A77 PACKAGE MARKING Search Results

marking JT

Abstract: 28 MARKING Q62702-A77
Contextual Info: BAS 28 Silicon Switching Diode Array • • For high-speed switching Electrically isolated diodes Type Marking Ordering code for versions In bulk Ordering code for versions on 8 mm-tape Package BAS 28 JT Q62702-A163 Q62702-A77 SOT 143 Maximum ratings Parameter

TRANSISTOR A77

Abstract: A77 marking a77 package marking Marking code mps
Contextual Info: MPSA77 MPSA77 PNP Darlington Transistor • This device is designed for applications requiring extremely high current gain at currents to 800mA. • Sourced from process 61. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings * Ta=25°C unless otherwise noted

b72 voltage regulator

Abstract: marking A93 A75 marking code marking a86
Contextual Info: MN18R1624 8 DF0 MP18R1624(8)DF0 Revision History Version 1.0 (May 2003) - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMMTM Module Datasheet. Version 1.1 (Aug. 2003) - Add PGA type 144MB NexMod Module. - Add the discription of index pin marking.

B83 004

Abstract: marking a86 b72 voltage regulator
Contextual Info: MN18R162 4 8DF0 MP18R162(4)8DF0 Revision History Version 1.0 (May 2003) - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMM Datasheet. Version 1.1 (Aug. 2003) - Add PGA type 144MB NexMod. - Add the discription of index pin marking. - Correct the physical dimension of PGA NexMod.

marking a86

Contextual Info: MN18R1624 8 DF0 MP18R1624(8)DF0 Revision History Version 1.0 (May 2003) - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMMTM Module Datasheet. Version 1.1 (Aug. 2003) - Add PGA type 144MB NexMod Module. - Add the discription of index pin marking.

A77 SOT23

Abstract: TI Actual Topside Mark DCK0006A YZR0006BBA a78a
Contextual Info: LMV981-N, LMV982-N www.ti.com SNOS976L – NOVEMBER 2001 – REVISED MARCH 2013 LMV981-N Single / LMV982 Dual 1.8V, RRIO Operational Amplifiers with Shutdown Check for Samples: LMV981-N, LMV982-N FEATURES DESCRIPTION • LMV981-N/LMV982 are low voltage, low power

a80 marking code

Abstract: marking A32 marking A86 marking code B38 samsung electronics logo
Contextual Info: MR16R0828ER T 0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.0ver. 128Mb D-die Consumer RIMM Module Datasheet. Page 0 Version 1.0 July 2002 MR16R0828ER(T)0 (8Mx16)*8pcs Consumer RIMM Module based on 128Mb E-die, 32s banks,16K/32ms Ref, 2.5V

Contextual Info: MR16R0828DR T 0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.0ver. 128Mb B-die Consumer RIMM Module Datasheet. Page 0 Version 1.0 July 2002 MR16R0828DR(T)0 (8Mx16)*8pcs Consumer RIMM Module based on 128Mb D-die, 32s banks,16K/32ms Ref, 2.5V

MARKING B83

Contextual Info: MR16R0828DR T 0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.0ver. 128Mb RDRAMs(B-die) Consumer RIMM Datasheet. Page 0 Version 1.0 July 2002 MR16R0828DR(T)0 (8Mx16)*8pcs Consumer RIMMTM Module based on 128Mb D-die, 32s banks,16K/32ms Ref, 2.5V

Contextual Info: MS18R3266AH0 Revision History Version 0.1 November 2003 - Preliminary - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMM Module Datasheet. Version 1.0 (May 2004) - Eliminate "Preliminary" Page 0 Rev. 1.0 May 2004 MS18R3266AH0 (32Mx18)*6pcs SO-RIMM™ based on 576Mb A-die, 32s banks,32K/32ms Refresh, 2.5V

MARKING CODE B82

Abstract: a87 marking Marking b66 marking a86 MARKING B83 marking a75
Contextual Info: MR18R162WAG0 Change History Version 1.0 January 2002 * First copy. * Based on the 1.0 ver. 288Mbit RIMM Module Datasheet Version 1.1 (July 2002) * Based on the 1.0 ver.(January 2002) 288Mbit A-die 32d RIMM Module Datasheet * eliminate "Target" etc. Page 0

A74 marking

Abstract: a80 marking code MS18R3266AH0-CT9 a74 marking code diode code B74 marking A32 marking code B38
Contextual Info: MS18R3266AH0 Preliminary Revision History Version 0.1 November 2003 - Preliminary - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMM Module Datasheet. Page 0 Rev. 0.1 Nov. 2003 MS18R3266AH0 Preliminary (32Mx18)*6pcs SO-RIMM™ based on 576Mb A-die, 32s banks,32K/32ms Refresh, 2.5V

a80 marking code

Abstract: MR18R162WDG0-CM8 B83 004 marking code B38 MR18R162WDG0 MR18R162WDG0-CK8 marking A70 marking code b84
Contextual Info: MR18R162WDG0 Change History Version 1.0 July 2002 * First copy. * Based on the 1.1 ver.(July 2002) 288Mbit A-die 32d RIMM Module Datasheet Page 0 Version 1.0 July. 2002 MR18R162WDG0 (16Mx18)*32pcs RIMM Module based on 288Mb D-die, 32s banks,16K/32ms Ref, 2.5V

b41 Marking

Contextual Info: MR18R162WEG0 Change History Version 0.1 January 2004 * First copy. * Based on the 1.0 ver.(July 2002) 288Mbit D-die 32d RIMM Module Datasheet Version 1.0 (May 2004) * Eliminate "Preliminary" Page 0 Version 1.0 May 2004 MR18R162WEG0 (16Mx18)*32pcs RIMM Module based on 288Mb E-die, 32s banks,16K/32ms Ref, 2.5V

Contextual Info: MS18R1622 4/8 AH0 Revision History Version 1.0 (December 2001) - First copy. - Based on the 1.1 ver. 256/288Mbit RDRAMs(A-die) base RIMM Datasheet. Version 1.1(July 2002) - Based on the 1.0 ver. 256/288Mbit RDRAMs(A-die) base SO-RIMM Datasheet. - Add 1066MHz-35 binning

marking B44

Abstract: DH0 165
Contextual Info: MS18R1622 4/8 DH0 Revision History Version 1.0 (July 2002) - Based on the 1.1 ver. 256/288Mbit RDRAMs(A-die) base SO-RIMM Datasheet. Rev. 1.0 July 2002 Page 0 MS18R1622(4/8)DH0 ( 16Mx18)*2(/4/8)pcs SO-RIMM based on 288Mb D-die, 32s banks,16K/32ms Refresh, 2.5V

A23 851 diode

Abstract: diode 910 b34 HYMR225616 HYMR26416 256MX16 H-745
Contextual Info: TM RIMM Module with 256/288Mb RDRAMs Preliminary Overview Key Timing Parameters/Part Numbers The Rambus RIMMTM module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other

H-840

Abstract: H-745
Contextual Info: TM RIMM Module with 256/288Mb RDRAMs Preliminary Revision History * Rev. 0.95 Date : 2001.07.23 1. Page2, 7, 8, 10, 12 : Add 2D RIMM part Rev. 0.95 / July.01 1 TM RIMM Module with 256/288Mb RDRAMs Preliminary Overview Key Timing Parameters/Part Numbers The‘Rambus RIMMTM module is a general purpose

Contextual Info: MS18R1622 4/8 DH0 Revision History Version 1.0 (July 2002) - Based on the 1.1 ver. (July 2002) 288Mbit A-die SO-RIMM Module Datasheet. Page 0 Rev. 1.0 July 2002 MS18R1622(4/8)DH0 (16Mx18)*2(4/8)pcs SO-RIMM™ based on 288Mb D-die, 32s banks,16K/32ms Refresh, 2.5V

MARKING CODE 11gb

Contextual Info: MR18R326GAG0 Preliminary Change History Version 0.1 September 2003 - Preliminary * First copy. * Based on the 1.0 ver. (July 2002) 256/288Mbit D-die RIMM Datasheet Page 0 Version 0.1 Sept. 2003 MR18R326GAG0 Preliminary (32Mx18)*16pcs RIMMTM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V

Contextual Info: MS18R1622 4/8 AH0 Revision History Version 1.0 (December 2001) - First copy. - Based on the 1.1 ver.(August 2001) 256/288Mbit A-die RIMM Module Datasheet. Version 1.1(July 2002) - Based on the 1.0 ver.(December 2001) 288Mbit A-die SO-RIMM Module Datasheet.

a80 marking code

Abstract: a64 marking code B58 608 diode 910 b34 MS18R1622EH0-CM8 MS18R1622EH0-CT9 MS18R1624EH0-CM8 MS18R1624EH0-CT9 MS18R1628EH0-CT9 MS18R1622EH0-CK8
Contextual Info: Preliminary MS18R1622 4/8 EH0 Revision History Version 0.1 (February 2004) - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMM Module Datasheet. Page 0 Rev. 0.1 Feb. 2004 Preliminary MS18R1622(4/8)EH0 (16Mx18)*2(4/8)pcs SO-RIMM™ based on 288Mb E-die, 32s banks,16K/32ms Refresh, 2.5V

Contextual Info: MS18R1622 4/8 EH0 Revision History Version 0.1 (February 2004) - Preliminary - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMM Module Datasheet. Version 1.0 (May 2004) - Eliminate "Preliminary" Page 0 Rev. 1.0 May 2004 MS18R1622(4/8)EH0

a80 marking code

Abstract: marking A32 marking code B38 samsung electronics logo MS18R1622DH0-CK8 MS18R1622DH0-CM8 MS18R1622DH0-CN9 MS18R1622DH0-CT9 MS18R1624DH0-CM8 MS18R1624DH0-CM9
Contextual Info: MS18R1622 4/8 DH0 Revision History Version 1.0 (July 2002) - Based on the 1.1 ver. (July 2002) 288Mbit A-die SO-RIMM Module Datasheet. Page 0 Rev. 1.0 July 2002 MS18R1622(4/8)DH0 (16Mx18)*2(4/8)pcs SO-RIMM™ based on 288Mb D-die, 32s banks,16K/32ms Refresh, 2.5V