This device is Digital Image Signal Processor ISP for Security Camera System. The main features are Adaptive Contrast Enhancer (ACE), External Line-Lock, 2D Noise Reduction, 2 Auto (AE, AWB) control, Y/C processor, OSD, Video Encoder and Embedded CPU are included to realize above features.
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A08S
Abstract: 15081 GOSC MQ K1 k6 diode
Contextual Info: A »» PULSE POWER APPLICATIONS C ü R R E í iilP R O W B ^ D íQ D E V rrm: Vdc max: It s m : Tvj max: Freq.: 12.000V 0,85 x V rrm 1min 60 kA / tp = 1 ms 125 °C For Single Pulse Applications (Tvj before Pulse max. 50°C) Fm: Weight: 20 kN ±10% 1,0 kg
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semicon100050-dla08s15081+3goscmq k1k6 diode
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Contextual Info: Philips Semiconductors Product specification Silicon planar epitaxial high-speed diode FEATURES • Plastic SMD envelope • High switching speed B A S 16W QUICK REFERENCE DATA SYMBOL MAX. UNIT continuous reverse voltage 75 V V RRM repetitive peak reverse
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ot323bas16w |
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b72 voltage regulator
Abstract: marking A93 A75 marking code marking a86
Contextual Info: MN18R1624 8 DF0 MP18R1624(8)DF0 Revision History Version 1.0 (May 2003) - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMMTM Module Datasheet. Version 1.1 (Aug. 2003) - Add PGA type 144MB NexMod Module. - Add the discription of index pin marking.
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mn18r1624mp18r1624288mbit144mb+716mx18288mb16k/32msb72 voltage regulatormarking a93a75 marking codemarking a86
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U411
Abstract: L32* MARKING U166 1536A2 marking L36 1531A2 1531A
Contextual Info: 1500 series Toggle switches - insulated lever and bushing Distinctive features and specifications ❑ UL and VDE EN 61058-1 approved A ❑ Variety of actuator styles and colours ELECTRICAL SPECIFICATIONS • Max. current/voltage rating with resistive load :
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250vac125vac12vdc500vdc+1048dia492dia137diau411l32* markingu1661536a2marking l361531a21531a
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1531A2
Abstract: marking L36 A88 marking
Contextual Info: 1500 series Toggle switches - insulated lever and bushing Distinctive features and specifications UG1006-A ❑ UL approved A ❑ Variety of actuator styles and colours ELECTRICAL SPECIFICATIONS • Max. current/voltage rating with resistive load : 6A 250VAC 10.000 cycles
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ug1006-a250vac125vac12vdc+7500vdc48dia492dia137dia1531a2marking l36a88 marking
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marking a86
Contextual Info: MN18R1624 8 DF0 MP18R1624(8)DF0 Revision History Version 1.0 (May 2003) - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMMTM Module Datasheet. Version 1.1 (Aug. 2003) - Add PGA type 144MB NexMod Module. - Add the discription of index pin marking.
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mn18r1624mp18r1624288mbit144mb+416mx18288mb16k/32msmarking a86
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B83 004
Abstract: marking a86 b72 voltage regulator
Contextual Info: MN18R162 4 8DF0 MP18R162(4)8DF0 Revision History Version 1.0 (May 2003) - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMM Datasheet. Version 1.1 (Aug. 2003) - Add PGA type 144MB NexMod. - Add the discription of index pin marking. - Correct the physical dimension of PGA NexMod.
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mn18r162mp18r162288mbit144mb+616mx18288mb16k/32msb83 004marking a86b72 voltage regulator
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siemens a55
Abstract: siemens A70 marking b28 siemens a57 siemens b38
Contextual Info: HYR16xx30/HYR18xx20G Rambus RIMM Modules Direct RDRAM RIMM Modules with 128/144 Mb RDRAMs Perliminary Information Rev. 0.9 Overview Form Factor The Direct Rambus RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including
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hyr16xx30/hyr18xx20g128mb/144mb600mhz+8800mhz128mbhyr16xx30g/hyr18xx20gsiemens a55siemens a70marking b28siemens a57siemens b38
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HYR163249G-653
Abstract: HYR163249G-840 HYR166449G-653 HYR166449G-845 A17 INFINEON
Contextual Info: HYR16xx49G 64MB & 128MB Rambus RIMM Modules Direct RDRAM RIMM Modules with 288 Mbit RDRAMs Overview The Direct Rambus RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory, personal computers,
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hyr16xx49g128mbhyr163249g-653hyr163249g-840+3hyr166449g-653hyr166449g-845a17 infineon
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MARKING CODE B82
Abstract: a87 marking Marking b66 marking a86 MARKING B83 marking a75
Contextual Info: MR18R162WAG0 Change History Version 1.0 January 2002 * First copy. * Based on the 1.0 ver. 288Mbit RIMM Module Datasheet Version 1.1 (July 2002) * Based on the 1.0 ver.(January 2002) 288Mbit A-die 32d RIMM Module Datasheet * eliminate "Target" etc. Page 0
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mr18r162wag0288mbit16mx1832pcs+8288mb16k/32msmarking code b82a87 markingmarking b66marking a86marking b83marking a75
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MARKING B83
Abstract: A74 marking diode u2 a90 marking A32 HYR163200G-653 HYR163200G-745 HYR163200G-840 HYR163200G-845 HYR183200G-653 HYR183200G-745
Contextual Info: HYR16 18 3200G 64/72 MByte RIMM Modules Direct RDRAM RIMM Modules Perliminary Information Rev. 0.9 Features Overview n The Direct Rambus RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including
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hyr163200g600mhz800mhz+11128mbmarking b83a74 markingdiode u2 a90marking a32hyr163200g-653hyr163200g-745hyr163200g-840hyr163200g-845hyr183200g-653hyr183200g-745
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a80 marking code
Abstract: MR18R162WDG0-CM8 B83 004 marking code B38 MR18R162WDG0 MR18R162WDG0-CK8 marking A70 marking code b84
Contextual Info: MR18R162WDG0 Change History Version 1.0 July 2002 * First copy. * Based on the 1.1 ver.(July 2002) 288Mbit A-die 32d RIMM Module Datasheet Page 0 Version 1.0 July. 2002 MR18R162WDG0 (16Mx18)*32pcs RIMM Module based on 288Mb D-die, 32s banks,16K/32ms Ref, 2.5V
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mr18r162wdg0288mbit16mx1832pcs+9288mb16k/32msa80 marking codemr18r162wdg0-cm8b83 004marking code b38mr18r162wdg0-ck8marking a70marking code b84
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a74 marking code
Abstract: MARKING B82 MARKING B83 a80 marking code B11 marking code Device marking code B12 B13 B14 B15 B16 marking A45 a64 marking code A79 marking code a86 diode
Contextual Info: MR18R162WDG0 Change History Version 1.0 July 2002 * First copy. * Based on the 1.1 ver.(July 2002) 288Mbit A-die 32d RIMM Datasheet Page 0 Version 1.0 July. 2002 MR18R162WDG0 (16Mx18)*32pcs RIMMTM Module based on 288Mb D-die, 32s banks,16K/32ms Ref, 2.5V
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mr18r162wdg0288mbit16mx1832pcs+12288mb16k/32msa74 marking codemarking b82marking b83a80 marking codeb11 marking codedevice marking code b12 b13 b14 b15 b16marking a45a64 marking codea79 marking codea86 diode
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a80 marking code
Abstract: marking A32 marking A86 marking code B38 samsung electronics logo
Contextual Info: MR16R0828ER T 0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.0ver. 128Mb D-die Consumer RIMM Module Datasheet. Page 0 Version 1.0 July 2002 MR16R0828ER(T)0 (8Mx16)*8pcs Consumer RIMM Module based on 128Mb E-die, 32s banks,16K/32ms Ref, 2.5V
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mr16r0828er128mb8mx1616k/32ms+5a80 marking codemarking a32marking a86marking code b38samsung electronics logo
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Contextual Info: MR16R0828DR T 0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.0ver. 128Mb B-die Consumer RIMM Module Datasheet. Page 0 Version 1.0 July 2002 MR16R0828DR(T)0 (8Mx16)*8pcs Consumer RIMM Module based on 128Mb D-die, 32s banks,16K/32ms Ref, 2.5V
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Contextual Info: 14-Serie 4400-4600-A_15-Serie 4400-4600-A 21/11/12 14:05 Page88 4600 and 4400 series Toggle switches Distinctive features and specifications ❑ High current/voltage rating in a small case ❑ Butt action contacts ❑ Insulated or metal lever A ❑ UL, CSA and VDE EN 61058-1 approved
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14-serie4400-4600-a15-serie400-4600-a+4page88250vac125vac500vdc
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transistor marking A21
Abstract: a74 marking code b37 diode
Contextual Info: Preliminary MR16R0828ER T 0 Change History Version 1.0 (July 2002) - Preliminary * First copy. * Based on the 1.0ver. 128Mb RDRAMs(D-die) Consumer RIMM Datasheet. Page 0 Version 1.0 July 2002 Preliminary MR16R0828ER(T)0 (8Mx16)*8pcs Consumer RIMMTM Module based on 128Mb E-die, 32s banks,16K/32ms Ref, 2.5V
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mr16r0828er128mb8mx1616k/32ms+3transistor marking a21a74 marking codeb37 diode
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MR16R0824BS0-CG6
Abstract: MR16R0828BS0-CG6
Contextual Info: Preliminary MR16R0824 8 BS0 Change History Version 1.0 (October 2000) - Preliminary * First copy. * Based on the 1.1ver. 128/144Mb RDRAMs(B-die) base RIMM Datasheet. Page 0 Version 1.0 Oct. 2000 Preliminary MR16R0824(8)BS0 (8Mx16)*4(8)pcs Consumer RIMMTM Module based on 128Mb B-die, 32s banks,16K/32ms Ref, 2.5V
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b41 Marking
Contextual Info: MR18R162WEG0 Change History Version 0.1 January 2004 * First copy. * Based on the 1.0 ver.(July 2002) 288Mbit D-die 32d RIMM Module Datasheet Version 1.0 (May 2004) * Eliminate "Preliminary" Page 0 Version 1.0 May 2004 MR18R162WEG0 (16Mx18)*32pcs RIMM Module based on 288Mb E-die, 32s banks,16K/32ms Ref, 2.5V
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mr18r162weg0288mbit16mx1832pcs+3288mb16k/32msb41 marking
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A76 MARKING CODE
Abstract: a77 package marking a80 marking code marking A32 marking A45 marking code B38 MR18R162WEG0-CM8 MARKING B17 MARKING CODE B82 marking a86
Contextual Info: Preliminary MR18R162WEG0 Change History Version 0.1 January 2004 * First copy. * Based on the 1.0 ver.(July 2002) 288Mbit D-die 32d RIMM Module Datasheet Page 0 Version 0.1 Jan. 2004 Preliminary MR18R162WEG0 (16Mx18)*32pcs RIMM Module based on 288Mb E-die, 32s banks,16K/32ms Ref, 2.5V
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mr18r162weg0288mbit16mx1832pcs+12288mb16k/32msa76 marking codea77 package markinga80 marking codemarking a32marking a45marking code b38mr18r162weg0-cm8marking b17marking code b82marking a86
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transistor marking A21
Abstract: a74 marking code b82 400 B83 004 marking B44 MARKING CODE b48
Contextual Info: MR18R162WAG0 Change History Version 1.0 January 2002 * First copy. * Based on the 1.0 ver. 288Mbit RDRAMs RIMM Datasheet Version 1.1 (July 2002) * Based on the 1.0 ver.(January 2002) 288Mbit A-die 32d RIMM Datasheet * eliminate "Target" etc. Page 0 Version 1.1 July. 2002
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mr18r162wag0288mbit16mx1832pcs+8288mb16k/32mstransistor marking a21a74 marking codeb82 400b83 004marking b44marking code b48
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A23 851 diode
Abstract: diode 910 b34 HYMR225616 HYMR26416 256MX16 H-745
Contextual Info: TM RIMM Module with 256/288Mb RDRAMs Preliminary Overview Key Timing Parameters/Part Numbers The Rambus RIMMTM module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other
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256/288mb600mhz711mhz800mhz+6a23 851 diodediode 910 b34hymr225616hymr26416256mx16h-745
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H-840
Abstract: H-745
Contextual Info: TM RIMM Module with 256/288Mb RDRAMs Preliminary Revision History * Rev. 0.95 Date : 2001.07.23 1. Page2, 7, 8, 10, 12 : Add 2D RIMM part Rev. 0.95 / July.01 1 TM RIMM Module with 256/288Mb RDRAMs Preliminary Overview Key Timing Parameters/Part Numbers The‘Rambus RIMMTM module is a general purpose
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